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PMV160UP,215
Trans MOSFET P-CH 20V 1.2A 3-Pin SOT-23 T/R
PMV160UP,215
Trans MOSFET P-CH 20V 1.2A 3-Pin SOT-23 T/R
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Shipping & Payment
Shipping & Payment
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Service & Packaging
Service & Packaging
About After Sales Service
All Parts Extended Quality Guarantee
Initiate the application within 90 days from the shipment date.
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PMV160UP,215 DataSheet
Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!
Details
The PMV160UP is a P-channel MOSFET transistor designed for applications requiring a high continuous drain current and low on resistance. With a maximum drain-source voltage of -20V and a continuous drain current of -1.2A, this transistor is suitable for a variety of circuit designs. The on resistance (Rds(on) of 0.17ohm at a test voltage of -4.5V ensures efficient power management and low heat dissipation. The threshold voltage (Vgs) of -700mV allows for precise control of the transistor's switching behavior
Key Features
- High-quality components used
- Low standby power consumption
- Compliance with RoHS directive
Application
- Power supply
- Motor driver
- Solenoid driver
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
| Part Life Cycle Code | Active | Part Package Code | TO-236 |
| Pin Count ! | 3 | Reach Compliance Code | compliant |
| Configuration | SINGLE WITH BUILT-IN DIODE | DS Breakdown Voltage-Min | 20 V |
| Drain Current-Max (ID) | 1.2 A | Drain-source On Resistance-Max | 0.21 Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | Feedback Cap-Max (Crss) | 30 pF |
| JEDEC-95 Code | TO-236AB | JESD-30 Code | R-PDSO-G3 |
| JESD-609 Code | e3 | Moisture Sensitivity Level | 1 |
| Number of Elements | 1 | Number of Terminals | 3 |
| Operating Mode ! | ENHANCEMENT MODE | Operating Temperature-Max | 150 °C |
| Operating Temperature-Min | -55 °C | Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR | Package Style | SMALL OUTLINE |
| Peak Reflow Temperature (Cel) | 260 | Polarity/Channel Type | P-CHANNEL |
| Power Dissipation-Max (Abs) | 0.48 W | Reference Standard | IEC-60134 |
| Surface Mount ! | YES | Terminal Finish | TIN |
| Terminal Form ! | GULL WING | Terminal Position | DUAL |
| Time@Peak Reflow Temperature-Max (s) | 30 | Transistor Application | SWITCHING |
| Transistor Element Material | SILICON | Product Status | Active |
| FET Type | P-Channel | Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20 V | Current - Continuous Drain (Id) @ 25°C | 1.2A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V | Rds On (Max) @ Id, Vgs | 210mOhm @ 1.2A, 4.5V |
| Vgs(th) (Max) @ Id | 950mV @ 250µA | Gate Charge (Qg) (Max) @ Vgs | 4 nC @ 4.5 V |
| Vgs (Max) | ±8V | Input Capacitance (Ciss) (Max) @ Vds | 365 pF @ 10 V |
| Power Dissipation (Max) | 335mW (Ta), 2.17W (Tc) | Operating Temperature ! | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Supplier Device Package | TO-236AB |
| Package / Case | TO-236-3, SC-59, SOT-23-3 | Base Product Number | PMV160 |
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
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