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RD00HVS1
RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-3
RD00HVS1
RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-3
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Manufacturer Part # : RD00HVS1
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Package/Case: SOT-89
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Brand: MITSUBISHI
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Product Categories : Instrumentation, OP Amps, Buffer Amps
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We have successfully obtained various certification standards and have established our own professional testing laboratory. This ensures that every product we supply to our customers meets the highest quality standards. We adhere to strict testing protocols to maintain the consistency and accuracy of our products. To ensure that our products are original and genuine, we also collaborate with reputable third-party testing facilities to conduct rigorous quality testing. Our commitment to quality extends to meeting industry, legal, regulatory, and ISO 9001:2015 requirements.
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Service & Packaging
Service & Packaging
About After Sales Service
All Parts Extended Quality Guarantee
Initiate the application within 90 days from the shipment date.
Confirm the return or exchange with our staff.
Maintain the goods in their original condition as received.
Lastly, please note that the eligibility for return or exchange of goods is subject to an assessment of the actual condition of the returned items. We will evaluate the received goods before finalizing the return or exchange process. If you have any inquiries or require further assistance regarding returns or exchanges, please don't hesitate to contact us at [email protected]
About packaging
Regarding packaging, our products are carefully packed in anti-static bags to provide ESD anti-static protection. The outer packaging is durable with secure closure. We support various packaging methods such as Tape and Reel, Cut Tape, Tube, or Tray.
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RD00HVS1 DataSheet
Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!
Details
RD00HVS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications.FEATURES High power gain Pout>0.5W, Gp>20dB @Vdd=12.5V,f=175MHzAPPLICATION For output stage of high power amplifiers in VHF/UHF Band mobile radio sets.
Key Features
- High power gain
- Pout>0.5W, Gp>20dB @Vdd=12.5V,f=175MHz
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
| Part Life Cycle Code | Obsolete | Pin Count ! | 3 |
| Reach Compliance Code | ECCN Code | EAR99 | |
| Case Connection | SOURCE | Configuration | SINGLE |
| DS Breakdown Voltage-Min | 30 V | Drain Current-Max (ID) | 0.2 A |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | Highest Frequency Band | ULTRA HIGH FREQUENCY BAND |
| JESD-30 Code | R-PSSO-F3 | Number of Elements | 1 |
| Number of Terminals | 3 | Operating Mode ! | ENHANCEMENT MODE |
| Operating Temperature-Max | 150 °C | Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR | Package Style | SMALL OUTLINE |
| Polarity/Channel Type | N-CHANNEL | Power Dissipation-Max (Abs) | 0.8 W |
| Power Gain-Min (Gp) | 20 dB | Qualification Status ! | Not Qualified |
| Surface Mount ! | YES | Terminal Form ! | FLAT |
| Terminal Position | SINGLE | Transistor Application | AMPLIFIER |
| Transistor Element Material | SILICON |
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
FAQs
What is RD00HVS1?
The RD00HVS1 is a Silicon MOSFET RF power transistor designed for high-power amplification in the HF to 520 MHz range. It is manufactured by Mitsubishi Electric and is commonly used in radio frequency (RF) power amplifiers for amateur radio, industrial, and scientific applications.
How Does RD00HVS1 Work?
The RD00HVS1 works by utilizing its silicon MOSFET technology to amplify RF signals with high efficiency and linearity. It is typically used in push-pull or single-ended configurations to deliver high power output with good harmonic performance. The transistor is well-suited for applications requiring high-power RF amplification in various frequency bands.
How Many Pins does RD00HVS1 have and What are the Functions of the Pinout Configuration?
The RD00HVS1 is housed in a 6-pin flange package. The pinout configuration includes:
- G: Gate terminal for input signal.
- D: Drain terminal for power supply connection.
- S: Source terminal for ground connection.
- RFIN: Radio frequency input terminal.
- RFOUT: Radio frequency output terminal.
- VS: Voltage supply terminal.
What are the Pros and Cons of RD00HVS1?
Pros:
- High Power Output: Capable of delivering high RF power output in the HF to 520 MHz range.
- Efficiency: Provides high efficiency in RF power amplification, leading to reduced power consumption and heat generation.
- Reliability: Manufactured by Mitsubishi Electric, known for producing high-quality semiconductor components.
- Frequency Range: Covers a wide frequency range, making it versatile for different RF applications.
Cons:
- Complex Matching: May require careful impedance matching and tuning for optimal performance in specific applications.
- Heat Dissipation: High-power operation may require efficient heat dissipation measures.
- Cost: High-power RF transistors like the RD00HVS1 may have a higher cost compared to lower-power alternatives.
Are There Any Equivalents/Alternatives to RD00HVS1 for Recommendation?
- The BLF188XR from NXP Semiconductors is a similar high-power RF transistor suitable for HF to UHF amplification.
- Alternatives to the RD00HVS1 include the MRF300AN from Freescale Semiconductor and the MGFC47H2102 from M/A-COM Technology Solutions.
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