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RFP12P10
High-Power P-Channel MOSFET, 12A Drain Current, 100V Voltage Rating, 0.3ohm Resistance
RFP12P10
High-Power P-Channel MOSFET, 12A Drain Current, 100V Voltage Rating, 0.3ohm Resistance
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RFP12P10 DataSheet
Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!
Details
12A, 80V and 100V, 0.300 Ohm, P-Channel Power MOSFETsThe RFP12P08, and RFP12P10 are P-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.Features • 12A, 80V and 100V • rDS(ON)= 0.300Ω • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Majority Carrier Device • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”
Key Features
- 12A, 80V and 100V
- rDS(ON)= 0.300Ω
- SOA is Power Dissipation Limited
- Nanosecond Switching Speeds
- Linear Transfer Characteristics
- High Input Impedance
- Majority Carrier Device
- Related Literature
- - TB334 “Guidelines for Soldering Surface Mount
- Components to PC Boards”
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
| Product Category ! | MOSFET | RoHS | N |
| Technology | Si | Mounting Style | Through Hole |
| Package / Case | TO-220-3 | Transistor Polarity | P-Channel |
| Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 100 V |
| Id - Continuous Drain Current | 12 A | Rds On - Drain-Source Resistance | 300 mOhms |
| Vgs - Gate-Source Voltage | - 20 V, + 20 V | Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature ! | + 150 C | Pd - Power Dissipation | 75 W |
| Channel Mode | Enhancement | Brand | onsemi / Fairchild |
| Configuration | Single | Fall Time | 94 ns |
| Height | 16.3 mm | Length | 10.67 mm |
| Product Type ! | MOSFET | Rise Time ! | 90 ns |
| Subcategory | MOSFETs | Transistor Type | 1 P-Channel |
| Typical Turn-Off Delay Time | 144 ns | Typical Turn-On Delay Time | 18 ns |
| Width | 4.7 mm | Unit Weight | 0.068784 oz |
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
FAQs
What is RFP12P10?
The RFP12P10 is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-power switching applications. It is capable of handling high current and voltage levels, making it suitable for power supplies, motor control, and automotive systems.
How Does RFP12P10 Work?
The RFP12P10 operates as a voltage-controlled switch, allowing or blocking the flow of current based on the gate-to-source voltage. When a sufficient voltage is applied to the gate, the MOSFET conducts, enabling the flow of current through the device. This functionality makes it suitable for high-power switching applications.
How Many Pins does RFP12P10 have and What are the Functions of the Pinout Configuration?
The RFP12P10 is typically available in a TO-220 package, which includes the following pins:
- GATE: The gate pin used to control the switching of the MOSFET.
- DRAIN: The drain pin through which the main current flows when the MOSFET is conducting.
- SOURCE: The source pin connected to the ground or return path of the current.
What are the Pros and Cons of RFP12P10?
Pros:
- High Power Handling: Capable of handling high current and voltage levels for power applications.
- Low ON Resistance: Provides efficient conduction with low voltage drops when conducting.
- Robustness: Designed to withstand high-power switching stresses and transient conditions.
- Versatility: Suitable for a wide range of industrial, automotive, and power supply applications.
Cons:
- Gate Drive Consideration: Requires careful consideration of gate drive voltage and current for optimal performance.
- Heat Dissipation: May require heat sinks or thermal management in high-power applications to prevent overheating.
Are There Any Equivalents/Alternatives to RFP12P10 for Recommendation?
Equivalents and alternatives to the RFP12P10 include the IRF4905 from Infineon Technologies and the FQP30N06L from Fairchild Semiconductor.
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