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RS3E075ATTB
The RS3E075ATTB is a Silicon P-Channel Power Field-Effect Transistor with a current rating of 7
RS3E075ATTB
The RS3E075ATTB is a Silicon P-Channel Power Field-Effect Transistor with a current rating of 7
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Shipping & Payment
Shipping & Payment
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Service & Packaging
Service & Packaging
About After Sales Service
All Parts Extended Quality Guarantee
Initiate the application within 90 days from the shipment date.
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Regarding packaging, our products are carefully packed in anti-static bags to provide ESD anti-static protection. The outer packaging is durable with secure closure. We support various packaging methods such as Tape and Reel, Cut Tape, Tube, or Tray.
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RS3E075ATTB DataSheet
Pricing (USD)
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | $0.789 | $0.79 |
| 200 | $0.315 | $63.00 |
| 500 | $0.305 | $152.50 |
| 1000 | $0.300 | $300.00 |
These prices are subject to market fluctuations, and a quote submission is required to obtain the latest prices.
Details
The RS3E075ATTB is a P-channel MOSFET (metal-oxide-semiconductor field-effect transistor) with a voltage rating of 30 volts and a small-outline package (SOP) with 8 pins. MOSFETs are semiconductor devices commonly used in electronic circuits for switching and amplifying signals. P-channel MOSFETs are known for their ability to handle high currents and voltages with low power consumption. They are commonly used in applications where the control signal needs to be at a higher voltage than the power supply. The 8-pin SOP package is a surface-mount component that is compact and easy to integrate into circuit designs. This package type is suitable for applications where space is limited and high component density is required. The RS3E075ATTB MOSFET has a low on-resistance and fast switching speeds, making it ideal for use in power management circuits, battery protection circuits, and DC-DC converters. It can efficiently control power flow in systems where low power dissipation and high efficiency are essential.
Key Features
- Part number: RS3E075ATTB
- Manufactured by: Unknown
- Package: TO-220
- Voltage rating: 75V
- Current rating: Unknown
- Features: High voltage rectifier diode
- Applications: Power supply, inverters, converters
Application
- Power supplies
- Telecommunications
- Consumer electronics
- Automotive
- Industrial automation
- Medical devices
- Test and measurement equipment
- Battery management systems
- Solar energy systems
- LED lighting
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
| Rohs Code | Yes | Part Life Cycle Code | Active |
| Reach Compliance Code | compliant | ECCN Code | EAR99 |
| Factory Lead Time | 53 Weeks, 1 Day | Avalanche Energy Rating (Eas) | 4.2 mJ |
| Configuration | SINGLE WITH BUILT-IN DIODE | DS Breakdown Voltage-Min | 30 V |
| Drain Current-Max (ID) | 7.5 A | Drain-source On Resistance-Max | 0.031 Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | JESD-30 Code | R-PDSO-G8 |
| Moisture Sensitivity Level | 1 | Number of Elements | 1 |
| Number of Terminals | 8 | Operating Mode ! | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY | Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE | Peak Reflow Temperature (Cel) | 260 |
| Polarity/Channel Type | P-CHANNEL | Pulsed Drain Current-Max (IDM) | 30 A |
| Surface Mount ! | YES | Terminal Form ! | GULL WING |
| Terminal Position | DUAL | Time@Peak Reflow Temperature-Max (s) | 10 |
| Transistor Application | SWITCHING | Transistor Element Material | SILICON |
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
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