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SCT2160KE
Silicon Carbide power FET featuring N-channel design, TO-247 packaging, 22A drain current, 1200V voltage rating, and 0.208 ohm on-resistance
SCT2160KE
Silicon Carbide power FET featuring N-channel design, TO-247 packaging, 22A drain current, 1200V voltage rating, and 0.208 ohm on-resistance
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Manufacturer Part # : SCT2160KE
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Package/Case: TO-247
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Brand: rohm semiconductor
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Product Categories : Single FETs, MOSFETs
Quality Assurance
Quality Assurance
All parts procured from our supply chain network undergo a rigorous incoming inspection process. This meticulous inspection ensures that the parts received by our customers are authentic and meet the required standards. Additionally, we maintain detailed records of these inspections to ensure transparency and traceability throughout the supply chain.
Certification
We have successfully obtained various certification standards and have established our own professional testing laboratory. This ensures that every product we supply to our customers meets the highest quality standards. We adhere to strict testing protocols to maintain the consistency and accuracy of our products. To ensure that our products are original and genuine, we also collaborate with reputable third-party testing facilities to conduct rigorous quality testing. Our commitment to quality extends to meeting industry, legal, regulatory, and ISO 9001:2015 requirements.
Shipping & Payment
Shipping & Payment
About Shipping
We generally ship orders within a few business days through reliable shipping carriers such as FedEx, SF, UPS, or DHL. We also have support for other shipping methods. If you would like to inquire about specific shipping details or costs, please don't hesitate to reach out to us.
About Payment
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If you have a specific payment method in mind or would like to inquire about rates and other details, please feel free to contact us.
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Service & Packaging
Service & Packaging
About After Sales Service
All Parts Extended Quality Guarantee
Initiate the application within 90 days from the shipment date.
Confirm the return or exchange with our staff.
Maintain the goods in their original condition as received.
Lastly, please note that the eligibility for return or exchange of goods is subject to an assessment of the actual condition of the returned items. We will evaluate the received goods before finalizing the return or exchange process. If you have any inquiries or require further assistance regarding returns or exchanges, please don't hesitate to contact us at [email protected]
About packaging
Regarding packaging, our products are carefully packed in anti-static bags to provide ESD anti-static protection. The outer packaging is durable with secure closure. We support various packaging methods such as Tape and Reel, Cut Tape, Tube, or Tray.
Example
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Cut Tape
Tube or Tray
SCT2160KE DataSheet
Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!
Details
The SCT2160KE is a silicon N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) designed for high-voltage applications. It features a drain-source voltage of 800V, a continuous drain current of 1.4A, and a low on-resistance of 3.8 ohms. This MOSFET is housed in a TO-220F package, which provides good thermal conductivity and allows for easy mounting on a heatsink. It has a gate threshold voltage of 2-4V and a gate-source voltage of ±20V. The SCT2160KE is ideal for use in applications such as power supplies, motor control, and lighting. Its high voltage and current ratings make it suitable for switching circuits that require efficiency and reliability. This MOSFET is designed to operate in a wide temperature range, from -55°C to 150°C, making it suitable for use in various environmental conditions. It also has low gate charge and input capacitance, ensuring fast switching speeds and reduced power losses.
Key Features
- 600V, 16A N-Channel Power MOSFET
- Low on-resistance RDS(on) of 0.18 Ohms
- High input impedance
- High-power dissipation capability
- Low gate charge
- Gate-source voltage of ±20V
- TO-220F package
- Designed for high-speed switching applications
Application
- Power supplies
- Motor control systems
- Industrial inverters
- Robotics
- Renewable energy systems
- Uninterruptible power supplies (UPS)
- Electric vehicles (EVs) and hybrid electric vehicles (HEVs)
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
| Product Category ! | MOSFET | Technology | SiC |
| Mounting Style | Through Hole | Package / Case | TO-247 |
| Transistor Polarity | N-Channel | Number of Channels | 1 Channel |
| Vds - Drain-Source Breakdown Voltage | 1.2 kV | Id - Continuous Drain Current | 22 A |
| Rds On - Drain-Source Resistance | 160 mOhms | Vgs - Gate-Source Voltage | - 6 V, + 22 V |
| Vgs th - Gate-Source Threshold Voltage | 1.6 V | Qg - Gate Charge | 62 nC |
| Minimum Operating Temperature | - 55 C | Maximum Operating Temperature ! | + 175 C |
| Pd - Power Dissipation | 165 W | Channel Mode | Enhancement |
| Brand | ROHM Semiconductor | Configuration | Single |
| Fall Time | 27 ns | Forward Transconductance - Min | 2.4 S |
| Product Type ! | MOSFET | Rise Time ! | 25 ns |
| Subcategory | MOSFETs | Transistor Type | 1 N-Channel |
| Typical Turn-Off Delay Time | 67 ns | Typical Turn-On Delay Time | 23 ns |
| Part # Aliases | SCT2160KEC | Unit Weight | 0.211644 oz |
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