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SCT3030ALGC11
Silicon carbide N-Channel MOSFET featuring 650V voltage rating, 70A current handling and TrenchMOS technology for optimized performance
SCT3030ALGC11
Silicon carbide N-Channel MOSFET featuring 650V voltage rating, 70A current handling and TrenchMOS technology for optimized performance
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Manufacturer Part # : SCT3030ALGC11
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Package/Case: TO247-3
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Brand: Rohm Semiconductor
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Product Categories : Single FETs, MOSFETs
Quality Assurance
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We have successfully obtained various certification standards and have established our own professional testing laboratory. This ensures that every product we supply to our customers meets the highest quality standards. We adhere to strict testing protocols to maintain the consistency and accuracy of our products. To ensure that our products are original and genuine, we also collaborate with reputable third-party testing facilities to conduct rigorous quality testing. Our commitment to quality extends to meeting industry, legal, regulatory, and ISO 9001:2015 requirements.
Shipping & Payment
Shipping & Payment
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Service & Packaging
Service & Packaging
About After Sales Service
All Parts Extended Quality Guarantee
Initiate the application within 90 days from the shipment date.
Confirm the return or exchange with our staff.
Maintain the goods in their original condition as received.
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SCT3030ALGC11 DataSheet
Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!
Details
SCT3030ALGC11 is a Silicon Carbide Field-Effect Transistor (SICFET) with an N-channel configuration, capable of handling voltage levels of up to 650V and currents up to 70A. The component is packaged in a TO-247N package, which is a widely used form factor for power semiconductors. The use of silicon carbide (SiC) in the SCT3030ALGC11 provides several advantages over traditional silicon-based transistors, including higher efficiency, lower switching losses, and better thermal conductivity, which allows for improved performance in high-power applications. The high voltage and current ratings make it suitable for use in a variety of power electronics applications, such as motor drives, power supplies, and inverters. The SCT3030ALGC11 is designed for high power handling capabilities and high-speed switching, making it ideal for applications where efficiency and reliability are crucial. Its robust design ensures long-term performance in demanding environments.
Application
- Industrial automation
- Robotic systems
- Automotive applications
- Sensing and monitoring systems
- Control systems
- Medical devices
- Consumer electronics
- Smart home devices
- Agricultural equipment
- Power tools
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
| Product Category ! | MOSFET | REACH | Details |
| Technology | SiC | Mounting Style | Through Hole |
| Package / Case | TO-247-3 | Transistor Polarity | N-Channel |
| Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 650 V |
| Id - Continuous Drain Current | 70 A | Rds On - Drain-Source Resistance | 30 mOhms |
| Vgs - Gate-Source Voltage | - 4 V, + 22 V | Vgs th - Gate-Source Threshold Voltage | 2.7 V |
| Qg - Gate Charge | 104 nC | Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature ! | + 175 C | Pd - Power Dissipation | 262 W |
| Channel Mode | Enhancement | Series | SCT3x |
| Brand | ROHM Semiconductor | Configuration | Single |
| Fall Time | 27 ns | Forward Transconductance - Min | 9.4 S |
| Product Type ! | MOSFET | Rise Time ! | 41 ns |
| Factory Pack Quantity | 30 | Subcategory | MOSFETs |
| Transistor Type | 1 N-Channel | Typical Turn-Off Delay Time | 48 ns |
| Typical Turn-On Delay Time | 22 ns | Part # Aliases | SCT3030AL |
| Unit Weight | 0.211644 oz |
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
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