SGD02N120
Semiconductor Device - N-type IGBT Chip, 1200 Volts, Current Rating 6SGD02N120
Semiconductor Device - N-type IGBT Chip, 1200 Volts, Current Rating 6
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Manufacturer Part # : SGD02N120
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Package/Case: TO-252-3
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Part Status : OBSOLETE
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Brand: Infineon
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Product Categories : Single IGBTs
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RoHS:
Quality Assurance
Quality Assurance
All parts procured from our supply chain network undergo a rigorous incoming inspection process. This meticulous inspection ensures that the parts received by our customers are authentic and meet the required standards. Additionally, we maintain detailed records of these inspections to ensure transparency and traceability throughout the supply chain.
Certification
We have successfully obtained various certification standards and have established our own professional testing laboratory. This ensures that every product we supply to our customers meets the highest quality standards. We adhere to strict testing protocols to maintain the consistency and accuracy of our products. To ensure that our products are original and genuine, we also collaborate with reputable third-party testing facilities to conduct rigorous quality testing. Our commitment to quality extends to meeting industry, legal, regulatory, and ISO 9001:2015 requirements.
Shipping & Payment
Shipping & Payment
About Shipping
We generally ship orders within a few business days through reliable shipping carriers such as FedEx, SF, UPS, or DHL. We also have support for other shipping methods. If you would like to inquire about specific shipping details or costs, please don't hesitate to reach out to us.
About Payment
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If you have a specific payment method in mind or would like to inquire about rates and other details, please feel free to contact us.
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Service & Packaging
Service & Packaging
About After Sales Service
All Parts Extended Quality Guarantee
Initiate the application within 90 days from the shipment date.
Confirm the return or exchange with our staff.
Maintain the goods in their original condition as received.
Lastly, please note that the eligibility for return or exchange of goods is subject to an assessment of the actual condition of the returned items. We will evaluate the received goods before finalizing the return or exchange process. If you have any inquiries or require further assistance regarding returns or exchanges, please don't hesitate to contact us at [email protected]
About packaging
Regarding packaging, our products are carefully packed in anti-static bags to provide ESD anti-static protection. The outer packaging is durable with secure closure. We support various packaging methods such as Tape and Reel, Cut Tape, Tube, or Tray.
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SGD02N120 DataSheet
Pricing (USD)
Quantity | Unit Price | Ext. Price |
---|---|---|
1 | $2.085 | $2.08 |
200 | $0.806 | $161.20 |
500 | $0.779 | $389.50 |
1000 | $0.764 | $764.00 |
These prices are subject to market fluctuations, and a quote submission is required to obtain the latest prices.
Details
SGD02N120 is an Insulated Gate Bipolar Transistor (IGBT) with a NPT (Non-Punch Through) technology, designed for high power applications. It has a voltage rating of 1200 volts, a current rating of 6.2 amps, and a power dissipation of 62 watts. The component is surface mountable and comes in a PG-TO252-3-11 package, making it suitable for compact and efficient circuit designs. The SGD02N120 offers low conduction and switching losses, making it ideal for applications requiring high efficiency and reliability. Its NPT technology allows for better ruggedness and performance, especially in high power switching applications. With a voltage rating of 1200 volts, this IGBT can handle high voltage spikes and switching events without compromising its performance. The SGD02N120 is commonly used in motor control, power supplies, renewable energy systems, and industrial automation applications where high power handling and efficiency are crucial. Its compact surface mount package and high power ratings make it a versatile choice for various electronic designs.
Key Features
- Sophisticated power conversion
- Efficient energy transfer
- Small size and light weight
- Robust and reliable performance
- Fully RoHS compliant module
- Excellent thermal management
Application
- Energy efficient solutions
- Advanced power technology
- Reliable power solutions
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Status | Obsolete | IGBT Type | NPT |
Voltage - Collector Emitter Breakdown (Max) | 1200 V | Current - Collector (Ic) (Max) | 6.2 A |
Current - Collector Pulsed (Icm) | 9.6 A | Vce(on) (Max) @ Vge, Ic | 3.6V @ 15V, 2A |
Power - Max | 62 W | Switching Energy | 220µJ |
Input Type | Standard | Gate Charge ! | 11 nC |
Td (on/off) @ 25°C | 23ns/260ns | Test Condition | 800V, 2A, 91Ohm, 15V |
Operating Temperature ! | -55°C ~ 150°C (TJ) | Mounting Type | Surface Mount |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | Supplier Device Package | PG-TO252-3-11 |
Base Product Number | SGD02N |
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