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SH8MA3TB1
Transistor: N/P-MOSFET, unipolar, 30/-30V, 7/-6A, Idm: 18A, 2.8W
SH8MA3TB1
Transistor: N/P-MOSFET, unipolar, 30/-30V, 7/-6A, Idm: 18A, 2.8W
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Manufacturer Part # : SH8MA3TB1
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Package/Case: SOP8
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Brand: ROHM SEMICONDUCTOR
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Product Categories : FET, MOSFET Arrays
Quality Assurance
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Certification
We have successfully obtained various certification standards and have established our own professional testing laboratory. This ensures that every product we supply to our customers meets the highest quality standards. We adhere to strict testing protocols to maintain the consistency and accuracy of our products. To ensure that our products are original and genuine, we also collaborate with reputable third-party testing facilities to conduct rigorous quality testing. Our commitment to quality extends to meeting industry, legal, regulatory, and ISO 9001:2015 requirements.
Shipping & Payment
Shipping & Payment
About Shipping
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Service & Packaging
Service & Packaging
About After Sales Service
All Parts Extended Quality Guarantee
Initiate the application within 90 days from the shipment date.
Confirm the return or exchange with our staff.
Maintain the goods in their original condition as received.
Lastly, please note that the eligibility for return or exchange of goods is subject to an assessment of the actual condition of the returned items. We will evaluate the received goods before finalizing the return or exchange process. If you have any inquiries or require further assistance regarding returns or exchanges, please don't hesitate to contact us at [email protected]
About packaging
Regarding packaging, our products are carefully packed in anti-static bags to provide ESD anti-static protection. The outer packaging is durable with secure closure. We support various packaging methods such as Tape and Reel, Cut Tape, Tube, or Tray.
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SH8MA3TB1 DataSheet
Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!
Details
The SH8MA3TB1 is a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) component categorized as N/P-CH, indicating it can function as either an N-channel or P-channel MOSFET depending on the circuit configuration. Its specifications include a voltage rating of 30 volts and a maximum current handling capacity of 7A for the N-channel and 6A for the P-channel configuration. The 8SOP (8-Pin Small Outline Package) indicates the physical packaging of the component, which typically comprises eight pins arranged in a small outline, suitable for surface-mount applications. This packaging is commonly used in compact electronic devices where space is limited. MOSFETs are widely used in various electronic circuits for switching and amplification purposes due to their high efficiency, fast switching speeds, and low power consumption. The SH8MA3TB1 MOSFET is likely to find applications in power management circuits, voltage regulation, motor control, and other electronic systems where efficient power handling and precise control are essential. In summary, the SH8MA3TB1 MOSFET is a versatile electronic component with a voltage rating of 30V and current handling capacities of 7A (N-channel) and 6A (P-channel), packaged in an 8-pin SOP package, suitable for a range of applications requiring efficient power handling and control
Key Features
- Low on - resistance.
- Small Surface Mount Package (SOP8).
- Pb-free lead plating; RoHS compliant.
- Halogen Free.
Application
- Military and defense systems
- Remote sensing applications
- Agriculture and forestry management
- Environmental monitoring
- Infrastructure monitoring
- Disaster management and response
- Surveillance and security systems
- Autonomous vehicles and drones
- Mapping and cartography
- Industrial inspection and maintenance
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
| Rohs Code | Yes | Part Life Cycle Code | Active |
| Reach Compliance Code | compliant | ECCN Code | EAR99 |
| Factory Lead Time | 52 Weeks | Date Of Intro | 2017-11-10 |
| Avalanche Energy Rating (Eas) | 1.7 mJ | Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 30 V | Drain-source On Resistance-Max | 0.057 Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | JESD-30 Code | R-PDSO-G8 |
| Number of Elements | 2 | Number of Terminals | 8 |
| Operating Mode ! | ENHANCEMENT MODE | Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR | Package Style | SMALL OUTLINE |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | Polarity/Channel Type | N-CHANNEL AND P-CHANNEL |
| Pulsed Drain Current-Max (IDM) | 18 A | Surface Mount ! | YES |
| Terminal Form ! | GULL WING | Terminal Position | DUAL |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
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