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Si3865DDV
The SI3865DDV is a power management chip designed for efficient voltage regulation in electronic devicesSi3865DDV
The SI3865DDV is a power management chip designed for efficient voltage regulation in electronic devices
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Si3865DDV DataSheet
Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!
Details
The SI3865DDV is a P-channel MOSFET (metal-oxide-semiconductor field-effect transistor) designed for power management applications. It operates with a voltage range of -20V to -4V and a continuous drain current of -6.5A. The transistor has a low on-resistance of 63 milliohms maximum, ensuring minimal power loss during operation. Its compact package and low-profile design make it suitable for space-constrained applications. The SI3865DDV features a fast switching speed, enabling efficient power conversion in various circuits. Additionally, it has built-in protection features such as over-temperature and over-current protection, enhancing system reliability. This MOSFET is commonly used in battery management, load switching, and DC-DC converter applications where efficient power control is essential.
Key Features
- Low On-Resistance: 2.45 Ω (typical)
- Low Input Capacitance: 78 pF (typical)
- Fast Switching Speed: 16 ns (typical)
- Low Gate Charge: 36 nC (typical)
- High Peak Pulse Current Capability: 61 A
- ESD Protection: >2000 V (Human Body Model)
Application
- Power management systems
- Battery charging circuits
- Portable electronic devices
- Solar power systems
- DC-DC converters
- Automotive electronics
- Industrial automation systems
- LED lighting systems
- Telecommunications equipment
- Computer peripherals
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
| Part Life Cycle Code | Active | Reach Compliance Code | |
| HTS Code ! | 8542.39.00.01 | Adjustable Threshold | NO |
| Analog IC - Other Type | POWER SUPPLY SUPPORT CIRCUIT | JESD-30 Code | R-PDSO-G6 |
| Length | 3.05 mm | Number of Channels | 1 |
| Number of Functions | 1 | Number of Terminals | 6 |
| Operating Temperature-Max | 150 °C | Operating Temperature-Min | -55 °C |
| Package Body Material | PLASTIC/EPOXY | Package Code | TSOP |
| Package Equivalence Code | TSOP6,.11,37 | Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE, THIN PROFILE | Seated Height-Max | 1.1 mm |
| Supply Voltage-Max (Vsup) | 12 V | Supply Voltage-Min (Vsup) | 1.5 V |
| Supply Voltage-Nom (Vsup) | 1.8 V | Surface Mount ! | YES |
| Terminal Form ! | GULL WING | Terminal Pitch ! | 0.95 mm |
| Terminal Position | DUAL | Width | 1.65 mm |
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
FAQs
What is Si3865DDV?
The Si3865DDV is a P-channel enhancement mode field-effect transistor (FET) designed by Vishay Siliconix. It is commonly used for power management applications where high efficiency and low power consumption are essential.
How Does Si3865DDV Work?
The Si3865DDV operates as a switch in electronic circuits, controlling the flow of current based on the voltage applied to its gate terminal. As a P-channel FET, it conducts current when a negative voltage is applied to the gate, making it suitable for use in low-side switch configurations.
How Many Pins does Si3865DDV have and What are the Functions of the Pinout Configuration?
The Si3865DDV is housed in a 8-pin SOIC (Small Outline Integrated Circuit) package. The pinout configuration includes:
- GATE: Gate pin for controlling the FET.
- SOURCE: Source pin for the FET to connect to ground.
- DRAIN: Drain pin for the FET to connect to the load.
- BODY: Body diode connection for certain applications.
- NC (Not Connected): Pin that is not internally connected and can be left unconnected.
What are the Pros and Cons of Si3865DDV?
Pros:
- Low On-Resistance: Offers low resistance when conducting, leading to lower power dissipation.
- Enhancement Mode: Can be easily driven by negative gate voltage, simplifying circuit design.
- High Efficiency: Provides efficient power management in various applications.
- Compact Package: The 8-pin SOIC package is space-efficient for board designs.
Cons:
- Negative Gate Voltage: Requires a negative voltage drive which may not be compatible with all systems.
- Heat Dissipation: May require heatsinking in high-power applications to manage thermal issues.
Are There Any Equivalents/Alternatives to Si3865DDV for Recommendation?
- The Si4966DY from Vishay Siliconix is a similar P-channel FET with comparable specifications.
- Alternatives to the Si3865DDV include the NDP6020P from ON Semiconductor and the FDS4435A from Fairchild Semiconductor.
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