SIHG47N60S-E3

Name: SIHG47N60S-E3
Rating: 4.5 (10 reviews)

Trans MOSFET N-channel with a voltage rating of 600V and a current rating of 47A in a TO-247AC package

6,854 Effective Inventory

SIHG47N60S-E3

Effective Inventory6,854

Trans MOSFET N-channel with a voltage rating of 600V and a current rating of 47A in a TO-247AC package

Manufacturer Part # : SIHG47N60S-E3
Package/Case: TO-247AC
Part Status : OBSOLETE
Brand: Vishay
Product Categories : Single FETs, MOSFETs
RoHS:

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SIHG47N60S-E3 DataSheet

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Details

The SIHG47N60S-E3 is a silicon carbide (SiC) MOSFET power transistor from Infineon Technologies. It is designed for high power switching applications in industrial and automotive environments. With a drain-source voltage rating of 600V and a continuous drain current of 47A, the SIHG47N60S-E3 is capable of handling high power loads efficiently. It has a low on-state resistance of 70mOhm, which allows for reduced power losses and improved thermal performance. The transistor is housed in a TO-247-3 package, which provides good thermal conduction properties for effective heat dissipation. This helps to maintain stable performance and reliability even under high-temperature operating conditions. The SIHG47N60S-E3 features a fast switching speed, with a typical turn-on time of 23ns and a turn-off time of 22ns. This allows for efficient power conversion and control in applications such as motor drives, power supplies, and inverters.

Key Features

600V, 47A IGBT
NPT technology
Low VCE(sat) for higher efficiency
Soft switching for reduced EMI
High ruggedness, reliable operation
Positive temperature coefficient
Low tail current
Integrated gate resistor
RoHS compliant

Application

Power supplies
Motor control
Renewable energy systems
Electric vehicles
Industrial equipment
Electric welding systems
Uninterruptible power supplies (UPS)
Server power supplies
LED lighting
Solar inverters

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

ECCN (US)	EAR99	Part Status !	Obsolete
Automotive	No	PPAP	No
Category	Power MOSFET	Configuration	Single
Channel Mode	Enhancement	Channel Type	N
Number of Elements per Chip	1	Maximum Drain Source Voltage (V)	600
Maximum Gate Source Voltage (V)	±20	Maximum Gate Threshold Voltage (V)	4
Maximum Continuous Drain Current (A)	47	Maximum Gate Source Leakage Current (nA)	100
Maximum IDSS (uA)	1	Maximum Drain Source Resistance (mOhm)	70@10V
Typical Gate Charge @ Vgs (nC)	180@10V	Typical Gate Charge @ 10V (nC)	180
Typical Input Capacitance @ Vds (pF)	6630@100V	Maximum Power Dissipation (mW)	417000
Typical Fall Time (ns)	9	Typical Rise Time (ns)	12
Typical Turn-Off Delay Time (ns)	115	Typical Turn-On Delay Time (ns)	30
Minimum Operating Temperature (°C)	-55	Maximum Operating Temperature (°C)	150
Mounting	Through Hole	Package Height	20.7(Max)
Package Width	5.31(Max)	Package Length	15.87(Max)
PCB changed	3	Tab	Tab
Standard Package Name	TO-247	Supplier Package	TO-247AC
Pin Count !	3	Lead Shape	Through Hole