SKIIP13NAB065V1
Insulated Gate Bipolar Transistor with 24A I(C) and 600V V(BR)CES, N-Channel, MINISKIIP 1, 24 PINSKIIP13NAB065V1
Insulated Gate Bipolar Transistor with 24A I(C) and 600V V(BR)CES, N-Channel, MINISKIIP 1, 24 PIN
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Quality Assurance
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We have successfully obtained various certification standards and have established our own professional testing laboratory. This ensures that every product we supply to our customers meets the highest quality standards. We adhere to strict testing protocols to maintain the consistency and accuracy of our products. To ensure that our products are original and genuine, we also collaborate with reputable third-party testing facilities to conduct rigorous quality testing. Our commitment to quality extends to meeting industry, legal, regulatory, and ISO 9001:2015 requirements.
Shipping & Payment
Shipping & Payment
About Shipping
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Service & Packaging
Service & Packaging
About After Sales Service
All Parts Extended Quality Guarantee
Initiate the application within 90 days from the shipment date.
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Maintain the goods in their original condition as received.
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About packaging
Regarding packaging, our products are carefully packed in anti-static bags to provide ESD anti-static protection. The outer packaging is durable with secure closure. We support various packaging methods such as Tape and Reel, Cut Tape, Tube, or Tray.
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SKIIP13NAB065V1 DataSheet
Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!
Details
The SKIIP13NAB065V1 is a power module designed for use in various industrial applications that require high power and efficiency. This module is equipped with six insulated gate bipolar transistors (IGBTs) and six diodes, allowing for high-performance power control. It has a maximum continuous collector current of 130A and a maximum collector-emitter voltage of 650V, making it suitable for applications that require a high-power output.The SKIIP13NAB065V1 has a compact and rugged design, making it suitable for harsh operating environments. It also features built-in temperature and current sensors for efficient monitoring and protection of the module.Additionally, this power module offers advanced protection features such as overcurrent and overtemperature protection, ensuring the safety and reliability of the system it is being used in. The module also has a low inductance power terminal layout, reducing the overall system losses and improving efficiency.
Key Features
- SCR/ Diode module
- Voltage: 650V
- Current: 180A
- Integrated gate driver
- Overtemperature and overcurrent protection
- Low inductance design
- RoHS compliant
- Easy paralleling capability
- High power density
- Suitable for motor control applications
Application
- Industrial motor drives
- Wind turbines
- Solar inverters
- Power supplies
- Electric vehicles
- Railway applications
- Power converters
- UPS systems
- Renewable energy systems
- Automation systems
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Pbfree Code | Yes | Rohs Code | Yes |
Part Life Cycle Code | Obsolete | Pin Count ! | 24 |
Reach Compliance Code | compliant | ECCN Code | EAR99 |
Case Connection | ISOLATED | Collector Current-Max (IC) | 24 A |
Collector-Emitter Voltage-Max | 600 V | Configuration | COMPLEX |
Gate-Emitter Voltage-Max | 20 V | JESD-30 Code | R-XUFM-X24 |
JESD-609 Code | e3/e4 | Number of Elements | 7 |
Number of Terminals | 24 | Operating Temperature-Max | 150 °C |
Package Body Material | UNSPECIFIED | Package Shape | RECTANGULAR |
Package Style | FLANGE MOUNT | Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Polarity/Channel Type | N-CHANNEL | Qualification Status ! | Not Qualified |
Reference Standard | UL RECOGNIZED | Surface Mount ! | NO |
Terminal Finish | TIN/SILVER | Terminal Form ! | UNSPECIFIED |
Terminal Position | UPPER | Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Transistor Application | POWER CONTROL | Transistor Element Material | SILICON |
Turn-off Time-Nom (toff) | 205 ns | Turn-on Time-Nom (ton) | 50 ns |
VCEsat-Max | 2.5 V |
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
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