SQD19P06-60L-GE3

Effective Inventory5,091

Power Field-Effect Transistor, 20A I(D), 60V, 0.055ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

  • Manufacturer Part # : SQD19P06-60L-GE3

  • Package/Case: TO252-2

  • Brand: Siliconix

  • Product Categories : Single FETs, MOSFETs

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Certification

We have successfully obtained various certification standards and have established our own professional testing laboratory. This ensures that every product we supply to our customers meets the highest quality standards. We adhere to strict testing protocols to maintain the consistency and accuracy of our products. To ensure that our products are original and genuine, we also collaborate with reputable third-party testing facilities to conduct rigorous quality testing. Our commitment to quality extends to meeting industry, legal, regulatory, and ISO 9001:2015 requirements.

Shipping & Payment

Shipping & Payment

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Service & Packaging

Service & Packaging

About After Sales Service

All Parts Extended Quality Guarantee

Initiate the application within 90 days from the shipment date.

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SQD19P06-60L-GE3 DataSheet

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Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!

Rapid Quote

Please submit RFQ for SQD19P06-60L-GE3 or email to us: Email: [email protected], we will contact you in 12 hours.

Details

The SQD19P06-60L_GE3 is a versatile and reliable solution for engineers seeking a high-quality P-Channel MOSFET with superior performance characteristics. Its robust construction and advanced technology make it suitable for a wide range of industrial and consumer electronics applications

Key Features

  • Dual Function
  • Low Noise Emission
  • Achieve High Efficiency

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category ! MOSFET RoHS Details
Technology Si Qualification AEC-Q101
Tradename TrenchFET Series SQ
Brand Vishay / Siliconix Product Type ! MOSFET
Factory Pack Quantity 2000 Subcategory MOSFETs
Unit Weight 0.050717 oz

FAQs

What is SQD19P06-60L-GE3?

The SQD19P06-60L-GE3 is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed by Vishay Siliconix. It is a P-channel enhancement mode MOSFET that is suitable for high-efficiency power management applications such as switch mode power supplies, battery management, and load switching.

How Does SQD19P06-60L-GE3 Work?

The SQD19P06-60L-GE3 works by controlling the flow of current between the source and drain terminals based on the voltage applied to the gate terminal. As a P-channel MOSFET, it conducts when a negative voltage is applied to the gate, allowing for efficient power control and switching.

How Many Pins does SQD19P06-60L-GE3 have and What are the Functions of the Pinout Configuration?

The SQD19P06-60L-GE3 is housed in a D²PAK (TO-263) package. The pinout configuration includes:

  • GATE: Gate control terminal for turning the MOSFET on and off.
  • DRAIN: Terminal for the power flow from the MOSFET.
  • SOURCE: Terminal for the return path of the power flow.

What are the Pros and Cons of SQD19P06-60L-GE3?

Pros:

  • Low On-Resistance: Provides efficient power management with low conduction losses.
  • High Current Handling: Capable of handling relatively high currents for power applications.
  • Enhancement Mode: Allows for easy control of power flow with standard voltage levels.
  • D²PAK Package: Offers good thermal performance and ease of mounting on the PCB.

Cons:

  • Negative Gate Drive: Requires a negative voltage at the gate for conduction, which may need level shifting in some circuits.
  • Heat Dissipation: High power dissipation may require careful thermal management in high-current applications.

Are There Any Equivalents/Alternatives to SQD19P06-60L-GE3 for Recommendation?

Alternative P-channel MOSFETs to the SQD19P06-60L-GE3 include the SUP75P03 from Vishay Siliconix and the IRF4905PbF from Infineon Technologies.

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