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SSP45N20A
High power N-Channel MOSFET with low on-state resistance of 0.065ohm
SSP45N20A
High power N-Channel MOSFET with low on-state resistance of 0.065ohm
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Manufacturer Part # : SSP45N20A
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Package/Case: TO220-3
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Brand: Fairchild Semiconductor
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Product Categories : Single FETs, MOSFETs
Quality Assurance
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Shipping & Payment
Shipping & Payment
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Service & Packaging
Service & Packaging
About After Sales Service
All Parts Extended Quality Guarantee
Initiate the application within 90 days from the shipment date.
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SSP45N20A DataSheet
Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!
Details
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supply and motor control.Features• 35A, 200V, RDS(on) = 0.065Ω @VGS = 10 V• Low gate charge ( typical 133 nC)• Low Crss ( typical 120 pF)• Fast switching• 100% avalanche tested• Improved dv/dt capability
Key Features
- 35A, 200V, RDS(on) = 0.065Ω @VGS = 10 V Low gate charge ( typical 133 nC) Low Crss ( typical 120 pF) Fast switching 100% avalanche tested Improved dv/dt capability
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
| Package | Bulk | Product Status | Obsolete |
| FET Type | N-Channel | Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 200 V | Current - Continuous Drain (Id) @ 25°C | 35A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | Rds On (Max) @ Id, Vgs | 65mOhm @ 17.5A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA | Gate Charge (Qg) (Max) @ Vgs | 152 nC @ 10 V |
| Vgs (Max) | ±30V | Input Capacitance (Ciss) (Max) @ Vds | 3940 pF @ 25 V |
| Power Dissipation (Max) | 175W (Tc) | Operating Temperature ! | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole | Supplier Device Package | TO-220-3 |
| Package / Case | TO-220-3 |
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