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STB21NM60N
This TO-263AB (D2PAK-3) package MOSFET
STB21NM60N
This TO-263AB (D2PAK-3) package MOSFET
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Manufacturer Part # : STB21NM60N
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Package/Case: TO263-3
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Brand: Stmicroelectronics
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Product Categories : Single FETs, MOSFETs
Quality Assurance
Quality Assurance
All parts procured from our supply chain network undergo a rigorous incoming inspection process. This meticulous inspection ensures that the parts received by our customers are authentic and meet the required standards. Additionally, we maintain detailed records of these inspections to ensure transparency and traceability throughout the supply chain.
Certification
We have successfully obtained various certification standards and have established our own professional testing laboratory. This ensures that every product we supply to our customers meets the highest quality standards. We adhere to strict testing protocols to maintain the consistency and accuracy of our products. To ensure that our products are original and genuine, we also collaborate with reputable third-party testing facilities to conduct rigorous quality testing. Our commitment to quality extends to meeting industry, legal, regulatory, and ISO 9001:2015 requirements.
Shipping & Payment
Shipping & Payment
About Shipping
We generally ship orders within a few business days through reliable shipping carriers such as FedEx, SF, UPS, or DHL. We also have support for other shipping methods. If you would like to inquire about specific shipping details or costs, please don't hesitate to reach out to us.
About Payment
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If you have a specific payment method in mind or would like to inquire about rates and other details, please feel free to contact us.
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Service & Packaging
Service & Packaging
About After Sales Service
All Parts Extended Quality Guarantee
Initiate the application within 90 days from the shipment date.
Confirm the return or exchange with our staff.
Maintain the goods in their original condition as received.
Lastly, please note that the eligibility for return or exchange of goods is subject to an assessment of the actual condition of the returned items. We will evaluate the received goods before finalizing the return or exchange process. If you have any inquiries or require further assistance regarding returns or exchanges, please don't hesitate to contact us at [email protected]
About packaging
Regarding packaging, our products are carefully packed in anti-static bags to provide ESD anti-static protection. The outer packaging is durable with secure closure. We support various packaging methods such as Tape and Reel, Cut Tape, Tube, or Tray.
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STB21NM60N DataSheet
Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!
Details
The FDmesh™ II series belongs to the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the companys strip layout and associates all advantages of reduced onresistance and fast switching with an intrinsic fastrecovery body diode. It is therefore strongly recommended for bridge topologies, in ZVS phase-shift converters.Features■ The worldwide best RDS(on)*area amongst the fast recovery diode devices■ 100% avalanche tested■ Low input capacitance and gate charge■ Low gate input resistance■ Extremely high dv/dt and avalanche capabilitiesApplication■ Switching applications
Key Features
- The worldwide best RDS(on)area amongst the fast recovery diode devices
- 100% avalanche tested
- Low input capacitance and gate charge
- Low gate input resistance
- Extremely high dv/dt and avalanche capabilities
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
| Product Category ! | MOSFET | RoHS | Details |
| Technology | Si | Mounting Style | SMD/SMT |
| Package / Case | TO-263-3 | Transistor Polarity | N-Channel |
| Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 600 V |
| Id - Continuous Drain Current | 17 A | Rds On - Drain-Source Resistance | 190 mOhms |
| Vgs - Gate-Source Voltage | - 25 V, + 25 V | Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature ! | + 150 C | Pd - Power Dissipation | 140 W |
| Channel Mode | Enhancement | Series | STW21NM60N |
| Brand | STMicroelectronics | Configuration | Single |
| Fall Time | 31 ns | Forward Transconductance - Min | 12 S |
| Height | 4.6 mm | Length | 10.4 mm |
| Product Type ! | MOSFET | Rise Time ! | 15 ns |
| Factory Pack Quantity | 1000 | Subcategory | MOSFETs |
| Transistor Type | 1 N-Channel | Type | Power MOSFET |
| Typical Turn-Off Delay Time | 84 ns | Typical Turn-On Delay Time | 22 ns |
| Width | 9.35 mm | Unit Weight | 0.139332 oz |
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
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