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STD7NM80-1
N-channel 800 V, 0.95 Ohm, 6.5 A MDmesh(TM) Power MOSFET in IPAK package
STD7NM80-1
N-channel 800 V, 0.95 Ohm, 6.5 A MDmesh(TM) Power MOSFET in IPAK package
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Manufacturer Part # : STD7NM80-1
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Package/Case: TO-251-3
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Part Status : Obsolete
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Brand: STMicroelectronics
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Product Categories : Single FETs, MOSFETs
Quality Assurance
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We have successfully obtained various certification standards and have established our own professional testing laboratory. This ensures that every product we supply to our customers meets the highest quality standards. We adhere to strict testing protocols to maintain the consistency and accuracy of our products. To ensure that our products are original and genuine, we also collaborate with reputable third-party testing facilities to conduct rigorous quality testing. Our commitment to quality extends to meeting industry, legal, regulatory, and ISO 9001:2015 requirements.
Shipping & Payment
Shipping & Payment
About Shipping
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Service & Packaging
Service & Packaging
About After Sales Service
All Parts Extended Quality Guarantee
Initiate the application within 90 days from the shipment date.
Confirm the return or exchange with our staff.
Maintain the goods in their original condition as received.
Lastly, please note that the eligibility for return or exchange of goods is subject to an assessment of the actual condition of the returned items. We will evaluate the received goods before finalizing the return or exchange process. If you have any inquiries or require further assistance regarding returns or exchanges, please don't hesitate to contact us at [email protected]
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Regarding packaging, our products are carefully packed in anti-static bags to provide ESD anti-static protection. The outer packaging is durable with secure closure. We support various packaging methods such as Tape and Reel, Cut Tape, Tube, or Tray.
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STD7NM80-1 DataSheet
Pricing (USD)
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | $2.028 | $2.03 |
| 200 | $0.785 | $157.00 |
| 500 | $0.757 | $378.50 |
| 1000 | $0.745 | $745.00 |
These prices are subject to market fluctuations, and a quote submission is required to obtain the latest prices.
Details
MDmesh™ technology applies the benefits of the multiple drain process to STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product offers low on-resistance, high dv/dt capability and excellent avalanche characteristics.Features■ 100% avalanche tested■ Low input capacitance and gate charge■ Low gate input resistanceApplication■ Switching applications
Key Features
- 100% avalanche tested
- Low input capacitance and gate charge
- Low gate input resistance
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
| Rohs Code | Yes | Part Life Cycle Code | Obsolete |
| Part Package Code | TO-251 | Pin Count ! | 3 |
| Reach Compliance Code | not_compliant | ECCN Code | EAR99 |
| Avalanche Energy Rating (Eas) | 240 mJ | Case Connection | ISOLATED |
| Configuration | SINGLE WITH BUILT-IN DIODE | DS Breakdown Voltage-Min | 800 V |
| Drain Current-Max (Abs) (ID) | 6.5 A | Drain Current-Max (ID) | 6.5 A |
| Drain-source On Resistance-Max | 1.05 Ω | FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 Code | TO-251 | JESD-30 Code | R-PSIP-T3 |
| JESD-609 Code | e3 | Moisture Sensitivity Level | 1 |
| Number of Elements | 1 | Number of Terminals | 3 |
| Operating Mode ! | ENHANCEMENT MODE | Operating Temperature-Max | 150 °C |
| Package Body Material | PLASTIC/EPOXY | Package Shape | RECTANGULAR |
| Package Style | IN-LINE | Peak Reflow Temperature (Cel) | 260 |
| Polarity/Channel Type | N-CHANNEL | Power Dissipation-Max (Abs) | 90 W |
| Pulsed Drain Current-Max (IDM) | 26 A | Qualification Status ! | Not Qualified |
| Surface Mount ! | NO | Terminal Finish | Matte Tin (Sn) - annealed |
| Terminal Form ! | THROUGH-HOLE | Terminal Position | SINGLE |
| Time@Peak Reflow Temperature-Max (s) | 30 | Transistor Application | SWITCHING |
| Transistor Element Material | SILICON | Manufacturer | STMicroelectronics |
| Product Category ! | MOSFET | RoHS | Details |
| Technology | Si | Mounting Style | Through Hole |
| Package / Case | TO-251-3 | Transistor Polarity | N-Channel |
| Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 800 V |
| Id - Continuous Drain Current | 6.5 A | Rds On - Drain-Source Resistance | 1.05 Ohms |
| Vgs - Gate-Source Voltage | - 30 V, + 30 V | Qg - Gate Charge | 18 nC |
| Minimum Operating Temperature | - 55 C | Maximum Operating Temperature ! | + 150 C |
| Pd - Power Dissipation | 90 W | Channel Mode | Enhancement |
| Tradename | MDmesh | Series | STD7NM80-1 |
| Brand | STMicroelectronics | Fall Time | 10 ns |
| Height | 6.2 mm | Length | 6.6 mm |
| Product Type ! | MOSFET | Rise Time ! | 8 ns |
| Factory Pack Quantity | 3000 | Subcategory | MOSFETs |
| Transistor Type | 1 N-Channel | Typical Turn-Off Delay Time | 35 ns |
| Typical Turn-On Delay Time | 20 ns | Width | 2.4 mm |
| Unit Weight | 0.011993 oz |
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
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