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TBC847B,LM
Epitaxial NPN Bipolar Transistors suitable for up to 50V and .15A, in SOT23-3 Package
TBC847B,LM
Epitaxial NPN Bipolar Transistors suitable for up to 50V and .15A, in SOT23-3 Package
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Manufacturer Part # : TBC847B,LM
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Package/Case: SOT23-3
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Part Status : Active
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Product Categories : Single Bipolar Transistors
Quality Assurance
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Shipping & Payment
Shipping & Payment
About Shipping
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Service & Packaging
Service & Packaging
About After Sales Service
All Parts Extended Quality Guarantee
Initiate the application within 90 days from the shipment date.
Confirm the return or exchange with our staff.
Maintain the goods in their original condition as received.
Lastly, please note that the eligibility for return or exchange of goods is subject to an assessment of the actual condition of the returned items. We will evaluate the received goods before finalizing the return or exchange process. If you have any inquiries or require further assistance regarding returns or exchanges, please don't hesitate to contact us at [email protected]
About packaging
Regarding packaging, our products are carefully packed in anti-static bags to provide ESD anti-static protection. The outer packaging is durable with secure closure. We support various packaging methods such as Tape and Reel, Cut Tape, Tube, or Tray.
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TBC847B,LM DataSheet
Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!
Details
The TBC847B,LM is a versatile voltage amplifier transistor with impressive performance characteristics. With a maximum operating frequency of 800 MHz and a maximum power dissipation of 1100 mW, it is well-suited for a wide range of applications. Its compact SOT-23 surface-mount package makes it easy to integrate into electronic systems, while its high gain bandwidth product of 10 GHz and low-noise figure of 1.4 dB ensure high-quality signal amplification in RF circuits and communication systems
Key Features
- Low noise figure: 1.6dB at 1GHz
- High gain: 11dB at 1GHz
- High linearity: OIP3 of 32.5dBm
- Wide frequency range: 600MHz to 3GHz
- Integrated biasing circuit
Application
- Power management systems
- Automotive electronics
- Industrial control systems
- Consumer electronics
- Medical devices
- Aerospace and defense applications
- Telecommunications equipment
- Sensors and instrumentation
- Robotics
- Home automation
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
| Product Category ! | Bipolar Transistors - BJT | RoHS | Details |
| Mounting Style | SMD/SMT | Package / Case | SOT-23-3 |
| Transistor Polarity | NPN | Configuration | Single |
| Collector- Emitter Voltage VCEO Max | 50 V | Collector- Base Voltage VCBO | 60 V |
| Emitter- Base Voltage VEBO | 6 V | Collector-Emitter Saturation Voltage | 170 mV |
| Maximum DC Collector Current | 150 mA | Pd - Power Dissipation | 320 mW |
| Gain Bandwidth Product fT | 100 MHz | Maximum Operating Temperature ! | + 150 C |
| Series | TBC8X7 | Brand | Toshiba |
| Continuous Collector Current | 150 mA | DC Collector/Base Gain hfe Min | 200 |
| DC Current Gain hFE Max | 450 at 2 mA, 5 V | Product Type ! | BJTs - Bipolar Transistors |
| Factory Pack Quantity | 3000 | Subcategory | Transistors |
| Technology | Si | Unit Weight | 0.001058 oz |
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
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