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TGF2978-SM
GaN Power Amplifier with a gain of 11dB, suitable for frequencies in the 8-12GHz range
TGF2978-SM
GaN Power Amplifier with a gain of 11dB, suitable for frequencies in the 8-12GHz range
Quality Assurance
Quality Assurance
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Certification
We have successfully obtained various certification standards and have established our own professional testing laboratory. This ensures that every product we supply to our customers meets the highest quality standards. We adhere to strict testing protocols to maintain the consistency and accuracy of our products. To ensure that our products are original and genuine, we also collaborate with reputable third-party testing facilities to conduct rigorous quality testing. Our commitment to quality extends to meeting industry, legal, regulatory, and ISO 9001:2015 requirements.
Shipping & Payment
Shipping & Payment
About Shipping
We generally ship orders within a few business days through reliable shipping carriers such as FedEx, SF, UPS, or DHL. We also have support for other shipping methods. If you would like to inquire about specific shipping details or costs, please don't hesitate to reach out to us.
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Service & Packaging
Service & Packaging
About After Sales Service
All Parts Extended Quality Guarantee
Initiate the application within 90 days from the shipment date.
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About packaging
Regarding packaging, our products are carefully packed in anti-static bags to provide ESD anti-static protection. The outer packaging is durable with secure closure. We support various packaging methods such as Tape and Reel, Cut Tape, Tube, or Tray.
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TGF2978-SM DataSheet
Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!
Details
General DescriptionThe TriQuint TGF2929-FL is a 107 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 3.5 GHz. The device is constructed with TriQuint’s proven TQGaN25HV process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs.Product Features• Frequency: DC to 3.5 GHz• Output Power (P3dB): 107 W at 3.5 GHz• Linear Gain:> 14 dB at 3.5 GHz• Typical PAE:> 50% at 3.5 GHz• Operating Voltage: 28 V• Low thermal resistance packageApplications• Military radar• Civilian radar• Professional and military radio communications• Test instrumentation• Wideband or narrowband amplifiers• Jammers
Key Features
- Frequency: DC to 3.5 GHz
- Output Power (P3dB): 107 W at 3.5 GHz
- Linear Gain:> 14 dB at 3.5 GHz
- Typical PAE:> 50% at 3.5 GHz
- Operating Voltage: 28 V
- Low thermal resistance package
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
| Product Category ! | RF JFET Transistors | Shipping Restrictions | This product may require additional documentation to export from the United States. |
| RoHS | Details | Transistor Type | HEMT |
| Technology | GaN SiC | Operating Frequency ! | DC to 12 GHz |
| Gain | 11 dB | Transistor Polarity | N-Channel |
| Vds - Drain-Source Breakdown Voltage | 32 V | Vgs - Gate-Source Breakdown Voltage | - 2.7 V |
| Id - Continuous Drain Current | 1.3 A | Output Power ! | 19 W |
| Maximum Operating Temperature ! | + 225 C | Pd - Power Dissipation | 33 W |
| Mounting Style | SMD/SMT | Package / Case | QFN-20 |
| Brand | Qorvo | Configuration | Single |
| Development Kit | TGF2978-SMEVB1 | Height | 0.203 mm |
| Length | 4 mm | Moisture Sensitive | Yes |
| Number of Channels | 1 Channel | Product Type ! | RF JFET Transistors |
| Series | TGF2978 | Factory Pack Quantity | 50 |
| Subcategory | Transistors | Type | GaN SiC HEMT |
| Width | 3 mm | Part # Aliases | TGF2978 1127373 |
| Unit Weight | 0.004339 oz |
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
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