TH58CVG3S0HRAIJ

Effective Inventory6,022

G-bit NAND Flash Serial-SPI with 1G x 8 capacity and 6ns speed

  • Manufacturer Part # : TH58CVG3S0HRAIJ

  • Package/Case: WSONEP

  • Part Status : ACTIVE

  • Brand: Kioxia America, Inc.

  • Product Categories : Memory

  • RoHS:

Quality Assurance

Quality Assurance

All parts procured from our supply chain network undergo a rigorous incoming inspection process. This meticulous inspection ensures that the parts received by our customers are authentic and meet the required standards. Additionally, we maintain detailed records of these inspections to ensure transparency and traceability throughout the supply chain.

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Certification

We have successfully obtained various certification standards and have established our own professional testing laboratory. This ensures that every product we supply to our customers meets the highest quality standards. We adhere to strict testing protocols to maintain the consistency and accuracy of our products. To ensure that our products are original and genuine, we also collaborate with reputable third-party testing facilities to conduct rigorous quality testing. Our commitment to quality extends to meeting industry, legal, regulatory, and ISO 9001:2015 requirements.

Shipping & Payment

Shipping & Payment

About Shipping

We generally ship orders within a few business days through reliable shipping carriers such as FedEx, SF, UPS, or DHL. We also have support for other shipping methods. If you would like to inquire about specific shipping details or costs, please don't hesitate to reach out to us.

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About Payment

We accept various payment methods, including VISA, MasterCard, UnionPay, Western Union, PayPal, and other channels.

If you have a specific payment method in mind or would like to inquire about rates and other details, please feel free to contact us.

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Service & Packaging

Service & Packaging

About After Sales Service

All Parts Extended Quality Guarantee

Initiate the application within 90 days from the shipment date.

Confirm the return or exchange with our staff.

Maintain the goods in their original condition as received.

Lastly, please note that the eligibility for return or exchange of goods is subject to an assessment of the actual condition of the returned items. We will evaluate the received goods before finalizing the return or exchange process. If you have any inquiries or require further assistance regarding returns or exchanges, please don't hesitate to contact us at [email protected]

About packaging

Regarding packaging, our products are carefully packed in anti-static bags to provide ESD anti-static protection. The outer packaging is durable with secure closure. We support various packaging methods such as Tape and Reel, Cut Tape, Tube, or Tray.

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Example

Tape and Reel

Tape and Reel

Cut Tape

Cut Tape

Tube or Tray

Tube or Tray

TH58CVG3S0HRAIJ DataSheet

no-price

Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!

Rapid Quote

Please submit RFQ for TH58CVG3S0HRAIJ or email to us: Email: [email protected], we will contact you in 12 hours.

Details

The TH58CVG3S0HRAIJ is a 3D NAND flash memory chip developed by Toshiba Memory Corporation. It features a capacity of 512 gigabits (64 gigabytes) and is built using the company's 64-layer BiCS Flash technology. The chip is designed for use in solid-state drives (SSDs) and other high-performance storage solutions.The TH58CVG3S0HRAIJ offers fast read and write speeds, making it suitable for applications that require high-speed data processing and storage. It also features low power consumption, which can help extend battery life in mobile devices and reduce energy costs in data centers.The chip supports a wide range of interfaces, including SATA, PCIe, and NVMe, making it compatible with a variety of devices and systems. Its advanced error correction and data protection features ensure reliable operation and help prevent data loss.

Key Features

  • 128Gb NAND flash memory
  • UFS 2.1 interface
  • High-speed data transfer
  • Low power consumption
  • Wide operating temperature range
  • Reliable storage solution
  • Compatible with various devices
  • Compact and lightweight design
  • Enhanced durability and shock resistance

Application

  • Mobile devices
  • Computers and laptops
  • Digital cameras
  • External storage devices
  • Automotive applications
  • Industrial equipment
  • Medical devices
  • Gaming consoles
  • Networking devices
  • Consumer electronics

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

ECCN (US) 3A991b.1.a. Part Status ! Active
HTS 8542.32.00.71 Cell Type NAND
Chip Density (bit) 8G Architecture Sectored
Boot Block No Block Organization Symmetrical
Address Bus Width (bit) 31 Sector Size 256Kbyte x 4096
Page Size 4Kbyte Number of Bits/Word (bit) 8
Number of Words 1G Programmability Yes
Timing Type Synchronous Max. Access Time (ns) 6
Maximum Erase Time (S) 0.007/Block Maximum Programming Time (ms) 0.6
Interface Type Serial-SPI Minimum Operating Supply Voltage (V) 2.7
Typical Operating Supply Voltage (V) 3.3 Maximum Operating Supply Voltage (V) 3.6
Operating Current (mA) 27 Program Current (mA) 26
Minimum Operating Temperature (°C) -40 Maximum Operating Temperature (°C) 85
Command Compatible No ECC Support Yes
Support of Page Mode Yes Mounting Surface Mount
Package Height 0.75(Max) Package Width 8
Package Length 6 PCB changed 8
Standard Package Name SON Supplier Package WSON EP
Pin Count ! 8

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