TN2524N8-G

Product TN2524N8-G is a N-channel MOSFET with a maximum current rating of 0.36A at 240V in a SOT-89-3 package
6,095 Effective Inventory

TN2524N8-G

Effective Inventory6,095

Product TN2524N8-G is a N-channel MOSFET with a maximum current rating of 0.36A at 240V in a SOT-89-3 package

  • Manufacturer Part # : TN2524N8-G

  • Package/Case: SOT-89-3

  • Part Status : ACTIVE

  • Brand: Microchip

  • Product Categories : Single FETs, MOSFETs

  • RoHS:

Quality Assurance

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All parts procured from our supply chain network undergo a rigorous incoming inspection process. This meticulous inspection ensures that the parts received by our customers are authentic and meet the required standards. Additionally, we maintain detailed records of these inspections to ensure transparency and traceability throughout the supply chain.

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Certification

We have successfully obtained various certification standards and have established our own professional testing laboratory. This ensures that every product we supply to our customers meets the highest quality standards. We adhere to strict testing protocols to maintain the consistency and accuracy of our products. To ensure that our products are original and genuine, we also collaborate with reputable third-party testing facilities to conduct rigorous quality testing. Our commitment to quality extends to meeting industry, legal, regulatory, and ISO 9001:2015 requirements.

Shipping & Payment

Shipping & Payment

About Shipping

We generally ship orders within a few business days through reliable shipping carriers such as FedEx, SF, UPS, or DHL. We also have support for other shipping methods. If you would like to inquire about specific shipping details or costs, please don't hesitate to reach out to us.

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Service & Packaging

Service & Packaging

About After Sales Service

All Parts Extended Quality Guarantee

Initiate the application within 90 days from the shipment date.

Confirm the return or exchange with our staff.

Maintain the goods in their original condition as received.

Lastly, please note that the eligibility for return or exchange of goods is subject to an assessment of the actual condition of the returned items. We will evaluate the received goods before finalizing the return or exchange process. If you have any inquiries or require further assistance regarding returns or exchanges, please don't hesitate to contact us at [email protected]

About packaging

Regarding packaging, our products are carefully packed in anti-static bags to provide ESD anti-static protection. The outer packaging is durable with secure closure. We support various packaging methods such as Tape and Reel, Cut Tape, Tube, or Tray.

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TN2524N8-G DataSheet
no-price

Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!

Rapid Quote

Please submit RFQ for TN2524N8-G or email to us: Email: [email protected], we will contact you in 12 hours.

Details

The TN2524N8-G is a cutting-edge enhancement-mode transistor that boasts a vertical DMOS structure and a silicon-gate manufacturing process. With the power handling capabilities of bipolar transistors and the high input impedance of MOS devices, this transistor offers optimal performance for a variety of applications

Key Features

    • Suitable for general-purpose applications
    • Good noise immunity
    • Fast response time
    • Low power consumption
    • Robust construction

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category ! MOSFET RoHS Details
Technology Si Mounting Style SMD/SMT
Package / Case SOT-89-3 Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 240 V
Id - Continuous Drain Current 360 mA Rds On - Drain-Source Resistance 6 Ohms
Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 600 mV
Minimum Operating Temperature - 55 C Maximum Operating Temperature ! + 150 C
Pd - Power Dissipation 1.6 W Channel Mode Enhancement
Brand Microchip Technology Configuration Single
Fall Time 20 ns Forward Transconductance - Min 300 mS
Height 1.6 mm Length 4.6 mm
Product MOSFET Small Signals Product Type ! MOSFET
Rise Time ! 10 ns Factory Pack Quantity 2000
Subcategory MOSFETs Transistor Type 1 N-Channel
Type FET Typical Turn-Off Delay Time 20 ns
Typical Turn-On Delay Time 10 ns Width 2.6 mm
Unit Weight 0.001862 oz

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