TPHR6503PL,L1Q

Effective Inventory6,938

N-channel Silicon MOSFET with a voltage threshold of 30V and a maximum current rating of 393A in an 8-pin Small Outline Package

  • Manufacturer Part # : TPHR6503PL,L1Q

  • Package/Case: 8-PowerVDFN

  • Part Status : ACTIVE

  • Brand: Toshiba Semiconductor and Storage

  • Product Categories : Single FETs, MOSFETs

  • RoHS:

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Service & Packaging

Service & Packaging

About After Sales Service

All Parts Extended Quality Guarantee

Initiate the application within 90 days from the shipment date.

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Regarding packaging, our products are carefully packed in anti-static bags to provide ESD anti-static protection. The outer packaging is durable with secure closure. We support various packaging methods such as Tape and Reel, Cut Tape, Tube, or Tray.

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TPHR6503PL,L1Q DataSheet

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Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!

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Please submit RFQ for TPHR6503PL,L1Q or email to us: Email: [email protected], we will contact you in 12 hours.

Details

The TPHR6503PL,L1Q is a high-performance, low on-resistance N-channel power MOSFET designed for use in high current applications. With a voltage rating of 30V and a maximum continuous drain current of 150A, this MOSFET is capable of handling high power loads efficiently. The TPHR6503PL,L1Q comes in an 8-pin SOP (Small Outline Package) which makes it easy to mount on a circuit board and is suitable for a wide range of electronic devices and applications where power efficiency and performance are essential. This MOSFET features a low gate charge, which allows for fast switching speeds and reduces power losses, making it ideal for use in power management circuits, motor control, voltage regulation, and other applications that require high current handling capabilities. Additionally, the TPHR6503PL,L1Q has a low threshold voltage and high transconductance, which further enhances its performance and efficiency.

Key Features

  • 650V, 3A MOSFET
  • Low RDS(ON) of 1.5 ohms
  • Low gate charge for fast switching
  • Halogen-free and RoHS compliant
  • Operating temperature range of -55°C to 150°C
  • TO-220 package for easy mounting

Application

  • Automotive lighting
  • Industrial lighting
  • Architectural lighting
  • General lighting applications
  • Street lighting

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Series U-MOSIX-H Product Status Active
FET Type N-Channel Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V Current - Continuous Drain (Id) @ 25°C 150A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 0.65mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 2.1V @ 1mA Gate Charge (Qg) (Max) @ Vgs 110 nC @ 10 V
Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 10000 pF @ 15 V
Power Dissipation (Max) 960mW (Ta), 170W (Tc) Operating Temperature ! 175°C
Mounting Type Surface Mount Supplier Device Package 8-SOP Advance (5x5)
Package / Case 8-PowerVDFN Base Product Number TPHR6503

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