UF3SC065040D8S

Effective Inventory9,281

Fast Silicon Carbide Field-Effect Transistors for Switching Applications

  • Manufacturer Part # : UF3SC065040D8S

  • Package/Case: DFN-8

  • Part Status : OBSOLETE

  • Brand: Qorvo

  • Product Categories : Single FETs, MOSFETs

  • RoHS:

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Shipping & Payment

Shipping & Payment

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Service & Packaging

Service & Packaging

About After Sales Service

All Parts Extended Quality Guarantee

Initiate the application within 90 days from the shipment date.

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Regarding packaging, our products are carefully packed in anti-static bags to provide ESD anti-static protection. The outer packaging is durable with secure closure. We support various packaging methods such as Tape and Reel, Cut Tape, Tube, or Tray.

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UF3SC065040D8S DataSheet

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Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!

Rapid Quote

Please submit RFQ for UF3SC065040D8S or email to us: Email: [email protected], we will contact you in 12 hours.

Details

The UF3SC065040D8S is an electronic component categorized as a SICFET N-CH 650V 18A 4DFN. This component is a silicon carbide power metal-oxide-semiconductor field-effect transistor (SICFET), designed for high power, high frequency applications. With a voltage rating of 650V and a maximum current rating of 18A, the UF3SC065040D8S is capable of handling high power levels efficiently. The "N-CH" designation indicates that it is a N-channel transistor, which means it is controlled by a negative voltage applied to the gate terminal. The 4DFN package type denotes a small surface-mount package with four leads, designed for compact and efficient circuit designs. This package is suitable for applications where space is limited, such as in automotive electronics, industrial power supplies, or renewable energy systems.

Key Features

  • Part number: UF3SC065040D8S
  • Manufacturer: Unknown
  • Package: D8S
  • Voltage: 65V
  • Current: 40A
  • Features: Unspecified

Application

  • Portable electronics
  • Home appliances
  • Medical devices
  • Automotive systems
  • Industrial equipment
  • Telecommunications
  • Power supplies
  • LED lighting
  • Solar inverters
  • Renewable energy systems

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Status Obsolete FET Type N-Channel
Technology SiC Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 18A (Tc) Drive Voltage (Max Rds On, Min Rds On) 12V
Rds On (Max) @ Id, Vgs 58mOhm @ 20A, 12V Vgs(th) (Max) @ Id 6V @ 10mA
Gate Charge (Qg) (Max) @ Vgs 43 nC @ 12 V Vgs (Max) ±25V
Input Capacitance (Ciss) (Max) @ Vds 1500 pF @ 100 V Power Dissipation (Max) 125W (Tc)
Operating Temperature ! -55°C ~ 150°C (TJ) Mounting Type Surface Mount
Supplier Device Package 4-DFN (8x8) Package / Case DFN-8
Base Product Number UF3SC065040 Manufacturer Qorvo
Product Category ! MOSFET RoHS Details
Mounting Style SMD/SMT Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 650 V
Id - Continuous Drain Current 18 A Rds On - Drain-Source Resistance 58 Ohms
Vgs - Gate-Source Voltage - 25 V, + 25 V Vgs th - Gate-Source Threshold Voltage 6 V
Qg - Gate Charge 43 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature ! + 150 C Pd - Power Dissipation 125 W
Channel Mode Enhancement Tradename SiC FET
Series UF3SC Brand Qorvo / UnitedSiC
Configuration Single Fall Time 9 ns
Moisture Sensitive Yes Product Type ! MOSFET
Rise Time ! 18 ns Factory Pack Quantity 30
Subcategory MOSFETs Transistor Type 1 N-Channel
Typical Turn-Off Delay Time 44 ns Typical Turn-On Delay Time 24 ns
Unit Weight 0.005686 oz

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