UJ3N065080K3S
650V/80mOhm SiC N-ON JFET G3 TO-247-3L JFET REDUCED RthUJ3N065080K3S
650V/80mOhm SiC N-ON JFET G3 TO-247-3L JFET REDUCED Rth
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Shipping & Payment
Shipping & Payment
About Shipping
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Service & Packaging
Service & Packaging
About After Sales Service
All Parts Extended Quality Guarantee
Initiate the application within 90 days from the shipment date.
Confirm the return or exchange with our staff.
Maintain the goods in their original condition as received.
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UJ3N065080K3S DataSheet
Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!
Details
The UJ3N065080K3S is a Junction Field Effect Transistor (JFET) designed for use in high voltage and high current applications. It is an N-channel transistor with a voltage rating of 650V and a maximum current capacity of 32A. The TO247-3 package type indicates that it has a through-hole mounting style with three leads. This electronic component is commonly used in power supply circuits, motor control systems, and other industrial applications where high voltage switching is required. The N-channel design allows for efficient switching and control of current flow, making it suitable for various power management tasks. The UJ3N065080K3S offers high power handling capabilities and low on-state resistance, resulting in minimal power losses during operation. It is designed to withstand high voltage spikes and provide reliable performance in demanding environments.
Key Features
- Low on-resistance
- Fast switching speed
- Low gate charge
- Avalanche energy rating
- Low reverse recovery charge
- RoHS compliant
Application
- Automotive industry for powertrain applications
- Industrial automation for robotics and motion control
- Renewable energy for inverters and solar power systems
- Medical equipment for imaging and diagnostic devices
- Aerospace and defense for avionics and communication systems
- Telecommunications for high-frequency signal transmission
- Consumer electronics for efficient power management
- Power supply units for various electronic devices
- Advanced power distribution systems in smart grids
- High-speed data communication for data centers and networking
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Manufacturer | Qorvo | Product Category ! | JFET |
RoHS | Details | Technology | SiC |
Mounting Style | Through Hole | Package / Case | TO-247-3 |
Transistor Polarity | N-Channel | Configuration | Single |
Vds - Drain-Source Breakdown Voltage | 650 V | Vgs - Gate-Source Breakdown Voltage | 20 V |
Id - Continuous Drain Current | 32 A | Rds On - Drain-Source Resistance | 80 mOhms |
Pd - Power Dissipation | 190 W | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature ! | + 175 C | Series | UJ3N |
Qualification | AEC-Q101 | Brand | Qorvo |
Product Type ! | JFETs | Factory Pack Quantity | 30 |
Subcategory | Transistors | Tradename | Sic JFET |
Unit Weight | 0.546358 oz |
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