XPN3R804NC,L1XHQ
This MOSFET has a threshold voltage of 2.5V at 300uA and comes in a TSON-8(3.1x3.1) packageXPN3R804NC,L1XHQ
This MOSFET has a threshold voltage of 2.5V at 300uA and comes in a TSON-8(3.1x3.1) package
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Manufacturer Part # : XPN3R804NC,L1XHQ
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Package/Case: TSONAdvance-8
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Brand: Toshiba Semiconductor And Storage
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Product Categories : Single FETs, MOSFETs
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Shipping & Payment
Shipping & Payment
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Service & Packaging
Service & Packaging
About After Sales Service
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Regarding packaging, our products are carefully packed in anti-static bags to provide ESD anti-static protection. The outer packaging is durable with secure closure. We support various packaging methods such as Tape and Reel, Cut Tape, Tube, or Tray.
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XPN3R804NC,L1XHQ DataSheet
Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!
Details
Lisleapex Semiconductor offers the highly versatile and reliable XPN3R804NC,L1XHQ driver, produced by Toshiba Semiconductor And Storage. With its multifunctional and high-performance capabilities, this component is an excellent choice for a wide range of electronic projects.
To ensure that you have all the necessary information to make the most of this component, Lisleapex provides a free datasheet PDF, as well as circuit diagrams, pin layouts, pin details, pin voltage ratings, and equivalent components for the XPN3R804NC,L1XHQ.
Lisleapex also offers free samples. Simply fill out and submit the sample request form to receive your free samples for testing. If you have any questions, please feel free to contact us at any time.
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Category ! | MOSFET | RoHS | Details |
Technology | Si | Mounting Style | SMD/SMT |
Package / Case | TSON-Advance-8 | Transistor Polarity | N-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 40 V |
Id - Continuous Drain Current | 40 A | Rds On - Drain-Source Resistance | 3.8 mOhms |
Vgs - Gate-Source Voltage | - 20 V, + 20 V | Vgs th - Gate-Source Threshold Voltage | 2.5 V |
Qg - Gate Charge | 35 nC | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature ! | + 175 C | Pd - Power Dissipation | 100 W |
Channel Mode | Enhancement | Qualification | AEC-Q101 |
Series | UMOS VIII | Brand | Toshiba |
Fall Time | 17 ns | Product Type ! | MOSFET |
Rise Time ! | 17 ns | Factory Pack Quantity | 5000 |
Subcategory | MOSFETs | Transistor Type | 1 N-Channel |
Typical Turn-Off Delay Time | 66 ns | Typical Turn-On Delay Time | 38 ns |
Part # Aliases | XPN3R804NC,L1XHQ(O | Unit Weight | 0.000705 oz |
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