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ZVN4525E6TA
The specifications of product ZVN4525E6TA outline it as a small signal FET with a current rating of 0
ZVN4525E6TA
The specifications of product ZVN4525E6TA outline it as a small signal FET with a current rating of 0
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We have successfully obtained various certification standards and have established our own professional testing laboratory. This ensures that every product we supply to our customers meets the highest quality standards. We adhere to strict testing protocols to maintain the consistency and accuracy of our products. To ensure that our products are original and genuine, we also collaborate with reputable third-party testing facilities to conduct rigorous quality testing. Our commitment to quality extends to meeting industry, legal, regulatory, and ISO 9001:2015 requirements.
Shipping & Payment
Shipping & Payment
About Shipping
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Service & Packaging
Service & Packaging
About After Sales Service
All Parts Extended Quality Guarantee
Initiate the application within 90 days from the shipment date.
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Regarding packaging, our products are carefully packed in anti-static bags to provide ESD anti-static protection. The outer packaging is durable with secure closure. We support various packaging methods such as Tape and Reel, Cut Tape, Tube, or Tray.
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ZVN4525E6TA DataSheet
Pricing (USD)
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | $0.479 | $0.48 |
| 10 | $0.423 | $4.23 |
| 30 | $0.393 | $11.79 |
| 100 | $0.366 | $36.60 |
| 500 | $0.302 | $151.00 |
| 1000 | $0.294 | $294.00 |
These prices are subject to market fluctuations, and a quote submission is required to obtain the latest prices.
Details
The ZVN4525E6TA is a high-performance N-channel transistor that is specifically designed for low power applications. With a maximum continuous drain current of 450mA and a low on-state resistance of 4.7 ohms, this transistor offers efficient operation in a compact package. Its gate-source voltage of ±20V and drain-source voltage of 25V make it suitable for a wide range of electronic devices, from power management circuits to LED driver circuits
Key Features
- High voltage
- Low on-resistance
- Fast switching speed
- Low threshold
- Low gate drive
- Complementary P-channel Type ZVP4525E6
- Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
- Halogen and Antimony Free. “Green” Device (Note 3)
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
| Rohs Code | Yes | Part Life Cycle Code | Transferred |
| Reach Compliance Code | ECCN Code | EAR99 | |
| Configuration | SINGLE WITH BUILT-IN DIODE | DS Breakdown Voltage-Min | 250 V |
| Drain Current-Max (ID) | 0.23 A | Drain-source On Resistance-Max | 8.5 Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | JESD-30 Code | R-PDSO-G6 |
| JESD-609 Code | e3 | Moisture Sensitivity Level | 1 |
| Number of Elements | 1 | Number of Terminals | 6 |
| Operating Mode ! | ENHANCEMENT MODE | Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR | Package Style | SMALL OUTLINE |
| Peak Reflow Temperature (Cel) | 260 | Polarity/Channel Type | N-CHANNEL |
| Qualification Status ! | Not Qualified | Surface Mount ! | YES |
| Terminal Finish | Matte Tin (Sn) | Terminal Form ! | GULL WING |
| Terminal Position | DUAL | Time@Peak Reflow Temperature-Max (s) | 40 |
| Transistor Application | SWITCHING | Transistor Element Material | SILICON |
| Manufacturer | Diodes Incorporated | Product Category ! | MOSFET |
| RoHS | Details | Technology | Si |
| Mounting Style | SMD/SMT | Package / Case | SOT-26-6 |
| Transistor Polarity | N-Channel | Number of Channels | 1 Channel |
| Vds - Drain-Source Breakdown Voltage | 250 V | Id - Continuous Drain Current | 230 mA |
| Rds On - Drain-Source Resistance | 8.5 Ohms | Vgs - Gate-Source Voltage | - 40 V, + 40 V |
| Vgs th - Gate-Source Threshold Voltage | 800 mV | Qg - Gate Charge | 2.6 nC |
| Minimum Operating Temperature | - 55 C | Maximum Operating Temperature ! | + 150 C |
| Pd - Power Dissipation | 1.1 W | Channel Mode | Enhancement |
| Series | ZVN4525 | Brand | Diodes Incorporated |
| Fall Time | 3.5 ns | Forward Transconductance - Min | 0.3 S |
| Height | 1.3 mm | Length | 3.1 mm |
| Product | MOSFET Small Signal | Product Type ! | MOSFET |
| Rise Time ! | 1.7 ns | Factory Pack Quantity | 3000 |
| Subcategory | MOSFETs | Transistor Type | 1 N-Channel |
| Type | FET | Typical Turn-Off Delay Time | 11.4 ns |
| Typical Turn-On Delay Time | 1.25 ns | Width | 1.8 mm |
| Unit Weight | 0.000529 oz |
Specification Comparison
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
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