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ZVP4525E6
Small Signal Field-Effect Transistor with 0.197A I(D), 250V, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 6 PIN
ZVP4525E6
Small Signal Field-Effect Transistor with 0.197A I(D), 250V, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 6 PIN
Quality Assurance
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We have successfully obtained various certification standards and have established our own professional testing laboratory. This ensures that every product we supply to our customers meets the highest quality standards. We adhere to strict testing protocols to maintain the consistency and accuracy of our products. To ensure that our products are original and genuine, we also collaborate with reputable third-party testing facilities to conduct rigorous quality testing. Our commitment to quality extends to meeting industry, legal, regulatory, and ISO 9001:2015 requirements.
Shipping & Payment
Shipping & Payment
About Shipping
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Service & Packaging
Service & Packaging
About After Sales Service
All Parts Extended Quality Guarantee
Initiate the application within 90 days from the shipment date.
Confirm the return or exchange with our staff.
Maintain the goods in their original condition as received.
Lastly, please note that the eligibility for return or exchange of goods is subject to an assessment of the actual condition of the returned items. We will evaluate the received goods before finalizing the return or exchange process. If you have any inquiries or require further assistance regarding returns or exchanges, please don't hesitate to contact us at [email protected]
About packaging
Regarding packaging, our products are carefully packed in anti-static bags to provide ESD anti-static protection. The outer packaging is durable with secure closure. We support various packaging methods such as Tape and Reel, Cut Tape, Tube, or Tray.
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ZVP4525E6 DataSheet
Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!
Details
The ZVP4525E6 is a power MOSFET transistor designed for high-speed switching applications in power supplies, motor control, and DC-DC converters. It features a 30V drain-source voltage, a maximum continuous drain current of 14A, and a low on-resistance of 25mΩ. The transistor has a compact and surface-mount SOT223 package, making it suitable for space-constrained applications.The ZVP4525E6 has a gate-source threshold voltage of 2V, ensuring efficient on/off switching control. It also has a fast switching speed and low gate charge, reducing switching losses and improving overall efficiency. The transistor's rugged design and high reliability make it suitable for harsh environments and industrial applications.Furthermore, the ZVP4525E6 has a wide operating temperature range of -55°C to 150°C, allowing it to be used in a variety of temperature-sensitive applications. Its compact size, low on-resistance, and high current handling capabilities make it a versatile and reliable choice for a wide range of power semiconductor applications
Key Features
- 5MP high resolution
- 2.8mm fixed lens
- EXIR 2.0 technology for up to 100ft night vision
- IP67 weatherproof rating
- Metal housing for durability
- H.265+ video compression for efficient storage
- Support for PoE (Power over Ethernet)
Application
- Automotive electronic systems
- Industrial control systems
- Solar inverters
- Switching power supplies
- Motor control
- Battery management systems
- DC-DC converters
- LED lighting
- Renewable energy systems
- Uninterruptible power supplies
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
| Rohs Code | Yes | Part Life Cycle Code | Obsolete |
| Reach Compliance Code | ECCN Code | EAR99 | |
| Configuration | SINGLE WITH BUILT-IN DIODE | DS Breakdown Voltage-Min | 250 V |
| Drain Current-Max (ID) | 0.197 A | Drain-source On Resistance-Max | 14 Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | JESD-30 Code | R-PDSO-G6 |
| JESD-609 Code | e3 | Moisture Sensitivity Level | 1 |
| Number of Elements | 1 | Number of Terminals | 6 |
| Operating Mode ! | ENHANCEMENT MODE | Operating Temperature-Max | 150 °C |
| Operating Temperature-Min | -55 °C | Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR | Package Style | SMALL OUTLINE |
| Polarity/Channel Type | P-CHANNEL | Qualification Status ! | Not Qualified |
| Surface Mount ! | YES | Terminal Finish | MATTE TIN |
| Terminal Form ! | GULL WING | Terminal Position | DUAL |
| Transistor Application | SWITCHING | Transistor Element Material | SILICON |
| Product Category ! | MOSFET | Brand | Diodes Incorporated |
| Product Type ! | MOSFET | Subcategory | MOSFETs |
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
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