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Specification Comparison: BSC010N04LS6ATMA1 vs BSC010NE2LSI vs BSC010NE2LSATMA1
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Part Number
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| Manufacturer | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PGTDSON-8 | 8-PowerTDFN | TDSON-8 |
| Description | BSC010N04LS6ATMA1 N-Channel MOSFET in Tape and Reel Packaging | Transistor BSC010NE2LSI | Transistor BSC010NE2LSATMA1 is a N-channel MOSFET designed for a voltage of 25V and a current of 39A |
| Stock | 9711 | 7359 | 8574 |
| functionalPacking | TAPE & REEL | TAPE & REEL | |
| addProductInfo | RoHS compliant, non dry | MS, RoHS compliant, non dry | |
| packageNameMarketing | SuperSO8 FL | SuperSO8 5x6 | |
| msl | 1 | 1 | |
| halogenFree | yes | yes | |
| customerInfo | STANDARD | STANDARD | |
| fgr | Y35 | 015 | |
| productClassification | ASP | COM | |
| productStatusInfo | active and preferred | active and preferred | |
| hfgr | A | A | |
| packageName | PG-TDSON-8 | PG-TDSON-8 | |
| pbFree | yes | yes | |
| moistureProtPack | NON DRY | NON DRY | |
| fourBlockPackageName | PG-TDSON-8-36 | PG-TDSON-8-1 | |
| rohsCompliant | yes | yes | |
| opn | BSC010N04LS6ATMA1 | BSC010NE2LSATMA1 | |
| completelyPbFree | no | no | |
| sapMatnrSali | SP001687044 | SP000776124 | |
| IDpuls max | 944.0 A | ||
| Ptot max | 96.0 W | ||
| VDS max | 25.0 V | ||
| Polarity | N | ||
| RDS (on) max | 1.4 mΩ | ||
| Special Features | Monolithically Integrated Schottky-like Diode | ||
| ID max | 236.0 A | ||
| VGS(th) max | 2.0 V | ||
| VGS(th) min | 1.2 V | ||
| Operating Temperature max | 150.0 °C | ||
| Operating Temperature min | -55.0 °C |
Part Number
Start with: BSC01
Part Number "BSC01" returned 21 results; all results matched and started with "BSC01".
| Part Number | Description | Brand | Package/Case | Lifecycle Status | Cargo cycle | In Stock | Operation |
|---|---|---|---|---|---|---|---|
| BSC018N04LS G |
BSC018N04LS G is an N-channel MOSFET designed for voltage applications up to 40V and current ratings up to 100A |
INFINEON | TDSON-8 | Active | 3~7 Days | 4,290.00 | |
| BSC017N04NS G |
BSC017N04NS G is a high-performance N-channel MOSFET designed for efficient power management |
INFINEON | TDSON-8 | Active | 3~7 Days | 3,147.00 | |
| BSC016N06NS |
High-power N-channel MOSFET for demanding applications |
Infineon | SuperSO8 | 3~7 Days | 5,480.00 | ||
| BSC016N06NST |
Power Field-Effect Transistor |
INFINEON | SON | 3~7 Days | 5,647.00 | ||
| BSC019N08NS5 |
The BSC019N08NS5 is a high-speed, low on-resistance power MOSFET chip. |
INFINEON | SON | 3~7 Days | 7,457.00 | ||
| BSC016N04LS G |
MOSFET N-CH 40V 31A/100A TDSON |
INFINEON | TDSON-8 | Active | 3~7 Days | 5,363.00 | |
| BSC016N06NSATMA1 |
Single N-Channel 60 V 1.6 mOhm 71 nC OptiMOS Power Mosfet - TDSON-8 FL |
Infineon | PG-TDSON-8 | ACTIVE | 3~7 Days | 5,242.00 | |
| BSC014N06NSATMA1 |
N-channel OptiMOS MOSFET capable of handling 60V and 100A |
Infineon Technologies | PGTDSON-8 | ACTIVE | 3~7 Days | 6,621.00 | |
| BSC010N04LSIATMA1 |
Transistor MOSFET N-channel with 40V voltage and 37A current in an 8-pin TDSON EP package for tape and reel packaging |
Infineon Technologies | PGTDSON-8 | ACTIVE | 3~7 Days | 8,607.00 | |
| BSC014N04LSATMA1 |
TDSON-8 FL OptiMOS MOSFET rated for 40V and 100A operation |
Infineon | PG-TDSON-8 | ACTIVE | 3~7 Days | 6,324.00 | |
| BSC018N04LSGXT |
N-channel MOSFET rated at 40V and 100A, housed in TDSON-8 package OptiMOS 3 |
Infineon | TDSON-8 | 3~7 Days | 6,214.00 | ||
| BSC016N04LSG |
The power dissipation capability of BSC016N04LS G is 139W |
Infineon Technologies | TDFN-8 | 3~7 Days | 2,476.00 | ||
| BSC016N03LSG |
OptiMOS 3 series offers high efficiency and reduced energy losses in a compact TO-247 package |
Infineon Technologies | 8-PowerTDFN | NRND | 3~7 Days | 7,593.00 | |
| BSC014NE2LSI |
25V, 33A power MOSFET with 8-pin TDSON EP package |
Infineon Technologies | 8-PowerTDFN | ACTIVE | 3~7 Days | 7,363.00 | |
| BSC014N04LS |
The BSC014N04LS is a MOSFET transistor designed for N-channel applications |
Infineon Technologies | 8-PowerTDFN | ACTIVE | 3~7 Days | 5,412.00 | |
| BSC011N03LSI |
With specifications indicating a 37-amp current handling capacity and a 30-volt voltage rating |
Infineon Technologies | 8-PowerTDFN | ACTIVE | 3~7 Days | 6,998.00 | |
| BSC018NE2LSIXT |
OptiMOS MOSFET, N-channel, 25V, 100A, TDSON-8 package |
Infineon | TDSON-8 | 3~7 Days | 6,160.00 | ||
| BSC018NE2LSI |
25V 29A 8-pin N-channel TDSON EP T/R MOSFET |
Infineon Technologies | 8-PowerTDFN | ACTIVE | 3~7 Days | 7,467.00 | |
| BSC018NE2LS |
Trans MOSFET N-Channel 25V 29A Automotive |
Infineon Technologies | 8-PowerTDFN | ACTIVE | 3~7 Days | 7,180.00 | |
| BSC016N03LSGXT |
OptiMOS 3 technology enhances performance |
Infineon | TDSON-8 | NRND | 3~7 Days | 9,664.00 | |
| BSC014NE2LSIXT |
notch MOSFET transistor |
Infineon | TDSON-8 | 3~7 Days | 8,326.00 |