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Specification Comparison: BSM300GA120DN2FS vs BSM300GA120DN2S vs BSM300GA120DLC
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| Manufacturer | Infineon Technologies | Infineon | Infineon Technologies |
| Package | Module | 62 mm | Module |
| Description | IGBT Modules with a voltage rating of 1200V and a current handling capacity of 300A | Description of BSM300GA120DN2S: An Insulated Gate Bipolar Transistor characterized by a maximum current of 430A and a breakdown voltage of 1200V | Insulated Gate Bipolar Transistor, N-Channel, 1200V V(BR)CES, 570A I(C) |
| Stock | 7362 | 3903 | 7909 |
| Configuration | Single | Single | |
| Package / Case | 62 mm | Module | |
| Product Category | IGBT Modules | IGBT Modules | |
| Brand | Infineon Technologies | Infineon Technologies | |
| Product Type | IGBT Modules | IGBT Modules | |
| Factory Pack Quantity | 10 | 1 | |
| Subcategory | IGBTs | IGBTs | |
| Product Status | Obsolete | ||
| Voltage - Collector Emitter Breakdown (Max) | 1200 V | ||
| Current - Collector (Ic) (Max) | 570 A | ||
| Power - Max | 2250 W | ||
| Vce(on) (Max) @ Vge, Ic | 2.6V @ 15V, 300A | ||
| Current - Collector Cutoff (Max) | 5 mA | ||
| Input Capacitance (Cies) @ Vce | 22 nF @ 25 V | ||
| Input | Standard | ||
| NTC Thermistor | No | ||
| Operating Temperature | -40°C ~ 125°C | ||
| Mounting Type | Chassis Mount | ||
| Supplier Device Package | Module | ||
| Base Product Number | BSM300 | ||
| RoHS | N | ||
| Product | IGBT Silicon Modules | ||
| Collector- Emitter Voltage VCEO Max | 1.2 kV | ||
| Collector-Emitter Saturation Voltage | 2.5 V | ||
| Continuous Collector Current at 25 C | 430 A | ||
| Gate-Emitter Leakage Current | 320 nA | ||
| Pd - Power Dissipation | 2500 W | ||
| Minimum Operating Temperature | - 40 C | ||
| Maximum Operating Temperature | + 150 C | ||
| Height | 36.5 mm | ||
| Length | 106.4 mm | ||
| Maximum Gate Emitter Voltage | 20 V | ||
| Mounting Style | Chassis Mount | ||
| Technology | Si | ||
| Width | 61.4 mm |
Part Number
Start with: BSM30
Part Number "BSM30" returned 20 results; all results matched and started with "BSM30".
| Part Number | Description | Brand | Package/Case | Lifecycle Status | Cargo cycle | In Stock | Operation |
|---|---|---|---|---|---|---|---|
| BSM300GA120DN2 |
Module for IGBT Transistor with N-Channel, 1200 Volts |
Infineon | 62 mm | OBSOLETE | 3~7 Days | 7,700.00 | |
| BSM30GP60 |
180W Power Rating |
Infineon | EconoPIM2 | OBSOLETE | 3~7 Days | 9,952.00 | |
| BSM300D12P2E001 |
Dual N-CH 1200V 300A |
Rohm Semiconductor | Module | ACTIVE | 3~7 Days | 7,985.00 | |
| BSM30GD60DLC |
Trans IGBT Module N-CH 600V 40A 135mW 17-Pin ECONO2-1 |
Infineon Technologies | Module | OBSOLETE | 3~7 Days | 8,078.00 | |
| BSM300GB60DLC |
Contact us for details |
Infineon Technologies | Module | OBSOLETE | 3~7 Days | 7,486.00 | |
| BSM300GB120DLC |
Reliable and robust pin module design for industrial and commercial application |
Infineon | 62 mm | 3~7 Days | 5,375.00 | ||
| BSM300D12P3E005 |
11-Pin Silicon Carbide Transistor, N-Type, 1.2KV, 300A Capacity |
Rohm Semiconductor | Module | ACTIVE | 3~7 Days | 5,559.00 | |
| BSM3000GB120DLC |
|
EUPEC | 3~7 Days | 59.00 | |||
| BSM300DY-24H |
|
EUPEC | 3~7 Days | 80.00 | |||
| BSM300G120DLC |
|
INFINEON | 3~7 Days | 500.00 | |||
| BSM300G120DLCS |
|
INFINEON | 62mm | 3~7 Days | 500.00 | ||
| BSM300G120DN2 |
|
INFINEON | 3~7 Days | 980.00 | |||
| BSM300GA100D |
|
SIEMENS | IGBT | 3~7 Days | 226.00 | ||
| BSM300GA120 |
|
IFX | IGBT | 3~7 Days | 250.00 | ||
| BSM300GA120D |
|
INFINEON | module | 3~7 Days | 176.00 | ||
| BSM300GA120DLC |
|
INFINEON | 62 mm | 3~7 Days | 1,650.00 | ||
| BSM300GA120DLCS |
|
INFINEON/EUPEC | 62 mm | 3~7 Days | 110.00 | ||
| BSM300GA120DLCSB7 |
|
INFINEON | 3~7 Days | 1.00 | |||
| BSM300GA120DLCSE3256 |
|
EUPEC | 3~7 Days | 50.00 | |||
| BSM300GA120DLE |
|
EUPEC | 3~7 Days | 100.00 |