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Specification Comparison: CSD18531Q5A vs CSD18537NQ5AT vs CSD18532Q5BT
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| Manufacturer | Texas Instruments | Texas Instruments | Texas Instruments |
| Package | VSONP (DQJ)-8 | (DQJ) | 8 | (DNK) | 8 |
| Description | 60V MOSFET with 4.6mΩ resistance at 22A and 10V threshold at 250uA | Trans MOSFET N-CH Si 60V 50A 8-Pin VSONP EP T/R | Trans MOSFET N-CH Si 60V 100A 8-Pin VSON-CLIP EP T/R |
| Stock | 6551 | 7284 | 5006 |
| VDS (V) | 60 | 60 | 60 |
| Configuration | Single | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
| Rds(on) at VGS=10 V (max) (mΩ) | 4.6 | 13 | 3.2 |
| IDM - pulsed drain current (max) (A) | 300 | 151 | 400 |
| QG (typ) (nC) | 36 | 14 | 44 |
| QGD (typ) (nC) | 5.9 | 2.3 | 6.9 |
| QGS (typ) (nC) | 6.9 | 4.7 | 10 |
| VGS (V) | 20 | 20 | 20 |
| VGSTH typ (typ) (V) | 1.8 | 3 | 1.8 |
| ID - silicon limited at TC=25°C (A) | 134 | 54 | 172 |
| ID - package limited (A) | 100 | 50 | 100 |
| Logic level | Yes | No | Yes |
| Operating temperature range (°C) | -55 to 150 | -55 to 150 | -55 to 150 |
| Rating | Catalog | Catalog | Catalog |
| Rds(on) at VGS=4.5 V (max) (mΩ) | 5.8 | 4.3 | |
| Pbfree Code | Yes | Yes | |
| Rohs Code | No | No | |
| Part Life Cycle Code | Active | Active | |
| Reach Compliance Code | not_compliant | not_compliant | |
| ECCN Code | EAR99 | EAR99 | |
| HTS Code | 8541.29.00.95 | 8541.29.00.95 | |
| Additional Feature | AVALANCHE RATED | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 55 mJ | 320 mJ | |
| Case Connection | DRAIN | DRAIN | |
| DS Breakdown Voltage-Min | 60 V | 60 V | |
| Drain Current-Max (ID) | 11 A | 23 A | |
| Drain-source On Resistance-Max | 0.017 Ω | 0.0043 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 5.2 pF | 17 pF | |
| JESD-30 Code | R-PDSO-N8 | R-PDSO-N8 | |
| JESD-609 Code | e3 | e3 | |
| Moisture Sensitivity Level | 1 | 1 | |
| Number of Elements | 1 | 1 | |
| Number of Terminals | 8 | 8 | |
| Operating Mode | ENHANCEMENT MODE | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | 150 °C | |
| Operating Temperature-Min | -55 °C | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | RECTANGULAR | |
| Package Style | SMALL OUTLINE | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | 260 | |
| Polarity/Channel Type | N-CHANNEL | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 151 A | 400 A | |
| Surface Mount | YES | YES | |
| Terminal Finish | MATTE TIN | MATTE TIN | |
| Terminal Form | NO LEAD | NO LEAD | |
| Terminal Position | DUAL | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | 30 | |
| Transistor Application | SWITCHING | SWITCHING | |
| Transistor Element Material | SILICON | SILICON |
Part Number
Start with: CSD18
Part Number "CSD18" returned 20 results; all results matched and started with "CSD18".
| Part Number | Description | Brand | Package/Case | Lifecycle Status | Cargo cycle | In Stock | Operation |
|---|---|---|---|---|---|---|---|
| CSD18563Q5AT |
MOSFET 60V NCh NexFET Power MOSFET |
Texas Instruments | VSONP-8 | 3~7 Days | 3,821.00 | ||
| CSD18536KCS |
Product CSD18536KCS is a single TO-220 packaged power MOSFET |
Texas Instruments | TO-220 (KCS)-3 | 3~7 Days | 3,239.00 | ||
| CSD18504Q5A |
CSD18504Q5A MOSFET operates effectively at a current of 17A while dissipating 3.1W of power at a voltage drop of 2.4V with a leakage current of 250uA |
Texas Instruments | VSONP (DQJ)-8 | 3~7 Days | 2,416.00 | ||
| CSD18532Q5B |
N-Channel Silicon Transistor MOSFET with 60V Voltage Rating and 100A Current Rating in 8-Pin VSON-CLIP EP Package |
Texas Instruments | VSON-CLIP (DNK)-8 | 3~7 Days | 7,892.00 | ||
| CSD18536KTTT |
Trans MOSFET N-CH Si 60V 200A 4-Pin(3+Tab) DDPAK T/R |
Texas Instruments | DDPAK/TO-263-3 | ACTIVE | 3~7 Days | 7,858.00 | |
| CSD18510KTT |
40-V, N channel NexFET™ power MOSFET, single D2PAK, 1.7 mOhm 3-DDPAK/TO-263 -55 to 175 |
Texas Instruments | DDPAK/TO-263-3 | 3~7 Days | 7,478.00 | ||
| CSD18540Q5BT |
MOSFET 60V Power N-Channel NexFET |
Texas Instruments | VSONCLIP-8 | ACTIVE | 3~7 Days | 3,514.00 | |
| CSD18535KCS |
60-V, N channel NexFET™ power MOSFET, single TO-220, 2 mOhm 3-TO-220 -55 to 175 |
Texas Instruments | TO-220-3 | 3~7 Days | 3,192.00 | ||
| CSD18542KCS |
60-V, N channel NexFET™ power MOSFET, single TO-220, 4 mOhm 3-TO-220 -55 to 175 |
Texas Instruments | TO-220-3 | 3~7 Days | 3,707.00 | ||
| CSD18502KCS |
40-V, N channel NexFET™ power MOSFET, single TO-220, 2.9 mOhm 3-TO-220 -55 to 175 |
Texas Instruments | TO-220-3 | 3~7 Days | 6,264.00 | ||
| CSD18534KCS |
60-V, N channel NexFET™ power MOSFET, single TO-220, 9.5 mOhm 3-TO-220 -55 to 175 |
Texas Instruments | TO-220-3 | 3~7 Days | 7,079.00 | ||
| CSD18533KCS |
60-V, N channel NexFET™ power MOSFET, single TO-220, 6.3 mOhm 3-TO-220 -55 to 175 |
Texas Instruments | TO-220-3 | 3~7 Days | 4,130.00 | ||
| CSD18504KCS |
40-V, N channel NexFET™ power MOSFET, single TO-220, 7 mOhm 3-TO-220 -55 to 175 |
Texas Instruments | TO-220-3 | 3~7 Days | 4,608.00 | ||
| CSD18531Q5AT |
Ideal for power conversion applications, this 60-V, 3.5-mΩ NexFET™ power MOSFET is designed to minimize power losses |
Texas Instruments | VSONP-8 | 3~7 Days | 2,079.00 | ||
| CSD18504Q5AT |
Product CSD18504Q5AT is a VSONP-8(4.9x5.8) MOSFETs compliant with ROHS standards |
Texas Instruments | VSONP (DQJ)-8 | 3~7 Days | 5,086.00 | ||
| CSD18503Q5A |
High-speed switching for efficient power managemen |
Texas Instruments | VSONP (DQJ)-8 | 3~7 Days | 2,143.00 | ||
| CSD18501Q5A |
Product CSD18501Q5A |
Texas Instruments | VSON8 | 3~7 Days | 3,795.00 | ||
| CSD18533Q5AT |
Trans MOSFET N-CH Si 60V 17A 8-Pin VSONP EP T/R |
Texas Instruments | VSONP-8 | ACTIVE | 3~7 Days | 7,738.00 | |
| CSD18533Q5A |
MOSFET 60V N-Chnl NexFET Pwr MSFT, CSD18533Q5 |
Texas Instruments | VSONP8 | 3~7 Days | 6,732.00 | ||
| CSD18563Q5A |
8SON package N-Channel MOSFET capable of handling 60V and 96A |
Texas Instruments | VSONP (DQJ)-8 | 3~7 Days | 7,301.00 |