Congratulations On Your Successful Submission
Submission Failure
Specification Comparison: DMN21D2UFB-7B vs DMN2300UFB4-7B vs DMN2029USD-13
Hide identical items
|
All
Part Number
|
|
|
|
|---|---|---|---|
| Manufacturer | DIODES | Diodes Incorporated | Diodes Incorporated |
| Package | 3-UFDFN | 3-XFDFN | SOIC-8 |
| Description | N-Channel MOSFET with a power rating of 20V and 0.76A in X1-DFN1006 form | Trans MOSFET N-CH 20V 1.3A 3-Pin X2-DFN T/R | Transistor MOSFET Array |
| Stock | 4913 | 5700 | 5483 |
| Technology | 20 V | MOSFET (Metal Oxide) | Si |
| Package / Case | 3-UFDFN | 3-XFDFN | SOIC-8 |
| Product Category | Transistors - FETs, MOSFETs - Single | MOSFET | |
| Series | DMN21 | DMN2029 | |
| Product Status | Active | Active | |
| FET Type | N-Channel | N-Channel | |
| Drain to Source Voltage (Vdss) | 20 V | 20 V | |
| Current - Continuous Drain (Id) @ 25°C | 760mA (Ta) | 1.3A (Ta) | |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V | 1.5V, 4.5V | |
| Rds On (Max) @ Id, Vgs | 990mOhm @ 100mA, 4.5V | 175mOhm @ 300mA, 4.5V | |
| Vgs(th) (Max) @ Id | 1V @ 250µA | 950mV @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 0.93 nC @ 10 V | 1.6 nC @ 4.5 V | |
| Vgs (Max) | ±12V | ±8V | |
| Input Capacitance (Ciss) (Max) @ Vds | 27.6 pF @ 16 V | 64.3 pF @ 25 V | |
| Power Dissipation (Max) | 380mW (Ta) | 500mW (Ta) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | Surface Mount | |
| Supplier Device Package | X1-DFN1006-3 | X2-DFN1006-3 | |
| Base Product Number | DMN21 | DMN2300 | |
| Packaging | Reel | ||
| Mounting-Style | Si | ||
| Package-Case | 760 mA | ||
| RoHS | Details | ||
| Mounting Style | SMD/SMT | ||
| Transistor Polarity | N-Channel | ||
| Number of Channels | 2 Channel | ||
| Vds - Drain-Source Breakdown Voltage | 20 V | ||
| Id - Continuous Drain Current | 5.8 A | ||
| Rds On - Drain-Source Resistance | 25 mOhms, 25 mOhms | ||
| Vgs - Gate-Source Voltage | - 8 V, + 8 V | ||
| Vgs th - Gate-Source Threshold Voltage | 1.5 V | ||
| Qg - Gate Charge | 10.4 nC | ||
| Minimum Operating Temperature | - 55 C | ||
| Maximum Operating Temperature | + 150 C | ||
| Pd - Power Dissipation | 1.2 W | ||
| Channel Mode | Enhancement | ||
| Brand | Diodes Incorporated | ||
| Configuration | Dual | ||
| Fall Time | 53.5 ns | ||
| Forward Transconductance - Min | 10 S | ||
| Product Type | MOSFET | ||
| Rise Time | 10.4 ns | ||
| Factory Pack Quantity | 2500 | ||
| Subcategory | MOSFETs | ||
| Transistor Type | 2 N-Channel | ||
| Typical Turn-Off Delay Time | 119.3 ns | ||
| Typical Turn-On Delay Time | 16.5 ns | ||
| Unit Weight | 0.026455 oz |
Part Number
Start with: DMN21
Part Number "DMN21" returned 18 results; all results matched and started with "DMN21".
| Part Number | Description | Brand | Package/Case | Lifecycle Status | Cargo cycle | In Stock | Operation |
|---|---|---|---|---|---|---|---|
| DMN2100UDM |
|
DIODES | SOT-26 | 3~7 Days | 42,000.00 | ||
| DMN2100UDM-7 |
|
DIODES | SOT-26-6 | 3~7 Days | 69,000.00 | ||
| DMN2100UDM-7-F |
|
DIODES | SOT26 | 3~7 Days | 13,025.00 | ||
| DMN2104L |
|
DIODES | SOT23 | 3~7 Days | 39,680.00 | ||
| DMN2104L-7 |
|
DIODES | SOT-23-3 | 3~7 Days | 69,000.00 | ||
| DMN2104L-7-F |
|
DIODES | SOT&872223 | 3~7 Days | 572,000.00 | ||
| DMN2105 |
|
DIODES | SOT23 | 3~7 Days | 2,466.00 | ||
| DMN2112SN |
|
ZETEX | SOT23 | 3~7 Days | 42,000.00 | ||
| DMN2112SN-7 |
|
DIODES | SC-59 | 3~7 Days | 4,265.00 | ||
| DMN2112SN-7-F |
|
DIODES | SOT23 | 3~7 Days | 46,000.00 | ||
| DMN2114SN |
|
DIODES | SC-59 | 3~7 Days | 572,000.00 | ||
| DMN2114SN-7 |
|
DIODES | SC-59 | 3~7 Days | 45,000.00 | ||
| DMN2114SN-7-F |
|
DIODES | SC-59 | 3~7 Days | 12,000.00 | ||
| DMN2170U |
|
DIODES | SOT-23 | 3~7 Days | 44.00 | ||
| DMN2170U-7 |
|
DIODES | SOT-23-3 | 3~7 Days | 18,320.00 | ||
| DMN2170U-7-F |
|
DIODES | SOT&872223 | 3~7 Days | 9,102.00 | ||
| DMN21D2UFB |
|
DIODES | 3~7 Days | 69,000.00 | |||
| DMN21D2UFB-7B |
|
DIODES | 3-UFDFN | 3~7 Days | 10,000.00 |