Specification Comparison: DMN2400UFB-7 vs DMN2300UFB4-7B vs DMN2029USD-13

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Part Number
Manufacturer DIODES Diodes Incorporated Diodes Incorporated
Package 3-XFDFN 3-XFDFN SOIC-8
Description Compact design for space-constrained electronic devices Trans MOSFET N-CH 20V 1.3A 3-Pin X2-DFN T/R Transistor MOSFET Array
Stock 7428 5700 5483
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) Si
Package / Case 3-UFDFN 3-XFDFN SOIC-8
Series - DMN2029
Product Status Active Active
FET Type N-Channel N-Channel
Drain to Source Voltage (Vdss) 20 V 20 V
Current - Continuous Drain (Id) @ 25°C 750mA (Ta) 1.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V 1.5V, 4.5V
Rds On (Max) @ Id, Vgs 550mOhm @ 600mA, 4.5V 175mOhm @ 300mA, 4.5V
Vgs(th) (Max) @ Id 900mV @ 250µA 950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs 0.5 nC @ 4.5 V 1.6 nC @ 4.5 V
Vgs (Max) ±12V ±8V
Input Capacitance (Ciss) (Max) @ Vds 36 pF @ 16 V 64.3 pF @ 25 V
Power Dissipation (Max) 470mW (Ta) 500mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package X1-DFN1006-3 X2-DFN1006-3
Base Product Number DMN2400 DMN2300
Category Discrete Semiconductor ProductsTransistorsFETs, MOSFETsSingle FETs, MOSFETs
Mfr Diodes Incorporated
FET Feature -
Product Category MOSFET
RoHS Details
Mounting Style SMD/SMT
Transistor Polarity N-Channel
Number of Channels 2 Channel
Vds - Drain-Source Breakdown Voltage 20 V
Id - Continuous Drain Current 5.8 A
Rds On - Drain-Source Resistance 25 mOhms, 25 mOhms
Vgs - Gate-Source Voltage - 8 V, + 8 V
Vgs th - Gate-Source Threshold Voltage 1.5 V
Qg - Gate Charge 10.4 nC
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C
Pd - Power Dissipation 1.2 W
Channel Mode Enhancement
Brand Diodes Incorporated
Configuration Dual
Fall Time 53.5 ns
Forward Transconductance - Min 10 S
Product Type MOSFET
Rise Time 10.4 ns
Factory Pack Quantity 2500
Subcategory MOSFETs
Transistor Type 2 N-Channel
Typical Turn-Off Delay Time 119.3 ns
Typical Turn-On Delay Time 16.5 ns
Unit Weight 0.026455 oz
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Part Number

Start with: DMN24

Part Number "DMN24" returned 18 results; all results matched and started with "DMN24".

Part Number Description Brand Package/Case Lifecycle Status Cargo cycle In Stock Operation
DMN2400UFB4

Tape and reel packaged N-channel MOSFET transistor rated for 20V and 0.75A current

Diodes Incorporated DFN-3 ACTIVE 3~7 Days 6,246.00
DMN2400UFB4-7

MOSFET MOSFET N-CHANNEL DFN DFN1006-H43 GREEN 3K

Diodes Incorporated X2-DFN1006-3 Obsolete 3~7 Days 7,770.00
DMN2400UV-7

Trans MOSFET N-CH 20V 1.33A 6-Pin SOT-563 T/R

Diodes Incorporated SOT563-6 ACTIVE 3~7 Days 6,932.00
DMN24H3D5L-7

Trans MOSFET N-CH 240V 0.48A 3-Pin SOT-23 T/R

Diodes Incorporated SOT23-3 ACTIVE 3~7 Days 6,604.00
DMN2451UFDQ-13

N-Channel Enhancement Mode MOSFET

Diodes Incorporated 3-PowerUDFN ACTIVE 3~7 Days 8,842.00
DMN2451UFB4Q-7R

Trans MOSFET N-CH 20V 1.3A Automotive AEC-Q101 T/R

Diodes Incorporated 3-XFDFN ACTIVE 3~7 Days 6,504.00
DMN2450UFB4Q-7B

N-Channel Enhancement Mode MOSFET

Diodes Incorporated X2-DFN ACTIVE 3~7 Days 7,575.00
DMN2400UFDQ-7

Trans MOSFET N-CH 20V 0.9A Automotive 3-Pin UDFN EP T/R

Diodes Incorporated UDFN EP OBSOLETE 3~7 Days 7,209.00
DMN2451UFB4Q-7B

Trans MOSFET N-CH 20V 1.3A Automotive AEC-Q101 3-Pin X2-DFN T/R

Diodes Incorporated X2-DFN ACTIVE 3~7 Days 8,230.00
DMN24H11DSQ-7

MOSFET MOSFET BVDSS: 101V-250V

Diodes Incorporated SOT23-3 Active 3~7 Days 5,323.00
DMN2400UFB4-7B

DIODES DFN-H4 3~7 Days 2,648.00
DMN2400UFB-7

DIODES 3-XFDFN 3~7 Days 48,000.00
DMN2400UFD-7

DIODES X1-DFN1212-3 3~7 Days 6,000.00
DMN2400UFDQ-13

DIODES DFN1212-3 3~7 Days 24,500.00
DMN2400UV

DIODS SOT-563 3~7 Days 29,300.00
DMN2400UV-13

DIODES SOT-563F 3~7 Days 60,000.00
DMN2400UV-7-F

DIODES SOT563 3~7 Days 42,500.00
DMN24H11DS-7

DIODES SOT23-3 3~7 Days 16,500.00