Congratulations On Your Successful Submission
Submission Failure
Specification Comparison: IMW120R060M1HXKSA1 vs AIMW120R045M1XKSA1 vs IMW120R140M1H
Hide identical items
|
All
Part Number
|
|
|
|
|---|---|---|---|
| Manufacturer | Infineon Technologies | Infineon | infineon |
| Package | TO-247-3 | PG-TO247-3 | TO-247-3 |
| Description | MOSFET Transistor SiC Unipolar 1.2kV | MOSFET SIC_DISCRETE | Power Field-Effect Transistor, Model IMW120R140M1H |
| Stock | 6942 | 5208 | 8410 |
| functionalPacking | TUBE | TUBE | |
| msl | NA | NA | |
| halogenFree | yes | yes | |
| customerInfo | STANDARD | STANDARD | |
| fgr | C01 | K24 | |
| productClassification | ASP | ASP | |
| productStatusInfo | active and preferred | active and preferred | |
| hfgr | C | J | |
| packageName | PG-TO247-3 | PG-TO247-3 | |
| pbFree | yes | yes | |
| moistureProtPack | NON DRY | NON DRY | |
| fourBlockPackageName | PG-TO247-3-41 | PG-TO247-3-41 | |
| rohsCompliant | yes | yes | |
| opn | IMW120R060M1HXKSA1 | AIMW120R045M1XKSA1 | |
| completelyPbFree | yes | yes | |
| sapMatnrSali | SP001808368 | SP002472666 | |
| addProductInfo | 45mOhm @VGS=15V, ID=20A, SC | ||
| Qualification | Industrial | ||
| ID max | 19.0 A | ||
| Mounting | THT | ||
| Operating Temperature max | 175.0 °C | ||
| Operating Temperature min | -55.0 °C | ||
| Ptot max | 94.0 W | ||
| Polarity | N | ||
| RthJA max | 62.0 K/W | ||
| RthJC max | 1.6 K/W | ||
| Tj max | 175.0 °C | ||
| VDS max | 1200.0 V |
Part Number
Start with: IMW12
Part Number "IMW12" returned 10 results; all results matched and started with "IMW12".
| Part Number | Description | Brand | Package/Case | Lifecycle Status | Cargo cycle | In Stock | Operation |
|---|---|---|---|---|---|---|---|
| IMW120R060M1H |
High-Power MOSFET IMW120R060M1H |
INFINEON | TO247 | 3~7 Days | 5,643.00 | ||
| IMW120R030M1H |
Power Field-Effect Transistor |
INFINEON | TO247 | 3~7 Days | 6,460.00 | ||
| IMW120R090M1H |
Field-Effect Power Transistor |
INFINEON | TO247 | 3~7 Days | 3,179.00 | ||
| IMW120R350M1H |
Streamline your IoT projects with this compact wireless module |
INFINEON | TO247 | 3~7 Days | 5,987.00 | ||
| IMW120R220M1H |
N-channel MOSFET with a voltage rating of 1200V, current rating of 13A, and on-resistance of 220mOhm in a TO247-3 package |
infineon | TO-247-3 | ACTIVE | 3~7 Days | 7,570.00 | |
| IMW120R045M1 |
This TO-247-3 N-channel MOSFET |
infineon | TO-247-3 | ACTIVE | 3~7 Days | 9,502.00 | |
| IMW120R045M1XKSA1 |
Power MOSFET transistor with N-channel configuration, featuring a 1.2kV voltage tolerance and 52A current capability in a TO-247 package |
Infineon Technologies | TO-247-3 | NRND | 3~7 Days | 8,627.00 | |
| IMW120R030M1HXKSA1 |
1200V 56A through-hole device |
Infineon Technologies | TO-247-3 | ACTIVE | 3~7 Days | 8,398.00 | |
| IMW120R014M1HXKSA1 |
MOSFET |
Infineon | PG-TO247-3 | Active | 3~7 Days | 5,658.00 | |
| IMW120R220M1HXKSA1 |
MOSFET SIC DISCRETE |
Infineon | TO-247-3 | Active | 3~7 Days | 6,186.00 |