Specification Comparison: IRFR9024PBF vs IRFU9024 vs IRFR9024

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Part Number
Manufacturer VISHAY Vishay Siliconix Vishay Siliconix
Package TO252 PAK TO-252
Description Power Field-Effect Transistor, 8.8A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, DPAK-3 Alternate to 844-IRFU9024PBF Power Field-Effect Transistor, 8.8A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3
Stock 7986 4523 6878
Pbfree Code Yes No
Rohs Code Yes No
Part Life Cycle Code Active Obsolete
Part Package Code TO-252AA TO-252
Pin Count 3 3
Reach Compliance Code not_compliant compliant
ECCN Code EAR99 EAR99
Case Connection DRAIN DRAIN
Configuration SINGLE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V 60 V
Drain Current-Max (ID) 8.8 A 8.8 A
Drain-source On Resistance-Max 0.28 Ω 0.28 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252AA TO-252
JESD-30 Code R-PSSO-G2 R-PSSO-G2
JESD-609 Code e3 e0
Number of Elements 1 1
Number of Terminals 2 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity/Channel Type P-CHANNEL P-CHANNEL
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Finish MATTE TIN TIN LEAD
Terminal Form GULL WING GULL WING
Terminal Position SINGLE SINGLE
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Factory Lead Time 63 Weeks
Drain Current-Max (Abs) (ID) 8.8 A
Moisture Sensitivity Level 1
Peak Reflow Temperature (Cel) 260
Power Dissipation-Max (Abs) 42 W
Time@Peak Reflow Temperature-Max (s) 10
Product Category FETs - Single
Mfr Vishay Siliconix
Series -
Product-Status Obsolete
FET-Type P-Channel
Technology 8.8A (Tc)
Drain-to-Source-Voltage-Vdss 4V @ 250µA
Current-Continuous-Drain-Id-25°C 19 nC @ 10 V
Drive-Voltage-Max-Rds-On-Min-Rds-On -
Rds-On-Max-Id-Vgs 2.5W (Ta) 42W (Tc)
Vgs-th-Max-Id -55°C ~ 150°C (TJ)
Gate-Charge-Qg-Max-Vgs TO-251-3 Short Leads IPak TO-251AA
Vgs-Max IRFU9
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 300 mJ
Pulsed Drain Current-Max (IDM) 35 A
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Part Number

Start with: IRFR9

Part Number "IRFR9" returned 21 results; all results matched and started with "IRFR9".

Part Number Description Brand Package/Case Lifecycle Status Cargo cycle In Stock Operation
IRFR9024NPBF

TO-252AA P-Channel MOSFET Transistor: IRFR9024NPBF

INFINEON TO252 3~7 Days 4,280.00
IRFR9010

MOSFET Transistor IRFR9010: P-Channel, TO-252 Package

IR PAK Discontinued 3~7 Days 4,775.00
IRFR9120

IRFR9120 product details, featuring a suggested alternative MOSFET 844-IRFR9120PBF

IR TO252 3~7 Days 6,754.00
IRFR9120PBF

Power Field-Effect Transistor, 5.6A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

Siliconix DPAK-3 3~7 Days 6,171.00
IRFR9310TRPBF

Trans MOSFET P-CH Si 400V 1.8A 3-Pin(2+Tab) DPAK T/R

Siliconix DPAK-3 Active 3~7 Days 6,031.00
IRFR9310

Power Field-Effect Transistor

vishay TO-252 3~7 Days 7,390.00
IRFR9220PBF

Featuring a P-MOSFET design, this transistor operates unipolarly at -200 volts and -2

Vishay DPAK-3 (TO-252-3) Active 3~7 Days 5,116.00
IRFR9220

Power Field-Effect Transistor, 3.6A I(D), 200V, 1.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3

IR TO252 3~7 Days 4,209.00
IRFR9210

Power Field-Effect Transistor, 1.9A I(D), 200V, 3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3

STMicroelectronics SOT 3~7 Days 5,909.00
IRFR9014

Power Field-Effect Transistor, 5.1A I(D), 60V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3

IR TO252 3~7 Days 4,910.00
IRFR9214

Power Field-Effect Transistor, 2.7A I(D), 250V, 3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3

IOR SOT 3~7 Days 4,823.00
IRFR9110PBF

IRFR9110PBF is a P-channel MOSFET transistor with a rating of 3.1 A and 100 V, featuring a 3-pin D-PAK package

Vishay DPAK-3 (TO-252-3) Active 3~7 Days 3,572.00
IRFR9110

Power Field-Effect Transistor with 3.1A current rating, 100V voltage capacity, and 1.2ohm resistance

Vishay DPAK-3 (TO-252-3) 3~7 Days 5,471.00
IRFR9020

Power Field-Effect Transistor, 9.9A I(D), 50V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3

IR TO252 3~7 Days 7,453.00
IRFR9024NTRPBF

Featuring a P-Channel Silicon MOSFET construction

Infineon DPAK 3~7 Days 3,418.00
IRFR9024NTRLPBF

P-Channel MOSFET with 55V Voltage Rating and 11A Current Rating in DPAK Package

Infineon Technologies DPAK-3 ACTIVE 3~7 Days 4,826.00
IRFR9120NPBF

TO-252 package MOSFET with 480mΩ on-resistance at 3.9A and 10V

Infineon Technologies TO252-3 3~7 Days 7,157.00
IRFR9120N

TO-252 MOSFETs ROHS certified, featuring IRFR9120N

INFINEON TO-252 3~7 Days 6,206.00
IRFR9120TRPBF

Trans MOSFET P-CH 100V 5.6A 3-Pin(2+Tab) DPAK T/R

Siliconix DPAK-3 ACTIVE 3~7 Days 8,611.00
IRFR9220TRPBF

Trans MOSFET P-CH 200V 3.6A 3-Pin(2+Tab) DPAK T/R

Siliconix DPAK-3 ACTIVE 3~7 Days 7,969.00
IRFR9210TRPBF

Vishay IRFR9210TRPBF P-channel MOSFET Transistor, 1.9 A, -200 V, 3-Pin TO-252

Vishay Siliconix TO-252-3,DPAK(2Leads+Tab),SC-63 ACTIVE 3~7 Days 7,363.00