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Specification Comparison: IRFR9120PBF vs IRFR9120N vs IRFR9120NPBF
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| Manufacturer | Siliconix | INFINEON | Infineon Technologies |
| Package | DPAK-3 | TO-252 | TO252-3 |
| Description | Power Field-Effect Transistor, 5.6A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | TO-252 MOSFETs ROHS certified, featuring IRFR9120N | TO-252 package MOSFET with 480mΩ on-resistance at 3.9A and 10V |
| Stock | 6171 | 6206 | 7157 |
| Product Category | MOSFET | MOSFET | |
| RoHS | Details | Details | |
| Technology | Si | Si | |
| Mounting Style | SMD/SMT | SMD/SMT | |
| Package / Case | DPAK-3 (TO-252-3) | TO-252-3 | |
| Transistor Polarity | P-Channel | P-Channel | |
| Number of Channels | 1 Channel | 1 Channel | |
| Vds - Drain-Source Breakdown Voltage | 100 V | 100 V | |
| Id - Continuous Drain Current | 5.6 A | 6.6 A | |
| Rds On - Drain-Source Resistance | 600 mOhms | 480 mOhms | |
| Vgs - Gate-Source Voltage | - 20 V, + 20 V | - 20 V, + 20 V | |
| Vgs th - Gate-Source Threshold Voltage | 4 V | 4 V | |
| Qg - Gate Charge | 18 nC | 18 nC | |
| Minimum Operating Temperature | - 55 C | - 55 C | |
| Maximum Operating Temperature | + 150 C | + 150 C | |
| Pd - Power Dissipation | 42 W | 40 W | |
| Channel Mode | Enhancement | Enhancement | |
| Brand | Vishay Semiconductors | Infineon Technologies | |
| Configuration | Single | Single | |
| Product Type | MOSFET | MOSFET | |
| Factory Pack Quantity | 3000 | 3000 | |
| Subcategory | MOSFETs | MOSFETs | |
| Unit Weight | 0.011640 oz | 0.011640 oz | |
| REACH | Details | ||
| Series | IRFR | ||
| Moisture Sensitivity Level | 1 | ||
| Ptot max | 39.0 W | ||
| RthJC max | 3.2 K/W | ||
| VDS max | -100.0 V | ||
| Mounting | SMD | ||
| Polarity | P | ||
| Tj max | 150.0 °C | ||
| VGS max | 20.0 V | ||
| RDS (on) max | 480.0 mΩ | ||
| VGS(th) max | -4.0 V | ||
| VGS(th) min | -2.0 V | ||
| ID max | -6.6 A | ||
| Fall Time | 31 ns | ||
| Forward Transconductance - Min | 1.4 S | ||
| Height | 2.3 mm | ||
| Length | 6.5 mm | ||
| Rise Time | 47 ns | ||
| Transistor Type | 1 P-Channel | ||
| Type | Preliminary | ||
| Typical Turn-Off Delay Time | 28 ns | ||
| Typical Turn-On Delay Time | 14 ns | ||
| Width | 6.22 mm | ||
| Part # Aliases | SP001578344 |
Part Number
Start with: IRFR9
Part Number "IRFR9" returned 20 results; all results matched and started with "IRFR9".
| Part Number | Description | Brand | Package/Case | Lifecycle Status | Cargo cycle | In Stock | Operation |
|---|---|---|---|---|---|---|---|
| IRFR9024NPBF |
TO-252AA P-Channel MOSFET Transistor: IRFR9024NPBF |
INFINEON | TO252 | 3~7 Days | 4,280.00 | ||
| IRFR9010 |
MOSFET Transistor IRFR9010: P-Channel, TO-252 Package |
IR | PAK | Discontinued | 3~7 Days | 4,775.00 | |
| IRFR9120 |
IRFR9120 product details, featuring a suggested alternative MOSFET 844-IRFR9120PBF |
IR | TO252 | 3~7 Days | 6,754.00 | ||
| IRFR9310TRPBF |
Trans MOSFET P-CH Si 400V 1.8A 3-Pin(2+Tab) DPAK T/R |
Siliconix | DPAK-3 | Active | 3~7 Days | 6,031.00 | |
| IRFR9310 |
Power Field-Effect Transistor |
vishay | TO-252 | 3~7 Days | 7,390.00 | ||
| IRFR9220PBF |
Featuring a P-MOSFET design, this transistor operates unipolarly at -200 volts and -2 |
Vishay | DPAK-3 (TO-252-3) | Active | 3~7 Days | 5,116.00 | |
| IRFR9220 |
Power Field-Effect Transistor, 3.6A I(D), 200V, 1.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 |
IR | TO252 | 3~7 Days | 4,209.00 | ||
| IRFR9210 |
Power Field-Effect Transistor, 1.9A I(D), 200V, 3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 |
STMicroelectronics | SOT | 3~7 Days | 5,909.00 | ||
| IRFR9014 |
Power Field-Effect Transistor, 5.1A I(D), 60V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 |
IR | TO252 | 3~7 Days | 4,910.00 | ||
| IRFR9214 |
Power Field-Effect Transistor, 2.7A I(D), 250V, 3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 |
IOR | SOT | 3~7 Days | 4,823.00 | ||
| IRFR9110PBF |
IRFR9110PBF is a P-channel MOSFET transistor with a rating of 3.1 A and 100 V, featuring a 3-pin D-PAK package |
Vishay | DPAK-3 (TO-252-3) | Active | 3~7 Days | 3,572.00 | |
| IRFR9110 |
Power Field-Effect Transistor with 3.1A current rating, 100V voltage capacity, and 1.2ohm resistance |
Vishay | DPAK-3 (TO-252-3) | 3~7 Days | 5,471.00 | ||
| IRFR9024 |
Power Field-Effect Transistor, 8.8A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 |
Vishay Siliconix | TO-252 | 3~7 Days | 6,878.00 | ||
| IRFR9024PBF |
Power Field-Effect Transistor, 8.8A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, DPAK-3 |
VISHAY | TO252 | 3~7 Days | 7,986.00 | ||
| IRFR9020 |
Power Field-Effect Transistor, 9.9A I(D), 50V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 |
IR | TO252 | 3~7 Days | 7,453.00 | ||
| IRFR9024NTRPBF |
Featuring a P-Channel Silicon MOSFET construction |
Infineon | DPAK | 3~7 Days | 3,418.00 | ||
| IRFR9024NTRLPBF |
P-Channel MOSFET with 55V Voltage Rating and 11A Current Rating in DPAK Package |
Infineon Technologies | DPAK-3 | ACTIVE | 3~7 Days | 4,826.00 | |
| IRFR9120TRPBF |
Trans MOSFET P-CH 100V 5.6A 3-Pin(2+Tab) DPAK T/R |
Siliconix | DPAK-3 | ACTIVE | 3~7 Days | 8,611.00 | |
| IRFR9220TRPBF |
Trans MOSFET P-CH 200V 3.6A 3-Pin(2+Tab) DPAK T/R |
Siliconix | DPAK-3 | ACTIVE | 3~7 Days | 7,969.00 | |
| IRFR9210TRPBF |
Vishay IRFR9210TRPBF P-channel MOSFET Transistor, 1.9 A, -200 V, 3-Pin TO-252 |
Vishay Siliconix | TO-252-3,DPAK(2Leads+Tab),SC-63 | ACTIVE | 3~7 Days | 7,363.00 |