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Specification Comparison: IRFR9120PBF vs IRFU9120 vs IRFR9120
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| Manufacturer | Siliconix | IR | IR |
| Package | DPAK-3 | PAK | TO252 |
| Description | Power Field-Effect Transistor, 5.6A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | The IRFU9120PBF is a third generation P-channel enhancement-mode Power MOSFET comes with the best combination of fast switching, ruggedized device design and low ON-resistance. The straight lead version is for through-hole mounting applications. Power dissipation levels up to 1.5W are possible in typical surface-mount applications. | IRFR9120 product details, featuring a suggested alternative MOSFET 844-IRFR9120PBF |
| Stock | 6171 | 4354 | 6754 |
| Product Category | MOSFET | FETs - Single | FETs - Single |
| Technology | Si | ±20V | ±20V |
| Series | IRFR | - | - |
| Categories | Transistors - FETs, MOSFETs - Single | Transistors - FETs, MOSFETs - Single | |
| Packaging | Tube | Tube | |
| Part-Status | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | |
| FET-Type | 10V | 10V | |
| Drain-to-Source-Voltage-Vdss | 2.5W (Ta), 42W (Tc) | 2.5W (Ta), 42W (Tc) | |
| Current-Continuous-Drain-Id-25°C | 600 mOhm @ 3.4A, 10V | 600 mOhm @ 3.4A, 10V | |
| Drive-Voltage-Max-Rds-On-Min-Rds-On | TO-251AA | D-Pak | |
| Vgs-th-Max-Id | TO-251-3 Short Leads, IPak, TO-251AA | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| RoHS | Details | ||
| REACH | Details | ||
| Mounting Style | SMD/SMT | ||
| Package / Case | DPAK-3 (TO-252-3) | ||
| Transistor Polarity | P-Channel | ||
| Number of Channels | 1 Channel | ||
| Vds - Drain-Source Breakdown Voltage | 100 V | ||
| Id - Continuous Drain Current | 5.6 A | ||
| Rds On - Drain-Source Resistance | 600 mOhms | ||
| Vgs - Gate-Source Voltage | - 20 V, + 20 V | ||
| Vgs th - Gate-Source Threshold Voltage | 4 V | ||
| Qg - Gate Charge | 18 nC | ||
| Minimum Operating Temperature | - 55 C | ||
| Maximum Operating Temperature | + 150 C | ||
| Pd - Power Dissipation | 42 W | ||
| Channel Mode | Enhancement | ||
| Brand | Vishay Semiconductors | ||
| Configuration | Single | ||
| Product Type | MOSFET | ||
| Factory Pack Quantity | 3000 | ||
| Subcategory | MOSFETs | ||
| Unit Weight | 0.011640 oz |
Part Number
Start with: IRFR9
Part Number "IRFR9" returned 21 results; all results matched and started with "IRFR9".
| Part Number | Description | Brand | Package/Case | Lifecycle Status | Cargo cycle | In Stock | Operation |
|---|---|---|---|---|---|---|---|
| IRFR9024NPBF |
TO-252AA P-Channel MOSFET Transistor: IRFR9024NPBF |
INFINEON | TO252 | 3~7 Days | 4,280.00 | ||
| IRFR9010 |
MOSFET Transistor IRFR9010: P-Channel, TO-252 Package |
IR | PAK | Discontinued | 3~7 Days | 4,775.00 | |
| IRFR9310TRPBF |
Trans MOSFET P-CH Si 400V 1.8A 3-Pin(2+Tab) DPAK T/R |
Siliconix | DPAK-3 | Active | 3~7 Days | 6,031.00 | |
| IRFR9310 |
Power Field-Effect Transistor |
vishay | TO-252 | 3~7 Days | 7,390.00 | ||
| IRFR9220PBF |
Featuring a P-MOSFET design, this transistor operates unipolarly at -200 volts and -2 |
Vishay | DPAK-3 (TO-252-3) | Active | 3~7 Days | 5,116.00 | |
| IRFR9220 |
Power Field-Effect Transistor, 3.6A I(D), 200V, 1.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 |
IR | TO252 | 3~7 Days | 4,209.00 | ||
| IRFR9210 |
Power Field-Effect Transistor, 1.9A I(D), 200V, 3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 |
STMicroelectronics | SOT | 3~7 Days | 5,909.00 | ||
| IRFR9014 |
Power Field-Effect Transistor, 5.1A I(D), 60V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 |
IR | TO252 | 3~7 Days | 4,910.00 | ||
| IRFR9214 |
Power Field-Effect Transistor, 2.7A I(D), 250V, 3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 |
IOR | SOT | 3~7 Days | 4,823.00 | ||
| IRFR9110PBF |
IRFR9110PBF is a P-channel MOSFET transistor with a rating of 3.1 A and 100 V, featuring a 3-pin D-PAK package |
Vishay | DPAK-3 (TO-252-3) | Active | 3~7 Days | 3,572.00 | |
| IRFR9110 |
Power Field-Effect Transistor with 3.1A current rating, 100V voltage capacity, and 1.2ohm resistance |
Vishay | DPAK-3 (TO-252-3) | 3~7 Days | 5,471.00 | ||
| IRFR9024 |
Power Field-Effect Transistor, 8.8A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 |
Vishay Siliconix | TO-252 | 3~7 Days | 6,878.00 | ||
| IRFR9024PBF |
Power Field-Effect Transistor, 8.8A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, DPAK-3 |
VISHAY | TO252 | 3~7 Days | 7,986.00 | ||
| IRFR9020 |
Power Field-Effect Transistor, 9.9A I(D), 50V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 |
IR | TO252 | 3~7 Days | 7,453.00 | ||
| IRFR9024NTRPBF |
Featuring a P-Channel Silicon MOSFET construction |
Infineon | DPAK | 3~7 Days | 3,418.00 | ||
| IRFR9024NTRLPBF |
P-Channel MOSFET with 55V Voltage Rating and 11A Current Rating in DPAK Package |
Infineon Technologies | DPAK-3 | ACTIVE | 3~7 Days | 4,826.00 | |
| IRFR9120NPBF |
TO-252 package MOSFET with 480mΩ on-resistance at 3.9A and 10V |
Infineon Technologies | TO252-3 | 3~7 Days | 7,157.00 | ||
| IRFR9120N |
TO-252 MOSFETs ROHS certified, featuring IRFR9120N |
INFINEON | TO-252 | 3~7 Days | 6,206.00 | ||
| IRFR9120TRPBF |
Trans MOSFET P-CH 100V 5.6A 3-Pin(2+Tab) DPAK T/R |
Siliconix | DPAK-3 | ACTIVE | 3~7 Days | 8,611.00 | |
| IRFR9220TRPBF |
Trans MOSFET P-CH 200V 3.6A 3-Pin(2+Tab) DPAK T/R |
Siliconix | DPAK-3 | ACTIVE | 3~7 Days | 7,969.00 | |
| IRFR9210TRPBF |
Vishay IRFR9210TRPBF P-channel MOSFET Transistor, 1.9 A, -200 V, 3-Pin TO-252 |
Vishay Siliconix | TO-252-3,DPAK(2Leads+Tab),SC-63 | ACTIVE | 3~7 Days | 7,363.00 |