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Specification Comparison: IS42S16160J-7BLI vs IS42S16160J-6BLI vs IS42S16320F-6BLI
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| Manufacturer | Issi, Integrated Silicon Solution Inc | Issi, Integrated Silicon Solution Inc | ISSI |
| Package | BGA-54 | BGA-54 | 54-TFBGA |
| Description | SDR SDRAM module featuring a 16 megabit by 16 design | 4-Terminal Fine Pitch Ball Grid Array | IS42S16320F-6BLI |
| Stock | 5210 | 3441 | 5416 |
| Package / Case | BGA-54 | BGA-54 | 54-TFBGA |
| Organization | 1 M x 16 | 16 M x 16 | 32MX16 |
| Memory Size | 16 Mbit | 256 Mbit | 512Mbit |
| Access Time | 6 ns | 6 ns | 5.4 ns |
| Product Category | DRAM | DRAM | |
| RoHS | Details | Details | |
| Type | SDRAM | SDRAM | |
| Mounting Style | SMD/SMT | SMD/SMT | |
| Data Bus Width | 16 bit | 16 bit | |
| Maximum Clock Frequency | 143 MHz | 166 MHz | |
| Supply Voltage - Max | 3.6 V | 3.6 V | |
| Supply Voltage - Min | 3 V | 3 V | |
| Supply Current - Max | 50 mA | 55 mA | |
| Minimum Operating Temperature | - 40 C | - 40 C | |
| Maximum Operating Temperature | + 85 C | + 85 C | |
| Series | IS42S16160J | IS42S16160J | |
| Brand | ISSI | ISSI | |
| Moisture Sensitive | Yes | Yes | |
| Product Type | DRAM | DRAM | |
| Factory Pack Quantity | 348 | 348 | |
| Subcategory | Memory & Data Storage | Memory & Data Storage | |
| Unit Weight | 0.004303 oz | 0.004303 oz | |
| Rohs Code | Yes | ||
| Part Life Cycle Code | Active | ||
| Reach Compliance Code | compliant | ||
| ECCN Code | EAR99 | ||
| HTS Code | 8542.32.00.28 | ||
| Factory Lead Time | 20 Weeks | ||
| Access Mode | FOUR BANK PAGE BURST | ||
| Access Time-Max | 5.4 ns | ||
| Additional Feature | PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH | ||
| Clock Frequency-Max (fCLK) | 166 MHz | ||
| I/O Type | COMMON | ||
| Interleaved Burst Length | 1,2,4,8 | ||
| JESD-30 Code | R-PBGA-B54 | ||
| Length | 13 mm | ||
| Memory Density | 536870912 bit | ||
| Memory IC Type | SYNCHRONOUS DRAM | ||
| Memory Width | 16 | ||
| Number of Functions | 1 | ||
| Number of Ports | 1 | ||
| Number of Terminals | 54 | ||
| Number of Words | 33554432 words | ||
| Number of Words Code | 32000000 | ||
| Operating Mode | SYNCHRONOUS | ||
| Operating Temperature-Max | 85 °C | ||
| Operating Temperature-Min | -40 °C | ||
| Output Characteristics | 3-STATE | ||
| Package Body Material | PLASTIC/EPOXY | ||
| Package Code | TFBGA | ||
| Package Equivalence Code | BGA54,9X9,32 | ||
| Package Shape | RECTANGULAR | ||
| Package Style | GRID ARRAY, THIN PROFILE, FINE PITCH | ||
| Power Supplies | 3.3 V | ||
| Qualification Status | Not Qualified | ||
| Refresh Cycles | 8192 | ||
| Seated Height-Max | 1.2 mm | ||
| Self Refresh | YES | ||
| Sequential Burst Length | 1,2,4,8,FP | ||
| Standby Current-Max | 0.004 A | ||
| Supply Current-Max | 0.18 mA | ||
| Supply Voltage-Max (Vsup) | 3.6 V | ||
| Supply Voltage-Min (Vsup) | 3 V | ||
| Supply Voltage-Nom (Vsup) | 3.3 V | ||
| Surface Mount | YES | ||
| Technology | CMOS | ||
| Temperature Grade | INDUSTRIAL | ||
| Terminal Form | BALL | ||
| Terminal Pitch | 0.8 mm | ||
| Terminal Position | BOTTOM | ||
| Width | 8 mm | ||
| Product Status | Active | ||
| Programmable | Not Verified | ||
| Memory Type | Volatile | ||
| Memory Format | DRAM | ||
| Memory Organization | 32M x 16 | ||
| Memory Interface | Parallel | ||
| Clock Frequency | 167 MHz | ||
| Voltage - Supply | 3V ~ 3.6V | ||
| Operating Temperature | -40°C ~ 85°C (TA) | ||
| Mounting Type | Surface Mount | ||
| Supplier Device Package | 54-TW-BGA (8x13) | ||
| Base Product Number | IS42S16320 |
Part Number
Start with: IS42S
Part Number "IS42S" returned 22 results; all results matched and started with "IS42S".
| Part Number | Description | Brand | Package/Case | Lifecycle Status | Cargo cycle | In Stock | Operation |
|---|---|---|---|---|---|---|---|
| IS42S32800D-7TL |
CMOS Synchronous DRAM featuring 8MX32 capacity, 5.4ns speed, PDSO86 package |
Issi | TSOP-86 | 3~7 Days | 7,146.00 | ||
| IS42S32400B-7TL |
Low-power CMOS technology |
Issi | TFSOP-86 | 3~7 Days | 6,471.00 | ||
| IS42S16800E-7TLI |
TSOP2-54 package for easy installation and versatility |
Issi | TSOP-54 | 3~7 Days | 4,794.00 | ||
| IS42S16800E-7TL |
High-speed 128 Megabit Synchronous Dynamic Random-Access Memory, operating at 143 Megahertz and requiring 3.3 Volts |
Issi, Integrated Silicon Solution Inc | TSOP-54 | 3~7 Days | 3,999.00 | ||
| IS42S32160C-75BLI |
The IS42S32160C-75BLI is a dynamic random-access memory (DRAM) chip that offers a high capacity of 512Mbit |
Issi, Integrated Silicon Solution Inc | BGA-90 | 3~7 Days | 5,901.00 | ||
| IS42S16400F-7BL |
Synchronous memory module with a capacity of 4 megabytes by 16 bits, operating at a speed of 5 |
Issi | BGA-54 | 3~7 Days | 7,153.00 | ||
| IS42S16320D-7TLI |
Electronic components distributor operating from France since 1988 |
Issi | TSOP-54 | NRND | 3~7 Days | 8,597.00 | |
| IS42S16160J-6TL |
Low power consumption, ideal for efficient operation |
Issi, Integrated Silicon Solution Inc | TSOP-54 | ACTIVE | 3~7 Days | 6,234.00 | |
| IS42S32400E-7TLI |
Synchronous DRAM with 4MX32 memory size and 5.4ns speed, CMOS technology, lead-free, TSOP2-86 package |
ISSI | TSOP-86 | 3~7 Days | 4,345.00 | ||
| IS42S16160D-7TL |
IS42S16160D-7TL is a 256Mbit SDRAM Memory with a 143MHz speed, designed for surface mount installation |
ISSI | TSOP-54 | Discontinued | 3~7 Days | 6,613.00 | |
| IS42S16400F-7TL |
4M X 16 Synchronous DRAM |
ISSI | TSOP-50 | Discontinued | 3~7 Days | 5,324.00 | |
| IS42S16160D-7TLI |
Operating temperature range -40 to +85 °C |
Issi, Integrated Silicon Solution Inc | TSOP-54 | 3~7 Days | 6,179.00 | ||
| IS42S32200E-6TL |
TSOP2-86 Synchronous DRAM, 2MX32, 5.5ns, CMOS, PDSO86, 0.400 INCH, LEAD FREE |
ISSI | TSOP-86 | 3~7 Days | 5,640.00 | ||
| IS42S16100E-7TLI |
Package type: TSOP |
Issi, Integrated Silicon Solution Inc | TSOP-50 | 3~7 Days | 5,565.00 | ||
| IS42S16160B-7TLI |
Cutting-edge Dynamic Random Access Memory unit capable of storing 256 million bytes of data |
ISSI | TSOP-54 | 3~7 Days | 7,242.00 | ||
| IS42S32160B-7TL |
512 megabyte SDR SDRAM |
Issi, Integrated Silicon Solution Inc | TSOP-86 | 3~7 Days | 3,138.00 | ||
| IS42S16160B-7TL |
DRAM 256M memory module with a voltage rating of 3.3 volts |
ISSI, Integrated Silicon Solution Inc | 54-TSOP(0.400",10.16mmWidth) | OBSOLETE | 3~7 Days | 5,441.00 | |
| IS42S16320B-7BL |
6ns Synchronous DRAM offering a capacity of 32MX16, implemented in CMOS technology and featuring a PBGA54 package size of 11 by 13 mm with a 0 |
ISSI | WBGA-54 | 3~7 Days | 7,235.00 | ||
| IS42S16400F-6TL |
Boasting a generous storage capacity of 64 megabytes |
ISSI | TSOP-50 | 3~7 Days | 5,869.00 | ||
| IS42S16400A-7T |
Fast 6ns memory module |
ISSI | TSOP-54 | 3~7 Days | 5,372.00 | ||
| IS42S32200E-7TLI |
64M 2Mx32 memory module |
Issi, Integrated Silicon Solution Inc | SOP-86 | 3~7 Days | 6,086.00 | ||
| IS42S32200E-7TL |
Lead free, TSOP2-86, 0.400 inch |
ISSI | TSOP-86 | 3~7 Days | 3,059.00 |