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Specification Comparison: IS42S16160J-7TLI-TR vs IS42S16320F-7TL-TR vs IS42S16160D-7TL
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| Manufacturer | Issi | Issi | ISSI |
| Package | TSOP-54 | TSOP-54 | TSOP-54 |
| Description | High-performance DRAM for fast processing and memory-intensive applications | ISS-L-TR is a reliable and high-quality DRAM component suitable for a wide range of industrial, consumer, and automotive application | IS42S16160D-7TL is a 256Mbit SDRAM Memory with a 143MHz speed, designed for surface mount installation |
| Stock | 2407 | 4000 | 6613 |
| Product Category | DRAM | DRAM | Memory ICs |
| Series | IS42S16160J | IS42S16320F | - |
| RoHS | Details | Details | |
| Type | SDRAM | SDRAM | |
| Mounting Style | SMD/SMT | SMD/SMT | |
| Package / Case | TSOP-54 | TSOP-54 | |
| Data Bus Width | 16 bit | 16 bit | |
| Organization | 1 M x 16 | 32 M x 16 | |
| Memory Size | 16 Mbit | 512 Mbit | |
| Maximum Clock Frequency | 143 MHz | 143 MHz | |
| Access Time | 6 ns | 5.4 ns | |
| Supply Voltage - Max | 3.6 V | 3.6 V | |
| Supply Voltage - Min | 3 V | 3 V | |
| Supply Current - Max | 50 mA | 110 mA | |
| Minimum Operating Temperature | - 40 C | 0 C | |
| Maximum Operating Temperature | + 85 C | + 70 C | |
| Brand | ISSI | ISSI | |
| Moisture Sensitive | Yes | Yes | |
| Product Type | DRAM | DRAM | |
| Factory Pack Quantity | 1500 | 1500 | |
| Subcategory | Memory & Data Storage | Memory & Data Storage | |
| Packaging | Tray | ||
| Package-Case | Parallel | ||
| Operating-Temperature | 3 V ~ 3.6 V | ||
| Interface | SDRAM | ||
| Voltage-Supply | 143MHz |
Part Number
Start with: IS42S
Part Number "IS42S" returned 22 results; all results matched and started with "IS42S".
| Part Number | Description | Brand | Package/Case | Lifecycle Status | Cargo cycle | In Stock | Operation |
|---|---|---|---|---|---|---|---|
| IS42S32800D-7TL |
CMOS Synchronous DRAM featuring 8MX32 capacity, 5.4ns speed, PDSO86 package |
Issi | TSOP-86 | 3~7 Days | 7,146.00 | ||
| IS42S32400B-7TL |
Low-power CMOS technology |
Issi | TFSOP-86 | 3~7 Days | 6,471.00 | ||
| IS42S16800E-7TLI |
TSOP2-54 package for easy installation and versatility |
Issi | TSOP-54 | 3~7 Days | 4,794.00 | ||
| IS42S16800E-7TL |
High-speed 128 Megabit Synchronous Dynamic Random-Access Memory, operating at 143 Megahertz and requiring 3.3 Volts |
Issi, Integrated Silicon Solution Inc | TSOP-54 | 3~7 Days | 3,999.00 | ||
| IS42S32160C-75BLI |
The IS42S32160C-75BLI is a dynamic random-access memory (DRAM) chip that offers a high capacity of 512Mbit |
Issi, Integrated Silicon Solution Inc | BGA-90 | 3~7 Days | 5,901.00 | ||
| IS42S16160J-6BLI |
4-Terminal Fine Pitch Ball Grid Array |
Issi, Integrated Silicon Solution Inc | BGA-54 | 3~7 Days | 3,441.00 | ||
| IS42S16400F-7BL |
Synchronous memory module with a capacity of 4 megabytes by 16 bits, operating at a speed of 5 |
Issi | BGA-54 | 3~7 Days | 7,153.00 | ||
| IS42S16320D-7TLI |
Electronic components distributor operating from France since 1988 |
Issi | TSOP-54 | NRND | 3~7 Days | 8,597.00 | |
| IS42S16160J-6TL |
Low power consumption, ideal for efficient operation |
Issi, Integrated Silicon Solution Inc | TSOP-54 | ACTIVE | 3~7 Days | 6,234.00 | |
| IS42S32400E-7TLI |
Synchronous DRAM with 4MX32 memory size and 5.4ns speed, CMOS technology, lead-free, TSOP2-86 package |
ISSI | TSOP-86 | 3~7 Days | 4,345.00 | ||
| IS42S16400F-7TL |
4M X 16 Synchronous DRAM |
ISSI | TSOP-50 | Discontinued | 3~7 Days | 5,324.00 | |
| IS42S16160D-7TLI |
Operating temperature range -40 to +85 °C |
Issi, Integrated Silicon Solution Inc | TSOP-54 | 3~7 Days | 6,179.00 | ||
| IS42S32200E-6TL |
TSOP2-86 Synchronous DRAM, 2MX32, 5.5ns, CMOS, PDSO86, 0.400 INCH, LEAD FREE |
ISSI | TSOP-86 | 3~7 Days | 5,640.00 | ||
| IS42S16100E-7TLI |
Package type: TSOP |
Issi, Integrated Silicon Solution Inc | TSOP-50 | 3~7 Days | 5,565.00 | ||
| IS42S16160B-7TLI |
Cutting-edge Dynamic Random Access Memory unit capable of storing 256 million bytes of data |
ISSI | TSOP-54 | 3~7 Days | 7,242.00 | ||
| IS42S32160B-7TL |
512 megabyte SDR SDRAM |
Issi, Integrated Silicon Solution Inc | TSOP-86 | 3~7 Days | 3,138.00 | ||
| IS42S16160B-7TL |
DRAM 256M memory module with a voltage rating of 3.3 volts |
ISSI, Integrated Silicon Solution Inc | 54-TSOP(0.400",10.16mmWidth) | OBSOLETE | 3~7 Days | 5,441.00 | |
| IS42S16320B-7BL |
6ns Synchronous DRAM offering a capacity of 32MX16, implemented in CMOS technology and featuring a PBGA54 package size of 11 by 13 mm with a 0 |
ISSI | WBGA-54 | 3~7 Days | 7,235.00 | ||
| IS42S16400F-6TL |
Boasting a generous storage capacity of 64 megabytes |
ISSI | TSOP-50 | 3~7 Days | 5,869.00 | ||
| IS42S16400A-7T |
Fast 6ns memory module |
ISSI | TSOP-54 | 3~7 Days | 5,372.00 | ||
| IS42S32200E-7TLI |
64M 2Mx32 memory module |
Issi, Integrated Silicon Solution Inc | SOP-86 | 3~7 Days | 6,086.00 | ||
| IS42S32200E-7TL |
Lead free, TSOP2-86, 0.400 inch |
ISSI | TSOP-86 | 3~7 Days | 3,059.00 |