Specification Comparison: JANTX1N914 vs JANTX1N649-1 vs JANTX1N751A-1
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Part Number
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Manufacturer | MICROSEMI | Microchip Technology | Microchip Technology |
Package | DO-35 | DO-35 | DO35-2 |
Description | 75V 0.2A 5ns 2-Pin DO-35 Bag Rectifier Diode Switching | 0.15A rectifier diode made of silicon with 1 element | Zener Diodes Voltage Regulator product description JANTX1N751A-1 |
Stock | 6557 | 7870 | 6962 |
Package / Case | DO-204AH, DO-35, Axial | DO-35 | DO-35-2 |
Product Category | Diodes - General Purpose, Power, Switching | Rectifiers | Zener Diodes |
RoHS | N | N | N |
Brand | Microchip / Microsemi | Microchip / Microsemi | Microchip / Microsemi |
Product Type | Diodes - General Purpose, Power, Switching | Rectifiers | Zener Diodes |
Factory Pack Quantity | 1 | 1 | 1 |
Subcategory | Diodes & Rectifiers | Diodes & Rectifiers | Diodes & Rectifiers |
Unit Weight | 0.004833 oz | 0.004833 oz | 0.005291 oz |
Product | Switching Diodes | Rectifiers | |
Mounting Style | Through Hole | Through Hole | |
Configuration | Single | Single | |
Vf - Forward Voltage | 1.2 V | 1.1 V | |
Ir - Reverse Current | 500 nA | 5 uA | |
Minimum Operating Temperature | - 65 C | - 65 C | |
Maximum Operating Temperature | + 175 C | + 175 C | |
Category | Discrete Semiconductor ProductsDiodesRectifiersSingle Diodes | ||
Mfr | Microchip Technology | ||
Series | Military, MIL-PRF-19500/116 | ||
Product Status | Active | ||
Technology | Standard | ||
Voltage - DC Reverse (Vr) (Max) | 75 V | ||
Current - Average Rectified (Io) | 200mA | ||
Voltage - Forward (Vf) (Max) @ If | 1.2 V @ 50 mA | ||
Speed | Small Signal =< 200mA (Io), Any Speed | ||
Reverse Recovery Time (trr) | 5 ns | ||
Current - Reverse Leakage @ Vr | 500 nA @ 75 V | ||
Capacitance @ Vr, F | 4pF @ 0V, 1MHz | ||
Mounting Type | Through Hole | ||
Supplier Device Package | DO-35 (DO-204AH) | ||
Operating Temperature - Junction | -65°C ~ 175°C | ||
Base Product Number | 1N914 | ||
Peak Reverse Voltage | 75 V | ||
Max Surge Current | 2 A | ||
If - Forward Current | 200 mA | ||
Recovery Time | 5 ns | ||
Type | Standard Recovery Rectifiers | ||
Vz - Zener Voltage | 5.1 V | ||
Voltage Tolerance | 5 % | ||
Pd - Power Dissipation | 500 mW | ||
Zener Current | 75 mA | ||
Zz - Zener Impedance | 14 Ohms | ||
Test Current | 20 mA | ||
Diameter | 2.29 mm | ||
Ir - Maximum Reverse Leakage Current | 5 uA | ||
Length | 5.08 mm | ||
Voltage Temperature Coefficient | 0.03 %/C |
Part Number
Start with: JANTX
Part Number "JANTX" returned 23 results; all results matched and started with "JANTX".
Part Number | Description | Brand | Package/Case | Lifecycle Status | Cargo cycle | In Stock | Operation |
---|---|---|---|---|---|---|---|
JANTX1N6060A |
TVS Diode Single Bi-Dir 64V 1.5KW 2-Pin DO-13 |
MICROSEMI | DO-13 | ACTIVE | 3~7 Days | 6,312.00 | |
JANTX1N6072A |
ESD Suppressors / TVS Diodes 328V 4.6A Bi-Directional TVS THT |
Microchip Technology | DO13-2 | Active | 3~7 Days | 6,358.00 | |
JANTX2N2219A |
reliability components |
Onsemi | TO-5-3 | 3~7 Days | 4,847.00 | ||
JANTX1N5420 |
Rectifier Diode JANTX1N5420 - 600 Volt, SOD-61H2 |
MICROSEMI | SOD-64 | 3~7 Days | 5,130.00 | ||
JANTX1N1206A |
Rectifier Unit: JANTX1N1206A offers precision rectification, guaranteeing stable DC output for various electronic applications |
MICROSEMI | DO-4 | Active | 3~7 Days | 5,035.00 | |
JANTX2N6849 |
TO-205AF Package: JANTX2N6849 -100V Single P-Channel Hi-Rel MOSFET with Hermetic Seal for Optimal Reliability |
MICROSEMI | TO-39 | 3~7 Days | 7,106.00 | ||
JANTX1N6391 |
Schottky diodes and rectifiers engineered for power delivery up to 45 volts (V), with stud-mounting configuration |
Microchip Technology | DO203AA-2 | Active | 3~7 Days | 7,084.00 | |
JANTX1N5816 |
150V 20A Rectifier Diode Switching 35ns 2-Pin DO-4 |
MICROSEMI | DO-4 | 3~7 Days | 4,976.00 | ||
JANTX1N5819UR-1 |
Schottky Diode with a voltage rating of 45V and current capacity of 1A, packaged in a 2-Pin DO-213AB Bag |
Microchip | DO-213AB-2 | Discontinued | 3~7 Days | 3,341.00 | |
JANTX1N6306 |
DO-203AB-packaged hermetic rectifier capable of handling 150 volts and 1 amp, boasting a rapid switching time of 50 nanoseconds |
Microchip Technology | DO5-2 | Active | 3~7 Days | 7,413.00 | |
JANTXV2N2907AUB |
Small signal PNP silicon transistor with 0.6A collector current and 60V breakdown voltage |
Aeroflex | SMD-4 | Active | 3~7 Days | 5,964.00 | |
JANTX1N5417 |
Rectifier Diode, 1 Phase, 1 Element, 3A, 200V V(RRM), Silicon, DO-35, HERMETIC SEALED, 301, 2PIN |
MICROSEMI | DO-41 | 3~7 Days | 3,445.00 | ||
JANTX2N5664 |
Bipolar Junction NPN Transistor, TO-66 Package |
Microchip | TO-66 | Active | 3~7 Days | 5,396.00 | |
JANTX2N2484 |
Bipolar Transistors - BJT BJTs |
Microchip Technology | TO-18 | Active | 3~7 Days | 9,683.00 | |
JANTX1N6036A |
ESD Suppressors / TVS Diodes 11.3V 132A Bi-Directional TVS THT |
Microchip Technology | DO13-2 | ACTIVE | 3~7 Days | 7,057.00 | |
JANTX1N6053A |
ESD Suppressors / TVS Diodes 53.9V 28A Bi-Directional TVS THT |
microchip | DO-13 | Active | 3~7 Days | 5,722.00 | |
JANTX1N6054A |
TVS Diode Single Bi-Dir 36V 1.5KW 2-Pin DO-13 |
MICROSEMI | DO-13 | ACTIVE | 3~7 Days | 5,614.00 | |
JANTX2N6796 |
Power Field-Effect Transistor |
Infineon | TO-205AF-3 | OBSOLETE | 3~7 Days | 7,656.00 | |
JANTX4N49A |
Hi-Rel Opto Isolator with Base Output |
Tt Electronics / Bi Technologies | TO78-6 | ACTIVE | 3~7 Days | 5,311.00 | |
JANTX2N2907A |
JANTX2N2907A serves as a Small-Signal Bipolar Junction Transistor (BJT), engineered to meet the demands of intricate electronic systems |
Microchip | TO-18-3 | ACTIVE | 3~7 Days | 8,446.00 | |
JANTX1N5811 |
High-performance diode JANTX1N5811: This diode offers superior performance, making it a reliable choice for demanding electronic circuits |
MICROSEMI | DO-13 | Active | 3~7 Days | 5,180.00 | |
JANTX1N5811US |
Rectifier Diode, 150V, DO-213AB |
MICROSEMI | B, SQ-MELF | 3~7 Days | 3,602.00 | ||
JANTX1N4462 |
500mW power rating, 5% tolerance, 2-pin configuration |
MICROSEMI | DO-204AL, DO-41, | Active | 3~7 Days | 6,564.00 |