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Specification Comparison: K4S641632H-TC75 vs K4S641632K-UC75 vs K4S641632H-TC60
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| Manufacturer | Samsung Semiconductor | SAMSUNG | Samsung Semiconductor |
| Package | TSOP-54 | TSOP-54 | TSSOP54 |
| Description | SDRAM, 4M x 16, 54 Pin, Plastic, TSOP | PDSO54 Synchronous DRAM chip offering 4MX16 storage and operating at 5.4ns speed in CMOS technology | 4M x 16 SDRAM in TSOP plastic packaging |
| Stock | 6058 | 5452 | 4793 |
| Rohs Code | No | Yes | No |
| Part Life Cycle Code | Obsolete | Obsolete | Obsolete |
| Reach Compliance Code | compliant | ||
| ECCN Code | EAR99 | EAR99 | EAR99 |
| HTS Code | 8542.32.00.02 | 8542.32.00.02 | 8542.32.00.02 |
| Access Mode | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST |
| Access Time-Max | 5.4 ns | 5.4 ns | 5 ns |
| Additional Feature | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH |
| Clock Frequency-Max (fCLK) | 133 MHz | 133 MHz | 166 MHz |
| I/O Type | COMMON | COMMON | COMMON |
| Interleaved Burst Length | 1,2,4,8 | 1,2,4,8 | 1,2,4,8 |
| JESD-30 Code | R-PDSO-G54 | R-PDSO-G54 | R-PDSO-G54 |
| Length | 22.22 mm | 22.22 mm | 22.22 mm |
| Memory Density | 67108864 bit | 67108864 bit | 67108864 bit |
| Memory IC Type | SYNCHRONOUS DRAM | SYNCHRONOUS DRAM | SYNCHRONOUS DRAM |
| Memory Width | 16 | 16 | 16 |
| Number of Functions | 1 | 1 | 1 |
| Number of Ports | 1 | 1 | 1 |
| Number of Terminals | 54 | 54 | 54 |
| Number of Words | 4194304 words | 4194304 words | 4194304 words |
| Number of Words Code | 4000000 | 4000000 | 4000000 |
| Operating Mode | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS |
| Operating Temperature-Max | 70 °C | 70 °C | 70 °C |
| Organization | 4MX16 | 4MX16 | 4MX16 |
| Output Characteristics | 3-STATE | 3-STATE | 3-STATE |
| Package Body Material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package Code | TSOP2 | TSOP2 | TSOP2 |
| Package Equivalence Code | TSOP54,.46,32 | TSOP54,.46,32 | TSOP54,.46,32 |
| Package Shape | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| Package Style | SMALL OUTLINE, THIN PROFILE | SMALL OUTLINE, THIN PROFILE | SMALL OUTLINE, THIN PROFILE |
| Power Supplies | 3.3 V | 3.3 V | 3.3 V |
| Qualification Status | Not Qualified | Not Qualified | Not Qualified |
| Refresh Cycles | 4096 | 4096 | 4096 |
| Seated Height-Max | 1.2 mm | 1.2 mm | 1.2 mm |
| Self Refresh | YES | YES | YES |
| Sequential Burst Length | 1,2,4,8,FP | 1,2,4,8,FP | 1,2,4,8,FP |
| Standby Current-Max | 0.001 A | 0.001 A | 0.001 A |
| Supply Current-Max | 0.135 mA | 0.085 mA | 0.16 mA |
| Supply Voltage-Max (Vsup) | 3.6 V | 3.6 V | 3.6 V |
| Supply Voltage-Min (Vsup) | 3 V | 3 V | 3 V |
| Supply Voltage-Nom (Vsup) | 3.3 V | 3.3 V | 3.3 V |
| Surface Mount | YES | YES | YES |
| Technology | CMOS | CMOS | CMOS |
| Temperature Grade | COMMERCIAL | COMMERCIAL | COMMERCIAL |
| Terminal Form | GULL WING | GULL WING | GULL WING |
| Terminal Pitch | 0.8 mm | 0.8 mm | 0.8 mm |
| Terminal Position | DUAL | DUAL | DUAL |
| Width | 10.16 mm | 10.16 mm | 10.16 mm |
| Part Package Code | TSOP2 | TSOP2 | |
| Pin Count | 54 | 54 | |
| Moisture Sensitivity Level | 3 | 3 | |
| JESD-609 Code | e6 | e0 | |
| Terminal Finish | TIN BISMUTH | TIN LEAD | |
| Pbfree Code | Yes | ||
| Peak Reflow Temperature (Cel) | 260 |
Part Number
Start with: K4S64
Part Number "K4S64" returned 20 results; all results matched and started with "K4S64".
| Part Number | Description | Brand | Package/Case | Lifecycle Status | Cargo cycle | In Stock | Operation |
|---|---|---|---|---|---|---|---|
| K4S643232H-UC60 |
86 Pin Plastic TSSOP |
Samsung Semiconductor | TSSOP-86 | 3~7 Days | 6,981.00 | ||
| K4S641632F-TC75 |
Synchronous DRAM, 4MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 |
SAMSUNG | TSOP-54 | 3~7 Days | 6,862.00 | ||
| K4S641632N-LC75 |
Synchronous DRAM, 4MX16, 5.4ns, CMOS, PDSO54 |
SAMSUNG | TSOP-54 | 3~7 Days | 6,367.00 | ||
| K4S641632H-UC75 |
This IC-KH-UC product is a high-quality, low-power consumption memory module suitable for various application |
SAMSUNG | TSOP-54 | 3~7 Days | 7,193.00 | ||
| K4S641632K-UC60 |
Advanced semiconductor device for data processing |
SAMSUNG | TSOP-54 | 3~7 Days | 4,781.00 | ||
| K4S641632N-LC60 |
High-speed Synchronous DRAM with 4MX16 memory array and 5ns timing in a CMOS package |
SAMSUNG | TSOP-54 | 3~7 Days | 5,611.00 | ||
| K4S641632K |
The K4S641632K is a 64Mb synchronous DRAM chip with a speed of 133MHz. |
SANYO | TQFP | 3~7 Days | 4,724.00 | ||
| K4S641632F-TC60 |
Synchronous DRAM, 4MX16, 5ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 |
SAMSUNG | TSOP54 | 3~7 Days | 7,864.00 | ||
| K4S641632H-UC60 |
Synchronous DRAM, 4MX16, 5ns, CMOS, PDSO54 |
SAMSUNG | TSOP-54 | 3~7 Days | 6,187.00 | ||
| K4S641632F-TI75 |
Reliable and fast, this 64Mb SDRAM chip runs at 133MHz on 3.3V power |
Samsung | TSOP-54 | 3~7 Days | 3,629.00 | ||
| K4S643232E-TC60 |
Synchronous DRAM, 2MX32, 5.5ns, CMOS, PDSO86 |
Samsung Semiconductor | 3~7 Days | 5,524.00 | |||
| K4S643232C-TC70 |
DRAM Chip SDRAM 64M-Bit 2Mx32 3.3V 86-Pin TSOP-II |
Samsung Semiconductor | 3~7 Days | 6,826.00 | |||
| K4S640430D-TC1H |
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SAMSUNG | SOP-54L | 3~7 Days | 415.00 | ||
| K4S640432C-TC80 |
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SAMSUNG | TSSOP | 3~7 Days | 1.00 | ||
| K4S640432D-TC1H |
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SAMSUNG | SSOP-54 | 3~7 Days | 18,000.00 | ||
| K4S640432D-TC1L |
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SAMSUNG | TSOP-56 | 3~7 Days | 18,000.00 | ||
| K4S640432D-TC60 |
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SAMSUNG | TSSOP5 | 3~7 Days | 236.00 | ||
| K4S640432D-TC75 |
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SAMSUNG | TSOP54 | 3~7 Days | 80.00 | ||
| K4S640432D-TC80 |
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SAMSUNG | TSSOP | 3~7 Days | 18,000.00 | ||
| K4S640432D-TL10 |
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SAMSUNG | TSOP | 3~7 Days | 18,000.00 |