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Specification Comparison: K4T1G084QF-BCE6 vs K4T1G084QE-HCE6 vs K4T1G084QJ-BCE7
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| Manufacturer | SAMSUNG | SAMSUNG | Samsung Electronics |
| Package | FBGA-60 | BGA | FBGA |
| Description | Ddr Dram, 128MX8, 0.45NS, Cmos, PBGA60 | With a compact FBGA-60 form factor, this memory module is ideal for compact devices requiring high-performance memory | DRAM Chip DDR2 SDRAM |
| Stock | 4099 | 3529 | 7207 |
| Organization | 128MX8 | 128Mx8 | |
| Product Category | IC Chips | ||
| Pbfree Code | Yes | ||
| Rohs Code | Yes | ||
| Part Life Cycle Code | Obsolete | ||
| ECCN Code | EAR99 | ||
| HTS Code | 8542.32.00.32 | ||
| Access Mode | MULTI BANK PAGE BURST | ||
| Access Time-Max | 0.45 ns | ||
| Additional Feature | AUTO/SELF REFRESH | ||
| Clock Frequency-Max (fCLK) | 333 MHz | ||
| I/O Type | COMMON | ||
| Interleaved Burst Length | 4,8 | ||
| JESD-30 Code | R-PBGA-B60 | ||
| Length | 9.5 mm | ||
| Memory Density | 1073741824 bit | ||
| Memory IC Type | DDR2 DRAM | ||
| Memory Width | 8 | ||
| Moisture Sensitivity Level | 3 | ||
| Number of Functions | 1 | ||
| Number of Ports | 1 | ||
| Number of Terminals | 60 | ||
| Number of Words | 134217728 words | ||
| Number of Words Code | 128000000 | ||
| Operating Mode | SYNCHRONOUS | ||
| Operating Temperature-Max | 85 °C | ||
| Output Characteristics | 3-STATE | ||
| Package Body Material | PLASTIC/EPOXY | ||
| Package Code | TFBGA | ||
| Package Equivalence Code | BGA60,9X11,32 | ||
| Package Shape | RECTANGULAR | ||
| Package Style | GRID ARRAY, THIN PROFILE, FINE PITCH | ||
| Peak Reflow Temperature (Cel) | 260 | ||
| Power Supplies | 1.8 V | ||
| Qualification Status | Not Qualified | ||
| Refresh Cycles | 8192 | ||
| Seated Height-Max | 1.2 mm | ||
| Self Refresh | YES | ||
| Sequential Burst Length | 4,8 | ||
| Supply Current-Max | 0.155 mA | ||
| Supply Voltage-Max (Vsup) | 1.9 V | ||
| Supply Voltage-Min (Vsup) | 1.7 V | ||
| Supply Voltage-Nom (Vsup) | 1.8 V | ||
| Surface Mount | YES | ||
| Technology | CMOS | ||
| Temperature Grade | OTHER | ||
| Terminal Form | BALL | ||
| Terminal Pitch | 0.8 mm | ||
| Terminal Position | BOTTOM | ||
| Width | 7.5 mm | ||
| ECCN (US) | EAR99 | ||
| Part Status | Obsolete | ||
| Automotive | No | ||
| PPAP | No | ||
| DRAM Type | DDR2 SDRAM | ||
| Chip Density (bit) | 1G | ||
| Number of Internal Banks | 8 | ||
| Number of Words per Bank | 16M | ||
| Number of Bits/Word (bit) | 8 | ||
| Data Bus Width (bit) | 8 | ||
| Maximum Clock Rate (MHz) | 800 | ||
| Maximum Access Time (ns) | 0.4 | ||
| Address Bus Width (bit) | 17 | ||
| Interface Type | SSTL_1.8 | ||
| Minimum Operating Supply Voltage (V) | 1.7 | ||
| Maximum Operating Supply Voltage (V) | 1.9 | ||
| Operating Current (mA) | 65 | ||
| Minimum Operating Temperature (°C) | 0 | ||
| Maximum Operating Temperature (°C) | 95 | ||
| Supplier Temperature Grade | Commercial | ||
| Number of I/O Lines (bit) | 8 | ||
| Mounting | Surface Mount | ||
| Package Height | 0.53 + 0.1(Max) | ||
| Package Width | 7.5 | ||
| Package Length | 9.5 | ||
| PCB changed | 60 | ||
| Standard Package Name | BGA | ||
| Supplier Package | FBGA | ||
| Pin Count | 60 | ||
| Lead Shape | Ball |
Part Number
Start with: K4T1G
Part Number "K4T1G" returned 20 results; all results matched and started with "K4T1G".
| Part Number | Description | Brand | Package/Case | Lifecycle Status | Cargo cycle | In Stock | Operation |
|---|---|---|---|---|---|---|---|
| K4T1G164QQ-HCE6 |
Ultra-fast data transmission for seamless device operation |
SAMSUNG | FBGA-84 | Discontinued | 3~7 Days | 3,956.00 | |
| K4T1G164QF-BCF7 |
High density CMOS technology for improved performance |
SAMSUNG | FBGA-84 | 3~7 Days | 3,335.00 | ||
| K4T1G084QF-BCF7 |
Advanced 128MX8 configuration |
SAMSUNG | BGA-60 | 3~7 Days | 4,206.00 | ||
| K4T1G164QQ-HCF7 |
CMOS PBGA84 DDR memory module with 64MX16 configuration |
SAMSUNG | FBGA-84 | 3~7 Days | 4,438.00 | ||
| K4T1G164QF-BCE6 |
0.45 nanoseconds |
SAMSUNG | BGA-84 | 3~7 Days | 4,887.00 | ||
| K4T1G084QQ-HCF7 |
Experience exceptional memory solutions with the reliable and fast KQ-HC |
SAMSUNG | BGA-60 | 3~7 Days | 7,382.00 | ||
| K4T1G164QD-ZCE6 |
DDR DRAM with 64MX16 capacity and 0.45ns speed, PBGA84 packaging |
SAMSUNG | FBGA84 | 3~7 Days | 4,597.00 | ||
| K4T1G084QQ-HCE6 |
DDR memory module |
SAMSUNG | FBGA-60 | 3~7 Days | 5,181.00 | ||
| K4T1G084QE-HCF7 |
CMOS technology |
SAMSUNG | 60FBGA | 3~7 Days | 3,973.00 | ||
| K4T1G164QQ-HCE7 |
High-speed memory |
SAMSUNG | FBGA-84 | 3~7 Days | 3,729.00 | ||
| K4T1G164QE-HCF8 |
This product is a DDR DRAM with a capacity of 64MX16 and a speed of 0.35ns." |
SAMSUNG | FBGA84 | 3~7 Days | 6,271.00 | ||
| K4T1G164QE-HCE6 |
Advanced PBGA84 packaging for durability and stability |
SAMSUNG | BGA-84 | 3~7 Days | 4,906.00 | ||
| K4T1G084QA-ZCE6 |
Ultra-fast DDR DRAM with Pb-free construction and 68 ball grid array package |
SAMSUNG | BGA | 3~7 Days | 5,907.00 | ||
| K4T1G164QF-BCE7 |
Cost-effective 1Gb DDR2 RAM |
Samsung | FPBGA84 | 3~7 Days | 5,486.00 | ||
| K4T1G164QG-BIE6000 |
Fast and efficient 1GB DDR2 RAM module for optimized system performance |
Samsung Electronics | FBGA | 3~7 Days | 2,347.00 | ||
| K4T1G164QJ-BIE7000 |
Reliable and scalable memory solution for mission-critical systems and high-end computing |
Samsung Electronics | FBGA | 3~7 Days | 5,989.00 | ||
| K4T1G164QF-BCE7T00 |
64Mx16 memory chip for massive storage capacity |
Samsung Electronics | FBGA | 3~7 Days | 6,668.00 | ||
| K4T1G164QE-HCE70T00 |
Efficient DDR2 SDRAM for system integration |
Samsung Electronics | FBGA | 3~7 Days | 7,143.00 | ||
| K4T1G084QG-BCF7000 |
Cutting-edge SDRAM technology for increased data processing speed |
Samsung Electronics | FBGA | 3~7 Days | 6,906.00 | ||
| K4T1G164QA-ZCD5000 |
Compact and lightweight FBGA package reduces board space requirements for increased density |
Samsung Electronics | FBGA | 3~7 Days | 2,578.00 |