Specification Comparison: NE5517AN vs NE556DR vs NE5534DR
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Part Number
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Manufacturer | Onsemi | Texas Instruments | Texas Instruments |
Package | PDIP-16 | SOIC-14 | SOIC (D)-8 |
Description | Transconductance amplifiers NE5517AN | 00kHz frequency | Enhance your audio experience with this ultra-low noise op amp designed for demanding applications |
Stock | 6639 | 7748 | 5292 |
Architecture | Bipolar | Bipolar | |
Rating | Catalog | Catalog | |
Operating temperature range (°C) | 0 to 70 | 0 to 70 | |
Status | Obsolete | ||
Compliance | PbAHP | ||
Package Type | PDIP-16 | ||
Case Outline | 648-08 | ||
MSL Type | NA | ||
MSL Temp (°C) | 0 | ||
Container Type | TUBE | ||
Container Qty. | 25 | ||
ON Target | N | ||
Rail to Rail | No | ||
Channels | 2 | ||
VS Min (V) | 10 | ||
VS Max (V) | 18 | ||
Iq Typ (mA) | 1.3 | ||
VOS Max (mV) | 5 | ||
GBW Typ (MHz) | 2 | ||
SR Typ (V/µs) | 50 | ||
IO Typ (mA) | 0.005 | ||
ΔVOS/ΔT (μV/C) | 7 | ||
Ibias Typ (pA) | 400000 | ||
CMRR Typ (dB) | 110 | ||
Temperature Range (°C) | 0 to 70 | ||
Pricing ($/Unit) | Price N/A | ||
Function | General-purpose timer | ||
Iq (typ) (mA) | 4 | ||
Supply voltage (max) (V) | 16 | ||
Supply voltage (min) (V) | 4.5 | ||
Number of channels | 1 | ||
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V) | 10 | ||
Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V) | 30 | ||
GBW (typ) (MHz) | 10 | ||
Slew rate (typ) (V/µs) | 13 | ||
Rail-to-rail | No | ||
Vos (offset voltage at 25°C) (max) (mV) | 4 | ||
Iq per channel (typ) (mA) | 4 | ||
Vn at 1 kHz (typ) (nV√Hz) | 4 | ||
Features | Decompensated, Standard Amps | ||
THD + N at 1 kHz (typ) (%) | 0.002 | ||
Iout (typ) (A) | 0.038 | ||
CMRR (typ) (dB) | 100 | ||
Input bias current (max) (pA) | 1500000 |
Part Number
Start with: NE551
Part Number "NE551" returned 20 results; all results matched and started with "NE551".
Part Number | Description | Brand | Package/Case | Lifecycle Status | Cargo cycle | In Stock | Operation |
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NE5517D |
The NE5517D transconductance amplifier provides exceptional functionality in converting voltage input to current output |
Onsemi | 16-SOIC(0.154",3.90mmWidth) | OBSOLETE | 3~7 Days | 9,359.00 | |
NE5517N |
Dual Transconductance Amplifier |
Onsemi | PDIP-16 | OBSOLETE | 3~7 Days | 5,445.00 | |
NE5517ANG |
Tube packaging for NE5517ANG ensures secure handling and storage |
Onsemi | PDIP-16 | 3~7 Days | 4,178.00 | ||
NE5517DR2 |
Ideal for audio applications requiring dual amplification |
Onsemi | SOIC-16 | 3~7 Days | 2,237.00 | ||
NE5517DG |
High-gain amplifier suitable for audio and DC applicatio |
Onsemi | SOIC-16 | 3~7 Days | 4,190.00 | ||
NE5517NG |
Experience superior audio performance with the NE5517NG transconductance amplifier |
Onsemi | PDIP-16 | 3~7 Days | 2,766.00 | ||
NE5511279A-T1-A |
Product Overview: The NE5511279A-T1-A is a high-performance RF MOSFET, capable of handling voltages up to 7 |
Cel | SMD-4 | 3~7 Days | 6,186.00 | ||
NE5510276A-T1 |
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SMD | 3~7 Days | 1,000.00 | |||
NE5510279A-A |
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NEC | 3~7 Days | 2,490.00 | |||
NE5510279AT1 |
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NEC | SMD | 3~7 Days | 2,000.00 | ||
NE5510279A-T1 |
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RENESAS | PW-X79 | 3~7 Days | 208.00 | ||
NE5510279A-T1-A |
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RENESAS | 79A | 3~7 Days | 8,257.00 | ||
NE5510T |
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NE | SOP-8 | 3~7 Days | 855.00 | ||
NE5511279A |
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NEC/CEL | 79A | 3~7 Days | 6,000.00 | ||
NE5511279A-A |
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CEL | 79A | 3~7 Days | 1,500.00 | ||
NE5511279A-T1 |
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RENESAS | TO-86 | 3~7 Days | 1,190.00 | ||
NE5511279A-TI |
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NEC | 3~7 Days | 180.00 | |||
NE5511279-T1 |
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KEXIN | SMD DIP | 3~7 Days | 133,000.00 | ||
NE5512 |
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PHILIPS | SOP-8 | 3~7 Days | 740.00 | ||
NE5512D |
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PHILIPS | SOP-8 | 3~7 Days | 5,870.00 |