D2PAK-3 Related Product
Part Number | Description | Brand | Lifecycle Status | Cargo cycle | In Stock | Operation |
---|---|---|---|---|---|---|
CSD19536KTTT | DDPAK N-channel Silicon Transistor with 100V 200A rating | Texas Instruments | Active | 3~7 Days | 6,681 | |
SUM60N10-17-E3 | Trans MOSFET N-CH 100V 60A 3-Pin(2+Tab) D2PAK T/R | Siliconix | 3~7 Days | 3,623 | ||
SUM110N10-09-E3 | Power Field-Effect Transistor, 110A I(D), 100V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | Siliconix | Active | 3~7 Days | 7,267 | |
IPB020N10N5ATMA1 | Trans MOSFET N-CH 100V 176A 3-Pin(2+Tab) D2PAK T/R | Infineon Technologies | 3~7 Days | 4,993 | ||
IPB027N10N3GATMA1 | Trans MOSFET N-CH 100V 120A 3-Pin(2+Tab) D2PAK T/R | Infineon Technologies | 3~7 Days | 7,298 | ||
PSMN3R8-100BS,118 | Trans MOSFET N-CH 100V 120A 3-Pin(2+Tab) D2PAK T/R | Nexperia Usa Inc. | 3~7 Days | 6,583 | ||
PSMN3R3-80BS,118 | PSMN3R3-80BS,118 - MOSFET designed for low voltage operation | Nexperia Usa Inc. | 3~7 Days | 6,566 | ||
NTB5860NT4G | <p>60 V, 3 mOhm, 220 A, N-Channel, D2PAK Power MOSFET</p> | Onsemi | 3~7 Days | 5,486 | ||
NTB60N06T4G | <p>Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits.</p> | Onsemi | 3~7 Days | 2,470 | ||
NTB52N10G | MOSFET 100V 52A N-Channel | Onsemi | 3~7 Days | 3,722 | ||
NVB6413ANT4G | Power MOSFET 100V 42A 28 mohm Single N-Channel D2PAK | Onsemi | 3~7 Days | 3,335 | ||
IXTA60N20T | TO263 packaged transistor with N-MOSFET technology | Ixys Integrated Circuits Division | ACTIVE | 3~7 Days | 5,680 | |
IXFA7N100P | PAK package with 3 pins and 2 tabs | Ixys Integrated Circuits Division | 3~7 Days | 4,934 | ||
IXTA130N10T | High-power N-Channel MOSFET in TO-263 package with 100V and 130A | Ixys Integrated Circuits Division | ACTIVE | 3~7 Days | 8,171 | |
IXTA56N15T | IXTA56N15T: MOSFET with 56 Ampere Capacity, 150 Volt Rating, and 36 Ohms Rds | Ixys Integrated Circuits Division | 3~7 Days | 4,406 | ||
IXTA140P05T | Rugged and efficient power management solutio | Ixys Integrated Circuits Division | ACTIVE | 3~7 Days | 8,374 | |
FQB8P10TM | MOSFET 100V P-Channel QFET | Onsemi | 3~7 Days | 7,038 | ||
FQB7N60TM | Power MOSFET, N-Channel, QFET®, 600 V, 7.4 A, 1 Ω, D2PAK | Onsemi | 3~7 Days | 3,880 | ||
CS8221YDPR3 | Low Dropout Regulator for Small Signal Applications | Onsemi | 3~7 Days | 4,529 | ||
2SK4177-DL-1E | 13 Ohm resistance rating | Onsemi | End Of Life | 3~7 Days | 6,355 | |
BUK963R3-60E,118 | This MOSFET is specifically engineered for automotive applications | Nexperia Usa Inc. | 3~7 Days | 6,433 | ||
BUK765R0-100E,118 | MOSFET BUK765R0-100E/SOT404/D2PAK | Nexperia Usa Inc. | 3~7 Days | 6,108 | ||
BUK763R8-80E,118 | MOSFET BUK763R8-80E/SOT404/D2PAK | Nexperia Usa Inc. | 3~7 Days | 7,129 | ||
SGB15N60HS | SGB15N60HS: A Powerful IGBT Transistor | Infineon | OBSOLETE | 3~7 Days | 5,363 | |
BUK9612-55B,118 | This MOSFET has a low on-resistance of 9mΩ at 10V and 25A, making it suitable for high-power applications | Nexperia | 3~7 Days | 6,215 | ||
LM317D2T | -pin voltage regulator for precise voltage control | Stmicroelectronics | 3~7 Days | 7,638 | ||
HGT1S20N60C3S9A | N-Channel IGBT from the UFS Series, rated at 45A and 600V | Onsemi | OBSOLETE | 3~7 Days | 9,426 | |
IRF1312S | IRF1312S: 80V N-channel power MOSFET in D2PAK package | Infineon Technologies | OBSOLETE | 3~7 Days | 9,498 | |
IXTA50N25T | 50 Amps MOSFET with 250V rating and 50 Rds | Ixys Integrated Circuits Division | 3~7 Days | 5,641 | ||
IXFA270N06T3 | MOSFET with 60V/270A rating TrenchT3 | Ixys Integrated Circuits Division | Active | 3~7 Days | 9,221 | |
SIHB12N60E-GE3 | Trans MOSFET N-CH 600V 12A 3-Pin(2+Tab) D2PAK | Siliconix | Active | 3~7 Days | 8,196 | |
IRF9630STRLPBF | Low On-Resistance Power MOSFET for High Voltage Applications | Siliconix | 3~7 Days | 5,160 | ||
IRF840STRRPBF | Trans MOSFET N-CH 500V 8A 3-Pin(2+Tab) D2PAK T/R | Siliconix | 3~7 Days | 3,404 | ||
IRF840SPBF | N-channel MOSFET with 500V voltage rating and 8A current capability in a D2PAK package | Vishay | ACTIVE | 3~7 Days | 6,450 | |
IRF840ASTRLPBF | ROHS-compliant N-channel MOSFET suitable for use in environments requiring adherence to hazardous substance regulations | Siliconix | 3~7 Days | 5,433 | ||
IRF830ASTRLPBF | MOSFET 500V N-CH HEXFET D2-PA | Siliconix | 3~7 Days | 4,178 | ||
IRF740SPBF | Trans MOSFET N-CH 400V 10A 3-Pin(2+Tab) D2PAK | Siliconix | ACTIVE | 3~7 Days | 6,553 | |
IRF730ASTRLPBF | Trans MOSFET N-CH 400V 5.5A 3-Pin(2+Tab) D2PAK T/R | Siliconix | 3~7 Days | 2,683 | ||
IRF640STRRPBF | N-channel power MOSFET with a voltage rating of 200V and a current rating of 18A in a D2PAK package on tape and reel | Siliconix | 3~7 Days | 3,745 | ||
IRF640STRLPBF | Trans MOSFET N-CH 200V 18A 3-Pin(2+Tab) D2PAK T/R | Siliconix | 3~7 Days | 7,231 |
Additional Package/Case