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SOT-227-4 Related Product
| Part Number | Description | Brand | Lifecycle Status | Cargo cycle | In Stock | Operation |
|---|---|---|---|---|---|---|
| IXTN110N20L2 | With a 200V voltage rating and 100A current capacity | IXYS | 3~7 Days | 4,759 | ||
| APL502J | 500V MOSFET Discrete Semiconductor Modules FG, 0.12_OHM | MICROSEMI | Active | 3~7 Days | 7,809 | |
| ESM2030DV | Power transistor with NPN silicon technology, rated at 67A and 300V | STMicroelectronics | Obsolete | 3~7 Days | 5,527 | |
| VS-UFB230FA60 | Siliconix / Vishay VS-UFB230FA60 4-Pin SOT-227 | Vishay | Active | 3~7 Days | 5,471 | |
| IXFN110N60P3 | IXFN110N60P3 is an N-channel SOT-227B MOSFET | IXYS | 3~7 Days | 4,585 | ||
| IXTN200N10L2 | 00V 178A transistor | IXYS | 3~7 Days | 4,892 | ||
| IXFN300N10P | N-Channel Power MOSFET | IXYS | 3~7 Days | 7,134 | ||
| IXFN44N100Q3 | kV 38A SOT227B screw Idm 110A 960W | IXYS | Active | 3~7 Days | 5,288 | |
| APT2X61D120J | DIODE MODULE 1.2KV 53A ISOTOP | MICROSEMI | Active | 3~7 Days | 3,163 | |
| APT2X31D60J | 00V 30A 85ns 4-Pin SOT-227 Tube Rectifier Diode Switching | MICROSEMI | Active | 3~7 Days | 7,995 | |
| APT100M50J | APT100M50J is a discrete semiconductor module employing MOSFET technology | MICROSEMI | Active | 3~7 Days | 6,419 | |
| APT2X61S20J | Product APT2X61S20J is a Schottky barrier diode (SBD) conforming to ROHS standards | Microchip Technology | Active | 3~7 Days | 6,284 | |
| APT20M11JLL | APT20M11JLL Module: ISOTOP Single Transistor, Rated for 200V, Screw Mounting, Handles up to 704A | Microchip Technology | Active | 3~7 Days | 6,737 | |
| APT20M11JVR | N-Channel power transistor rated for 200V and 175A | Microchip Technology | 3~7 Days | 6,359 | ||
| UFB200FA40P | Item Description: Rectifiers capable of handling 400 volts and 240 amps | Vishay | 3~7 Days | 4,081 | ||
| APT41F100J | APT41F100J Discrete Semiconductor Modules FREDFET MOS8 1000 V 41 A SOT-227 | Microchip Technology | Active | 3~7 Days | 6,229 | |
| VS-FB190SA10 | 27 MOSFET with 190A current rating | VISHAY | 3~7 Days | 6,717 | ||
| VS-FB180SA10P | N-Channel Power MOSFET with a Voltage Rating of 100V and a Continuous Current Rating of 180A, Packaged in SOT-227 with Four Pins | VISHAY | Discontinued | 3~7 Days | 5,340 | |
| FA38SA50LC | Power MOSFET with 500V Voltage Rating and Single N-Channel Configuration | VISHAY | Discontinued | 3~7 Days | 6,223 | |
| APT60DF60HJ | Single Diode Rectifier Bridge with 600V and 90A Rating | MICROSEMI | Active | 3~7 Days | 3,049 | |
| APT40DR160HJ | SOT-227 Tube Diode Rectifier Bridge rated at 1.6KV and 40A | MICROSEMI | Active | 3~7 Days | 4,253 | |
| VS-UFB200FA40P | High-quality diode array for demanding applicatio | VISHAY | Discontinued | 3~7 Days | 5,880 | |
| IXYN80N90C3H1 | IGBT transistor IXYN80N90C3H1AH | Ixys Integrated Circuits Division | Active | 3~7 Days | 5,688 | |
| VS-SA61BA60 | Reliable and robust single-phased diode rectifier solutio | VISHAY | Active | 3~7 Days | 3,525 | |
| APT20M11JFLL | N Channel SOT-227B-4 MOSFETs ROHS, 200V 176A 11mΩ@88A, 10V 5V@5mA | Microchip Technology | Active | 3~7 Days | 3,811 | |
| VS-UFB200FA20P | SOT-227 4-Pin Rectifier Diode Switching 120A 45ns | VISHAY | Discontinued | 3~7 Days | 6,230 | |
| UFB200FA40 | SOT-227 Ultrafast Double Diode Rectifiers 400V 200A | Vishay | 3~7 Days | 7,705 | ||
| DMA200X1600NA | SOT227B diode module rated at 2x100A and 1600V | IXYS | Active | 3~7 Days | 4,923 | |
| STE100N20 | Featuring N-channel silicon technology, the STE100N20 is a high-performance power MOSFET designed for demanding applications | STMicroelectronics | 3~7 Days | 3,230 | ||
| GE25N100D | GE25N100D is a high voltage, fast recovery diode chip with low leakage current. | VISHAY | 3~7 Days | 3,289 | ||
| DSA300I45NA | Rectifier Diode, Schottky, 1 Phase, 1 Element, 300A, 45V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, MINIBLOC-2 | IXYS | Obsolete | 3~7 Days | 6,658 | |
| DSA300I100NA | Rectifier Diode, Schottky, 1 Phase, 1 Element, 300A, 100V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, MINIBLOC-4 | IXYS | 3~7 Days | 6,061 | ||
| IXXN110N65B4H1 | IGBT Transistors 650V/240A TRENCH IGBT GENX4 XPT | Ixys Integrated Circuits Division | ACTIVE | 3~7 Days | 5,680 | |
| UFB200FA20 | High Voltage Diode Array with 2 Independent Channels, Suitable for DC Applications | Siliconix | OBSOLETE | 3~7 Days | 9,684 | |
| UFB200FA20P | 00FA20P (844-UFB200FA20) | Siliconix | OBSOLETE | 3~7 Days | 5,364 | |
| HFA80FA120P | Rectifier Diode Switching 40A 52ns 4-Pin SOT-227 | Siliconix | 3~7 Days | 5,572 | ||
| FA57SA50LCP | High-power electronics component for demanding applications | Vishay | OBSOLETE | 3~7 Days | 9,885 | |
| APT6015JVFR | Designed for high-speed and high-power operations, the APTJVFR N-channel MOSFET offers unmatched versatilit | Microchip Technology | OBSOLETE | 3~7 Days | 8,767 | |
| UFB200FA60P | 4-Pin SOT-227 Rectifier Diode Switching 126A 108ns | Siliconix | 3~7 Days | 3,541 | ||
| HFA80FA120 | Silicon Rectifier Diode with 1 Phase, 2 Elements, 40A, SOT-227 Mounting, 4 Pins | vishay | Obsolete | 3~7 Days | 6,656 |
Additional Package/Case