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IXYN80N90C3H1
IGBT transistor IXYN80N90C3H1AH
IXYN80N90C3H1
IGBT transistor IXYN80N90C3H1AH
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Manufacturer Part # : IXYN80N90C3H1
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Package/Case: SOT-227
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Part Status : Active
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Product Categories : IGBT Modules
Quality Assurance
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Shipping & Payment
Shipping & Payment
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Service & Packaging
Service & Packaging
About After Sales Service
All Parts Extended Quality Guarantee
Initiate the application within 90 days from the shipment date.
Confirm the return or exchange with our staff.
Maintain the goods in their original condition as received.
Lastly, please note that the eligibility for return or exchange of goods is subject to an assessment of the actual condition of the returned items. We will evaluate the received goods before finalizing the return or exchange process. If you have any inquiries or require further assistance regarding returns or exchanges, please don't hesitate to contact us at [email protected]
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Regarding packaging, our products are carefully packed in anti-static bags to provide ESD anti-static protection. The outer packaging is durable with secure closure. We support various packaging methods such as Tape and Reel, Cut Tape, Tube, or Tray.
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IXYN80N90C3H1 DataSheet
Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!
Details
IXYN80N90C3H1 is a type of IGBT (Insulated Gate Bipolar Transistor) module with a maximum voltage rating of 900V, a maximum current rating of 115A, and a power dissipation of 500W. The device is housed in a SOT227B package, which is a type of surface-mount package designed to provide high thermal performance and easy installation. This IGBT module is commonly used in high power applications where efficient switching and voltage control are required. The Insulated Gate Bipolar Transistor combines the advantages of both MOSFETs and bipolar transistors, making it ideal for applications that require high current and voltage capability. The IXYS IXYN80N90C3H1 is designed for use in industrial applications such as motor control, power supplies, inverters, and renewable energy systems. Its high voltage and current ratings make it suitable for handling large amounts of power while maintaining high efficiency.
Key Features
- IXYN80N90C3H1 is a power MOSFET
- Designed for high power applications
- Capable of handling high current and voltage
- Low on-state resistance for efficient power transfer
- Fast switching speed for improved performance
- High reliability and rugged construction
- Suitable for use in various industrial and automotive applications
Application
- Power management systems
- Motor control applications
- Solar inverters
- Uninterruptible power supplies
- Electric vehicle chargers
- Industrial welding equipment
- Switched-mode power supplies
- Home appliances
- LED lighting
- Renewable energy systems
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
| Product Category ! | IGBT Modules | RoHS | Details |
| Product | IGBT Silicon Modules | Configuration | Single |
| Collector- Emitter Voltage VCEO Max | 900 V | Collector-Emitter Saturation Voltage | 2.3 V |
| Continuous Collector Current at 25 C | 115 A | Gate-Emitter Leakage Current | 100 nA |
| Pd - Power Dissipation | 500 W | Package / Case | SOT-227 |
| Minimum Operating Temperature | - 55 C | Maximum Operating Temperature ! | + 150 C |
| Brand | IXYS | Maximum Gate Emitter Voltage | 20 V |
| Mounting Style | Chassis Mount | Product Type ! | IGBT Modules |
| Series | Planar | Factory Pack Quantity | 10 |
| Subcategory | IGBTs | Technology | Si |
| Tradename | ZPT | Unit Weight | 1.058219 oz |
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
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