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IXGH30N60C3D1
ROHS TO-247AD IGBTs IXGH30N60C3D1
IXGH30N60C3D1
ROHS TO-247AD IGBTs IXGH30N60C3D1
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Manufacturer Part # : IXGH30N60C3D1
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Package/Case: TO-247AD-3
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Brand: Littelfuse
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Product Categories : Single IGBTs
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Shipping & Payment
Shipping & Payment
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Service & Packaging
Service & Packaging
About After Sales Service
All Parts Extended Quality Guarantee
Initiate the application within 90 days from the shipment date.
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IXGH30N60C3D1 DataSheet
Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!
Details
The GenX3™ IGBTs are a game-changer in the world of power electronics. With switching capabilities up to 150 kHz and currents ranging from 42A to 120A, these devices offer power designers a high value option for a wide range of switching applications. The 300V GenX3™ IGBTs are rugged and robust, comparable to the most rugged power MOSFETs on the market. For high current applications requiring soft-switching frequencies above 200 kHz and hard-switching frequencies of 40 kHz, the 600V GenX3™ IGBTs are the ideal choice. These devices utilize Punch-Through technology to provide higher surge current capabilities, lower saturation voltage, and lower energy losses for efficient performance
Key Features
- Simple drive circuit
- High frequency operation
- Optimized for low loss performance
Application
- Customized inverter designs
- Intelligent power management
- Durable welding machines
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
| Status | Active | VCES - Collector-Emitter Voltage (V) | 600 |
| Collector Current @ 25 ℃ (A) | 60 | VCE(sat) - Collector-Emitter Saturation Voltage (V) | 3 |
| Fall Time [Inductive Load] (ns) | 47 | Configuration | Copack (FRED) |
| Package Type | TO-247U | Thermal resistance [junction-case] [IGBT] (K/W) | 0.56 |
| Turn-off Energy @ 125 ℃ (mJ) | 0.33 | Collector Current @ 110 ℃ (A) | 30 |
| Thermal resistance [junction-case] [Diode] (K/W) | 0.9 | Forward Current @ 110 ℃ (A) | 30 |
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
FAQs
What is IXGH30N60C3D1?
The IXGH30N60C3D1 is a high-voltage, high-speed IGBT (Insulated Gate Bipolar Transistor) designed by IXYS Corporation. It is suitable for various power electronic applications including motor drives, inverter systems, welding equipment, and induction heating.
How Does IXGH30N60C3D1 Work?
The IXGH30N60C3D1 operates as a high-voltage switch, allowing it to control large amounts of power in electronic systems. It combines the high input impedance of a MOSFET with the low on-state conduction loss of a bipolar transistor, making it suitable for high-efficiency power conversion applications. The IGBT is turned on and off by applying appropriate gate voltage, enabling precise control of power flow.
How Many Pins does IXGH30N60C3D1 have and What are the Functions of the Pinout Configuration?
The IXGH30N60C3D1 is typically available in standard TO-247 package with 3 pins. The pinout configuration includes:
- Collector (C): High-voltage power terminal.
- Emitter (E): Power ground terminal.
- Gate (G): Control terminal for turning the IGBT on and off.
What are the Pros and Cons of IXGH30N60C3D1?
Pros:
- High Voltage Capability: Suitable for high-power applications due to its high breakdown voltage.
- High-Speed Switching: Enables efficient power control and fast switching times.
- Robustness: Designed to handle high current and high temperature operating conditions.
Cons:
- Complex Drive Circuitry: Requires precise gate drive control and protection circuitry for reliable operation.
- Switching Noise: May generate electromagnetic interference (EMI) which needs to be managed in sensitive applications.
Are There Any Equivalents/Alternatives to IXGH30N60C3D1 for Recommendation?
Similar IGBT products to the IXGH30N60C3D1 include the FGA30N60UFD from Fairchild Semiconductor and the IKW30N60T from Infineon Technologies.
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