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IXXH100N60B3
Silicon Insulated Gate Bipolar Transistor Chip with TO-247AD package
IXXH100N60B3
Silicon Insulated Gate Bipolar Transistor Chip with TO-247AD package
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Service & Packaging
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IXXH100N60B3 DataSheet
Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!
Details
Extreme Light Punch Through IGBT for 20-60 kHz SwitchingFeatures● Optimized for 20-60kHz Switching● Square RBSOA● Avalanche Capability● Short Circuit Capability● International Standard PackageAdvantages● High Power Density● 175°C Rated● Extremely Rugged● Low Gate Drive RequirementApplications● UPS● Motor Drives● SMPS● PFC Circuits● Battery Chargers● Welding Machines● Lamp Ballasts● High Frequency Power Inverters
Key Features
- Optimized for 20-60kHz Switching
- Square RBSOA
- Avalanche Capability
- Short Circuit Capability
- International Standard Package
- Advantages
- High Power Density
- 175°C Rated
- Extremely Rugged
- Low Gate Drive Requirement
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
| Product Category ! | IGBT Transistors | RoHS | Details |
| Technology | Si | Package / Case | TO-247AD |
| Mounting Style | Through Hole | Configuration | Single |
| Collector- Emitter Voltage VCEO Max | 600 V | Collector-Emitter Saturation Voltage | 1.8 V |
| Maximum Gate Emitter Voltage | - 20 V, 20 V | Continuous Collector Current at 25 C | 220 A |
| Pd - Power Dissipation | 830 W | Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature ! | + 150 C | Series | IXXH100N60 |
| Brand | IXYS | Gate-Emitter Leakage Current | 100 nA |
| Product Type ! | IGBT Transistors | Factory Pack Quantity | 30 |
| Subcategory | IGBTs | Tradename | XPT |
| Unit Weight | 0.229281 oz |
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
FAQs
What is IXXH100N60B3?
The IXXH100N60B3 is a high-power N-channel enhancement-mode insulated-gate bipolar transistor (IGBT) designed by IXYS Corporation. It is suitable for high-power switching applications in industrial motor drives, power supplies, and renewable energy systems.
How Does IXXH100N60B3 Work?
The IXXH100N60B3 operates as an IGBT with high power handling capabilities. It combines the features of a MOSFET and a bipolar transistor, offering low on-state voltage drop and high switching speed. The IGBT is used for high-voltage and high-current applications where efficient power switching is required.
How Many Pins does IXXH100N60B3 have and What are the Functions of the Pinout Configuration?
The IXXH100N60B3 is typically housed in a TO-247 package, which includes three main pins:
- Collector (C): Connects to the high-power load or circuit.
- Emitter (E): Connects to the ground or the return path of the load.
- Gate (G): Controls the switching of the IGBT by applying appropriate voltage levels.
What are the Pros and Cons of IXXH100N60B3?
Pros:
- High Power Handling Capacity: Capable of handling high currents and voltages.
- Low On-State Voltage Drop: Provides efficient power switching with minimal voltage losses.
- Fast Switching Speed: Suitable for applications requiring rapid switching operations.
- Robust and Reliable: Designed for industrial applications with high reliability requirements.
- Wide Range of Applications: Can be used in various high-power systems and motor control applications.
Cons:
- Complex Drive Circuitry: May require sophisticated driver circuits for optimal performance.
- Heat Dissipation: High-power IGBTs generate heat and require proper thermal management.
- Cost: High-power IGBTs can be more expensive than lower-power alternatives.
Are There Any Equivalents/Alternatives to IXXH100N60B3 for Recommendation?
- Equivalents to the IXXH100N60B3 include the IRG4PH50UD from Infineon Technologies and the FGA60N60 from Fairchild Semiconductor.
- Alternatives to the IXXH100N60B3 are the IXGH60N60C2D1 from IXYS Corporation and the FGH60N60SMD from Fairchild Semiconductor.
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