SOT-227-4 Related Product
Part Number | Description | Brand | Lifecycle Status | Cargo cycle | In Stock | Operation |
---|---|---|---|---|---|---|
IXFN210N20P | Product IXFN210N20P is a Power Field-Effect Transistor with a current rating of 188A, a voltage capability of 200V, and a low on-resistance of 0 | Littelfuse | Active | 3~7 Days | 3,509 | |
IXFN80N50P | N-channel MOSFET capable of handling up to 500 volts and 66 amperes | Littelfuse | 3~7 Days | 5,068 | ||
IXFN180N20 | The IXFN180N20 is a high-power N-channel MOSFET designed for applications up to 200 volts and 180 amps, enclosed in a 4-pin SOT-227B package | Littelfuse | 3~7 Days | 5,693 | ||
IXFN50N80Q2 | MINIBLOC-4 with 0.15ohm resistance | Ixys | 3~7 Days | 3,813 | ||
APT2X101DQ100J | 1000V Ultrafast Soft Recovery Rectifier Diode | Microchip | Active | 3~7 Days | 3,394 | |
APT2X100DQ120J | Rectifiers FRED DQ 1200 V 100 A Dual Anti-Parallel SOT-227 | Microchip | Active | 3~7 Days | 6,068 | |
FB180SA10 | Single N-Channel HEXFET Power MOSFET Module | IR | Discontinued | 3~7 Days | 7,551 | |
IXTN21N100 | Modules with 21 Amps and 100V, designed as discrete semiconductor components with a resistance of 0.55 Ohm | Ixys | Obsolete | 3~7 Days | 5,793 | |
APT50M50JVFR | Packaged in rail/tube | Microchip | Active | 3~7 Days | 9,511 | |
APT8015JVFR | APT8015JVFR Module featuring a high-voltage single transistor design | Microchip | Active | 3~7 Days | 5,680 | |
APT12040JVR | APT12040JVR is a MOSFET featuring a voltage rating of 1 | Microchip | Active | 3~7 Days | 8,519 | |
IXFN50N50 | 50 Amps capacity Discrete Semiconductor Modules capable of handling up to 500V with a 0.1 Ohm Rds | Ixys | NRND | 3~7 Days | 9,244 | |
MSC040SMA120J | Featuring a 1.2KV voltage threshold and 53A current capacity, the MSC040SMA120J is a SiC N-channel MOSFET enclosed in a 4-pin SOT-227 tube package." | Microchip Technology | 3~7 Days | 4,316 | ||
MSC025SMA120J | Power Field-Effect Transistor with a current rating of 77A and a voltage rating of 1200V, featuring a low on-resistance of 0 | Microchip Technology | 3~7 Days | 7,687 | ||
IXFN120N65X2 | Product Description: IXFN120N65X2 - MOSFET, N-Type, 650 Volts, 108 Amperes | IXYS | 3~7 Days | 7,011 | ||
IXTN170P10P | P-channel MOSFET transistor rated for 100 volts and 170 amperes with 4 pins in an SOT-227B package | IXYS | Active | 3~7 Days | 7,544 | |
IXTN60N50L2 | 500V 53A N-Channel Chassis Mount Transistor in SOT-227B Housing | IXYS | Active | 3~7 Days | 3,272 | |
IXFN230N20T | The SOT-227B-packaged MOSFET, designated as IXFN230N20T, adheres to ROHS requirements | Littelfuse | 3~7 Days | 3,528 | ||
IXFN44N50 | The IXFN44N50 product consists of discrete semiconductor modules suitable for applications requiring 500 volts and a current capacity of 44 amperes | Littelfuse | NRND | 3~7 Days | 3,599 | |
IXFN26N90 | SOT-227B MOSFETs ROHS IXFN26N90 | Littelfuse | NRND | 3~7 Days | 3,670 | |
IXFN60N60 | 600V 60A Discrete Semiconductor Modules | Littelfuse | NRND | 3~7 Days | 4,355 | |
APT2X61D100J | Rectifying Device - High-Speed Recovery/FRED | Microchip | Active | 3~7 Days | 7,736 | |
APT2X61DC120J | SiC-Based Power Rectifier Module | MICROSEMI | Active | 3~7 Days | 4,085 | |
IXFN50N120SK | RoHS compliant IXYS MOSFET | IXYS | 3~7 Days | 4,503 | ||
IXFN48N50 | Product IXFN48N50 is a high-performance N-channel MOSFET | Littelfuse | 3~7 Days | 500 | ||
IXTN30N100L | 0A 1KV N-Channel Trans MOSFET SOT-227B | Ixys | Active | 3~7 Days | 5,108 | |
IXFN300N20X3 | MOSFET N-channel 200 volts, 300 amperes, SOT227B package | IXYS | Active | 3~7 Days | 6,444 | |
IXFN21N100Q | The specifications of product IXFN21N100Q include 21 Amps and a voltage rating of 1000V, with a low Rds of 0.5 | Littelfuse | 3~7 Days | 7,562 | ||
IXFN44N60 | Power Field-Effect Transistor with a 44A Drain Current and 600V Voltage Rating, featuring 0 | Littelfuse | ACTIVE | 3~7 Days | 7,418 | |
IXFN80N50 | SOT-227B IXFN80N50 MOSFETs ROHS | Littelfuse | 3~7 Days | 4,824 | ||
IXFN360N10T | IXFN360N10T: MOSFET, N-channel, rated for 100 volts with a current handling capability of 360 amps | Littelfuse | ACTIVE | 3~7 Days | 5,218 | |
APT2X61DQ100J | 4-Pin SOT-227 Diode Switching 1KV 60A | Microchip | 3~7 Days | 4,035 | ||
APT2X101D100J | Ultrafast rectifier diode with 1000V rating for efficient energy conversion | Microchip | ACTIVE | 3~7 Days | 9,011 | |
APT10M07JVR | APT10M07JVR from Microchip Technology | Microchip | OBSOLETE | 3~7 Days | 7,793 | |
APT50M85JVR | APT50M85JVR is a discrete semiconductor module utilizing MOSFET MOS5 technology | Microchip Technology | Active | 3~7 Days | 6,178 | |
GA200SA60S | Dual 24TSSOP IC FET Bus Switch | Vishay | OBSOLETE | 3~7 Days | 8,772 | |
APT60GT60JRD | High-Power IGBT Module for Industrial Applications ( character | Microchip | OBSOLETE | 3~7 Days | 6,581 | |
IXTN210P10T | Transistor P-type with 100V voltage, 210A current, and 4-pin SOT-227B package | Littelfuse | ACTIVE | 3~7 Days | 6,739 | |
IXFN120N20 | performance IXFN120N20 technology | Littelfuse | NRND | 3~7 Days | 9,832 | |
IXFN48N50Q | 48 Amps Discrete Semiconductor Modules capable of handling 500V with a 0.1 Rds | Littelfuse | ACTIVE | 3~7 Days | 7,035 |
Additional Package/Case