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IXFN50N80Q2
MINIBLOC-4 with 0.15ohm resistanceIXFN50N80Q2
MINIBLOC-4 with 0.15ohm resistance
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Service & Packaging
Service & Packaging
About After Sales Service
All Parts Extended Quality Guarantee
Initiate the application within 90 days from the shipment date.
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IXFN50N80Q2 DataSheet
Pricing (USD)
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | $34.522 | $34.52 |
| 30 | $33.326 | $999.78 |
These prices are subject to market fluctuations, and a quote submission is required to obtain the latest prices.
Details
Incorporating advanced silicon technology, the IXFN50N80Q2 MOSFET likely features low on-resistance and fast switching speeds, characteristics that are essential for maximizing efficiency and minimizing power losses in high-power applications. These technological advancements ensure optimal performance and reliability, making it a preferred choice among engineers and designers looking for top-notch semiconductor solutions
Key Features
- The IXFN50N80Q2 features fast switching characteristics and low on-state resistance
- This transistor is designed for high-power applications requiring efficient switching performance
- Suitable for use in power supplies, motor control and other high-frequency applications
Application
- Maximizes power management
- Ensures efficient power control
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
| Product Category ! | Discrete Semiconductor Modules | RoHS | Details |
| Product | Power MOSFET Modules | Technology | Si |
| Vgs - Gate-Source Voltage | - 30 V, + 30 V | Mounting Style | Chassis Mount |
| Package / Case | SOT-227-4 | Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature ! | + 150 C | Brand | IXYS |
| Configuration | Single | Fall Time | 13 ns |
| Height | 9.6 mm | Id - Continuous Drain Current | 50 A |
| Length | 38.23 mm | Number of Channels | 1 Channel |
| Pd - Power Dissipation | 1.135 kW | Product Type ! | Discrete Semiconductor Modules |
| Rds On - Drain-Source Resistance | 150 mOhms | Rise Time ! | 25 ns |
| Factory Pack Quantity | 10 | Subcategory | Discrete Semiconductor Modules |
| Tradename | HiPerFET | Transistor Polarity | N-Channel |
| Typical Turn-Off Delay Time | 60 ns | Typical Turn-On Delay Time | 26 ns |
| Vds - Drain-Source Breakdown Voltage | 800 V | Width | 25.42 mm |
| Unit Weight | 1.058219 oz |
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
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