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SOT-23 Related Product
| Part Number | Description | Brand | Lifecycle Status | Cargo cycle | In Stock | Operation |
|---|---|---|---|---|---|---|
| SST4416 | RF Small Signal Field-Effect Transistor | VISHAY | 3~7 Days | 5,009 | ||
| SSTPAD100 | Diode Rectifier featuring 2 elements and a 35V V(RRM) | VISHAY SILICONIX | 3~7 Days | 3,212 | ||
| SST4391 | Designed for high-voltage power management and efficient energy transfe | VISHAY SILICONIX | 3~7 Days | 3,122 | ||
| SST4119 | Silicon Junction FET N-Channel Small Signal Field-Effect Transistor in Plastic Package | VISHAY SILICONIX | 3~7 Days | 5,004 | ||
| SSTA06T116 | 80 V, 500 mA NPN small signal transistor constructed with silicon technology | ROHM | 3~7 Days | 3,488 | ||
| SSTJ212 | SSTJ212, characterized as an RF Small Signal Field-Effect Transistor, operates within the Ultra High Frequency Band | Siliconix | 3~7 Days | 5,817 | ||
| SSTPAD5 | Rectifier Diode with 1 Element, 0.01A, 35V Reverse Voltage, Silicon Material, SOT-23 Package, 3 Pins | VISHAY SILICONIX | 3~7 Days | 5,438 | ||
| SST309 | 3 PIN Configuration | VISHAY SILICONIX | 3~7 Days | 3,799 | ||
| SMP1307-004LF | This product, SMP1307-004LF, is a pin diode made from silicon material, with a voltage breakdown threshold of 200V and packaged in green plastic | SKYWORKS | 3~7 Days | 7,322 | ||
| SST308 | TO-236 Packaged N-Channel Silicon Junction FET | VISHAY SILICONIX | 3~7 Days | 4,133 | ||
| SQ2308ES-T1-GE3 | 60V TO-236 N-channel MOSFET with dual-source configuration | VISHAY | OBSOLETE | 3~7 Days | 3,646 | |
| SST176 | Channel Small Signal Field-Effect Transistor Junction FET | VISHAY SILICONIX | 3~7 Days | 7,684 | ||
| SST177 | Small Signal JFET with P-Channel Configuration | VISHAY SILICONIX | 3~7 Days | 6,530 | ||
| SST215 | This is SST215, a small-signal N-Channel MOSFET with a maximum drain current of 0 | VISHAY | 3~7 Days | 7,314 | ||
| SST270 | SST270, P-Channel JFET Transistor with 3 Pins in SOT-23 Package | VISHAY SILICONIX | 3~7 Days | 6,639 | ||
| SST108 | 80mA N-Channel FETs Rated for a Voltage of 32V | VISHAY | 3~7 Days | 4,228 | ||
| SL12.TCT | TVS SOT23 with 300W power and low capacitance | SEMTECH | ACTIVE | 3~7 Days | 5,429 | |
| SST4393 | Product SST4393 | VISHAY SILICONIX | 3~7 Days | 4,149 | ||
| SDM40E20LA-7 | 20V Schottky diodes and rectifiers with a current handling capability of 0.4A | DIODES | Active | 3~7 Days | 6,623 | |
| SI2301BDS-T1 | Alternative choice for SI2301BDS-T1: MOSFET SI2301CDS-T1-GE3 | VISHAY | Discontinued | 3~7 Days | 4,506 | |
| SBR160S23-7 | Super Barrier Rectifier Diode 60V 1.6A SOT-23 T/R | DIODES | Active | 3~7 Days | 7,472 | |
| S-1206B18-M3T1G | Tape and Reel Packaging | SEIKO | 3~7 Days | 7,991 | ||
| S-1132B33-M5T1G | Fixed LDO Regulator | SEIKO | 3~7 Days | 7,460 | ||
| KST2907A | PNP Epitaxial Silicon Transistor KST2907A | KEC | Discontinued | 3~7 Days | 6,496 | |
| RSR020N06TL | Description: RSR020N06TL MOSFETs featuring SOT-346T-3 packaging, compliant with RoHS regulations | ROHM | 3~7 Days | 3,557 | ||
| RN1307 | Bipolar Transistors pre-adjusted | TOSHIBA | 3~7 Days | 7,458 | ||
| RK7002BT116 | Silicon N-Type MOSFET Transistor, 60 Volts, 0.25 Amperes, Tape/Reel | ROHM | NRND | 3~7 Days | 6,602 | |
| BZX84B15 | Zener Diode, 15V V(Z), 2%, 0.35W, Silicon, Unidirectional, | VISHAY | 3~7 Days | 5,593 | ||
| PMV56XN,215 | 20V 3.76A N-Channel SOT-23 MOSFET Transistor | NXP | Active | 3~7 Days | 7,451 | |
| PESD3V3S2UT | TVS diode in SOT-23 package from Nexperia | NXP | 3~7 Days | 6,620 | ||
| PESD24VL2BT,215 | ESD suppressors TVS diodes PESD24VL2BT SOT23 TO-236AB | NEXPERIA | NRND | 3~7 Days | 5,232 | |
| NTR4101PT1 | -3.2A P-Channel MOSFET with a voltage tolerance of -20V | Onsemi | 3~7 Days | 6,592 | ||
| OPA343NA | The OPA343NA is a CMOS operational amplifier with a maximum offset of 8000 microvolts, offering a single functional capability and packaged in PDSO5 | Texas Instruments | 3~7 Days | 3,659 | ||
| PBSS4041NT | PBSS4041NT: A cutting-edge Bipolar Junction Transistor (BJT) designed for high-performance applications | NXP | Active | 3~7 Days | 5,457 | |
| NJM2575F1 | Package Size: PDSO6 | JRC | 3~7 Days | 4,666 | ||
| MAX8880EUT-T | This electronic component, MAX8880EUT+T, is designed to meet the demands of modern technology with its innovative design and superior performance | MAXIM | 3~7 Days | 7,584 | ||
| NC7SZ00M5 | The NC7SZ00M5 is a 5-pin SOT-23 package 2-input NAND gate from the LVC/LCX/Z series | Onsemi | 3~7 Days | 7,692 | ||
| NC7S86M5 | This product, the NC7S86M5, is a 2-input XOR gate designed for use in CMOS circuits, part of the HC/UH series, and housed in a PDSO5 package | Onsemi | 3~7 Days | 5,583 | ||
| NC7S00M5 | Electronic component used for signal processing in electronic devices | Onsemi | 3~7 Days | 6,997 | ||
| MMBD1501 | MMBD1501 Overview: Designed as a diode for small-signal switching needs, this component supports voltages up to 200V and currents up to 0 | Onsemi | Active | 3~7 Days | 7,596 |
Additional Package/Case