SSTJ212
SSTJ212, characterized as an RF Small Signal Field-Effect Transistor, operates within the Ultra High Frequency BandSSTJ212
SSTJ212, characterized as an RF Small Signal Field-Effect Transistor, operates within the Ultra High Frequency Band
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Shipping & Payment
Shipping & Payment
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Service & Packaging
Service & Packaging
About After Sales Service
All Parts Extended Quality Guarantee
Initiate the application within 90 days from the shipment date.
Confirm the return or exchange with our staff.
Maintain the goods in their original condition as received.
Lastly, please note that the eligibility for return or exchange of goods is subject to an assessment of the actual condition of the returned items. We will evaluate the received goods before finalizing the return or exchange process. If you have any inquiries or require further assistance regarding returns or exchanges, please don't hesitate to contact us at [email protected]
About packaging
Regarding packaging, our products are carefully packed in anti-static bags to provide ESD anti-static protection. The outer packaging is durable with secure closure. We support various packaging methods such as Tape and Reel, Cut Tape, Tube, or Tray.
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SSTJ212 DataSheet
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Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!
Details
SSTJ212 is a silicon NPN epitaxial planar transistor primarily used for general-purpose switching and amplification purposes in electronic circuits. It is housed in a TO-92 package and can handle currents up to 100mA and voltages up to 25V. The transistor has a collector-base voltage of 30V, a collector-emitter voltage of 25V, and an emitter-base voltage of 5V. It has a maximum power dissipation of 450mW, a DC current gain (hFE) of 40 to 130 at 5mA and 10V, and a transition frequency (fT) of 100MHz. SSTJ212 is characterized by its low noise, high current gain, and high transition frequency, making it suitable for use in a wide range of electronic applications such as amplifiers, oscillators, mixers, and low-power switching circuits. It is widely used in consumer electronics, automotive systems, industrial automation, and telecommunications equipment.
Key Features
- Single-channel silicon NPN transistor
- Maximum collector current of 0.1A
- Maximum collector-emitter voltage of 25V
- DC current gain of 100 to 300
- Low saturation voltage
- Small signal switching transistor
- Multiple package options available
Application
- Automotive industry for engine control systems
- Industrial automation for motion control
- Consumer electronics for power management
- Medical equipment for monitoring and control
- Robotics for motor control
- Smart grid for energy management
- Renewable energy for power conversion
- Aerospace industry for avionics systems
- Communication systems for signal processing
- Military applications for radar and communication systems
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Category ! | JFET | RoHS | N |
Technology | Si | Mounting Style | SMD/SMT |
Package / Case | SOT-23 (TO-236) | Transistor Polarity | N-Channel |
Configuration | Single | Vgs - Gate-Source Breakdown Voltage | - 25 V |
Minimum Operating Temperature | - 55 C | Maximum Operating Temperature ! | + 150 C |
Brand | Vishay / Siliconix | Forward Transconductance - Min | 0.006 S |
Operating Temperature Range ! | - 55 C to + 150 C | Product Type ! | JFETs |
Factory Pack Quantity | 1000 | Subcategory | Transistors |
Type | JFET | Unit Weight | 0.000282 oz |
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
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