SISS65DN-T1-GE3
Trans MOSFET P-CH 30V 25.9A 8-Pin PowerPAK 1212 EP T/RSISS65DN-T1-GE3
Trans MOSFET P-CH 30V 25.9A 8-Pin PowerPAK 1212 EP T/R
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Manufacturer Part # : SISS65DN-T1-GE3
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Package/Case: POWERPAK-8
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Brand: Siliconix
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Product Categories : Single FETs, MOSFETs
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Service & Packaging
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SISS65DN-T1-GE3 DataSheet
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Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!
Details
The SISS65DN-T1-GE3 is a P-Channel MOSFET from Vishay Siliconix. This device is part of the TrenchFET Gen III series and features a PowerPAK 1212-8S package. With a drain to source voltage of up to 30V, it is suitable for various applications where high power switching is required. The P-channel MOSFET is designed to provide fast switching times, low leakage current, and high reliability in harsh environments. Its surface mount packaging makes it ideal for use in modern electronic devices such as power supplies, motor controls, and automotive systems.
Key Features
- P-Channel 30 V (D-S) MOSFET
- TrenchFET Gen III technology
- PowerPAK 1212-8S package
- Drain to source voltage of up to 30V
- Current - Continuous Drain: 25.9A (Ta), 94A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
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Application
- Power supplies
- Motor controls
- Automotive systems
- Renewable energy applications
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Category ! | MOSFET | RoHS | Details |
REACH | Details | Technology | Si |
Mounting Style | SMD/SMT | Package / Case | PowerPAK-1212-8S-8 |
Transistor Polarity | P-Channel | Number of Channels | 1 Channel |
Vds - Drain-Source Breakdown Voltage | 30 V | Id - Continuous Drain Current | 94 A |
Rds On - Drain-Source Resistance | 4.6 mOhms | Vgs - Gate-Source Voltage | - 20 V, + 20 V |
Vgs th - Gate-Source Threshold Voltage | 2.3 V | Qg - Gate Charge | 138 nC |
Minimum Operating Temperature | - 55 C | Maximum Operating Temperature ! | + 150 C |
Pd - Power Dissipation | 65.8 W | Channel Mode | Enhancement |
Tradename | TrenchFET, PowerPAK | Series | SIS |
Brand | Vishay Semiconductors | Configuration | Single |
Fall Time | 18 ns | Forward Transconductance - Min | 62 S |
Product Type ! | MOSFET | Rise Time ! | 25 ns |
Factory Pack Quantity | 3000 | Subcategory | MOSFETs |
Typical Turn-Off Delay Time | 45 ns | Typical Turn-On Delay Time | 20 ns |
Unit Weight | 0.017231 oz |
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
FAQs
What is SISS65DN-T1-GE3?
The SISS65DN-T1-GE3 is a dual N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed by Vishay Siliconix. It is suitable for power management applications, such as DC-DC converters, motor control, and load switching circuits.
How Does SISS65DN-T1-GE3 Work?
The SISS65DN-T1-GE3 operates as a dual N-channel MOSFET, allowing it to control current flow between the source and drain terminals. It is commonly used to switch high currents with low ON resistance and fast switching speeds. The MOSFET is driven by voltage applied to the gate terminal to control the conductivity between the source and drain.
How Many Pins does SISS65DN-T1-GE3 have and What are the Functions of the Pinout Configuration?
The SISS65DN-T1-GE3 is housed in a 6-pin PowerPAK SO-8 package. The pinout configuration includes:
- GATE1, GATE2: Gate terminals for each N-channel MOSFET.
- SOURCE1, SOURCE2: Source terminals for each MOSFET.
- DRAIN1, DRAIN2: Drain terminals for each MOSFET.
What are the Pros and Cons of SISS65DN-T1-GE3?
Pros:
- High Current Handling: Capable of switching high currents for power management applications.
- Low ON Resistance: Provides efficient current conduction with minimal voltage drop.
- Fast Switching Speeds: Enables rapid switching transitions for dynamic control.
- Dual MOSFET Design: Allows independent control of two channels with a single component.
- Robust Package: The PowerPAK SO-8 package offers good thermal performance and mechanical durability.
Cons:
- Gate Drive Voltage: Requires proper gate voltage levels for efficient switching performance.
- Heat Dissipation: May require additional thermal management in high-power applications.
- Complexity: Dual-channel MOSFETs may add complexity in circuit design compared to single-channel alternatives.
Are There Any Equivalents/Alternatives to SISS65DN-T1-GE3 for Recommendation?
- The IRF7205 from Infineon Technologies is a similar dual N-channel MOSFET offering.
- Alternative options to the SISS65DN-T1-GE3 include the NDP6020P from ON Semiconductor and the FDS8958A from Fairchild Semiconductor.
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